• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.3
• /
• pp.72-78
• /
• 1992

The Silicon vertical Hall devices are fabricated using standard bipolar process and characterized in terms of the Hall voltage, sensitivities, and offset voltage. The Hall voltage and sensitivity of the devices showed good linearity with respect to the magnetic flux density and reverse supply voltage Vr. The sensitivity of device with P$^{+}$ isolation dam has been increased up to 1.2 times compared to that of device without the dam. With the condition of V$_{r}$=-5.0[V], B=0.4[T] and I$_{sup}$=1.0[mA], the Hall voltage and sensitivity of the device with P$^{+}$ isolation dam were about 29[mV] and 74[V/AT], respectively. These vertical Hall devices can be used as the adjustable magnetic fields sensor.

• Journal of Sensor Science and Technology
• /
• v.23 no.6
• /
• pp.392-396
• /
• 2014

The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$ interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without $p^+$ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former's 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• Journal of Sensor Science and Technology
• /
• v.20 no.4
• /
• pp.260-265
• /
• 2011

The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• Journal of electromagnetic engineering and science
• /
• v.18 no.1
• /
• pp.35-40
• /
• 2018

This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnetic field in various types of sensors or communication devices. To improve sensitivity, trenches are implanted next to the current input terminal, so that the Hall current becomes maximum. The effect of the dimension and location of trenches on sensitivity is simulated in the COMSOL simulator. A vertical-type Hall device with a width of $16{\mu}m$ and a height of $2{\mu}m$ is optimized for maximum sensitivity. The simulation result shows that it has a 23% better result than a conventional vertical-type CMOS Hall device without a trench.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.12 no.10
• /
• pp.1890-1896
• /
• 2008

In this paper, the Si vertical Hall devices ale fabricated by using standard bipolar process and investigated in terms of the opeating and noise properties. The sensitivity of device with P+ isolation dam(type B) has been increased up to about 1.2 times compared to that device without the dam also noise has been increased. With the condition of f=I[KHz], band-width 1[Hz], the resolution of magnetic-field detection were about $0.97[{\mu}T]$/ type B and $1.25[{\mu}T]$/ type A, respectively, thus we must consider correlation the low noise or good resolution and high sensitivity in the situation for device geometry design or even for the materials.

• Nuclear Engineering and Technology
• /
• v.48 no.5
• /
• pp.1237-1251
• /
• 2016

Although the horizontal component of an earthquake response can be significantly reduced through the use of conventional seismic isolators, the vertical component of excitation is still transmitted directly into the structure. Records from instrumented structures, and some recent tests and analyses have actually seen increases in vertical responses in base isolated structures under the combined effects of horizontal and vertical ground motions. This issue becomes a great concern to facilities such as a Nuclear Power Plants (NPP), with specialized equipment and machinery that is not only expensive, but critical to safe operation. As such, there is considerable interest worldwide in vertical and three-dimensional (3D) isolation systems. This paper examines several vertical and 3D isolation systems that have been proposed and their potential application to modern nuclear facilities. In particular, a series of case study analyses of a modern NPP model are performed to examine the benefits and challenges associated with 3D isolation compared with horizontal isolation. It was found that compared with the general horizontal isolators, isolators that have vertical frequencies of no more than 3 Hz can effectively reduce the vertical in-structure responses for the studied NPP model. Among the studied cases, the case that has a vertical isolation frequency of 3 Hz is the one that can keep the horizontal period of the isolators as the first period while having the most flexible vertical isolator properties. When the vertical frequency of isolators reduces to 1 Hz, the rocking effect is obvious and rocking restraining devices are necessary.