• Title/Summary/Keyword: velocity information

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Quantitative analysis of oculomotor system by automatic identification algorithm (자동판별 알고리즘에 의한 동안계의 정량적인 해석)

  • 장인호;이세현;박상희
    • 제어로봇시스템학회:학술대회논문집
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    • 1986.10a
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    • pp.637-640
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    • 1986
  • The design and use of a micro-computer-based system for quantitative study of ocular kinetics are described. An algorithm for microcomputer analysis of electro-oculographically recorded saccadic eye movement is presented. From a brief, 4-min recording session detailed statistical information about saccade amplitude, duration, and velocity can be obtained. Since this data is not significantly altered by practice of motivational factors, it provides a sensitive functional test of the oculomotor system and its brain control system.

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Route Stability of Mobile Ad Hoc Network Based on Proximity and Mobility (근접성과 이동성에 기초한 Ad Hoc망의 경로안정도)

  • 안성범;안홍영
    • Proceedings of the IEEK Conference
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    • 2003.07a
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    • pp.39-42
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    • 2003
  • Due to the highly dynamic topology and absence of any fixed infrastructure, stability of selected path in Ad Hoc Networks is of prime importance. The frequent route failure and high control overhead in routing protocol consumes system resources and lead to degraded system performance. In this paper we present route stability metrics reflectting relative position and velocity of nodes, which help determine a stable route.

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Signal Processing Algorithm of FMCW RADAR using DSP (DSP를 이용한 FMCW 레이다 신호처리 알고리즘)

  • 한성칠;박상진;강성민;구경헌
    • Proceedings of the IEEK Conference
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    • 2001.06a
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    • pp.425-428
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    • 2001
  • In this paper, FMCW radar signal processing technique for the vehicle detection system are studied. And FMCW radar sensor is used as a equipment for vehicle detection. To test the performance of developed algorithm, the evaluation of the algorithm is done by simulation for signal processing technique of vehicle detection system. RADAR signal of a driving vehicle is generated by using the Matlab. Distance and velocity of vehicles are calculated with developed a1gorithm. Also the signal processing procedure is done for the virtual data with FM-AM converted noise.

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Fermi Velocity Renormalization in Graphene

  • Hwang, Choongyu;Siegel, David A.;Lanzara, Alessandra
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.163.1-163.1
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    • 2014
  • Electron-electron interactions bear important information on fundamental electronic properties such as electron effective mass, conductivity, and charge mobility. By using angle-resolved photoemission spectroscopy, here we address unusual electron self-energy in graphene induced by the electron-electron interactions, which are distinguished from those of an ordinary Fermi liquid. Our findings provide a new route for two-dimensional electron systems toward device applications.

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Computation of Boundary Layer over Declined Flat Plates Using EDISON_CFD (EDISON_CFD를 이용한 경사진 평판에서의 경계층 계산)

  • Son, Mi-So;Park, Su-Hyeong
    • Proceeding of EDISON Challenge
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    • 2012.04a
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    • pp.93-96
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    • 2012
  • 경계층이란 유체와 물체 표면의 마찰로 인해 생성되는 층을 말한다. 경계층은 두께에 따라 층류 경계층, 천이 경계층, 난류 경계층으로 나누어진다. 레이놀즈 수 크기에 따라 경계층은 몇 가지의 층으로 구분되어 진다. 이 계산에서는 경사진 평판 위에서 유동의 현상들이 어떻게 일어나는지 확인하였다. 또한, 경사가 없는 평판위에서 velocity profile과 Blasius solution을 비교하였고, 평판의 뒤쪽에 격자의 간격이 넓음으로 큰 오차가 발생하게 됨을 알 수 있었다.

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Muscle Fatigue Monitoring Using Adaptive Digital Filter (적응 디지철 필터를 이용한 근육 피로도의 측정)

  • 최영환;변윤식;김철주;김성환
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.9
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    • pp.1074-1080
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    • 1988
  • A new approach to the measurement of muscle fatigue by adaptive digital filtering algorithm is proposed. Unlike previously reported methods, it can estimate the muscle fatigue at every sample as the EMG signal statistics change. As a result, the muscle conduction velocity ranged between 4.2-5m/s at low tension and 3-4m/s at fatigue state.

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A Model of GaAs MESFET with Channel Length Modulation (채널길이 변화를 이용한 GaAs MESFET의 모델)

  • 임재완;윤현로;이기준
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.4
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    • pp.547-554
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    • 1990
  • Considering channel length modulation, we proposed a GaAs MESFET model for circuit simulator. In existing M.S. Shur's model, two different models are used according to pinch-off voltage of devices. One model for both type of devices was proposed. In this model we introduced weighted switching function(WSF) based on channel length modulation. This proposed model showed better accuracy comparing with existing single law model and complete velocity saturation model.

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Molecular dynamics simulation of ultra-low energy ion implantation for GSI device technology development (GSI소자 개발을 위한 극 저 에너지 이온 주입에 대한 분자 역학 시뮬레이션)

  • 강정원;손명식;황호정
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.3
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    • pp.18-27
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    • 1998
  • Molecular dynamicsinvestigations of ion implantation considering point defect generation were performed with ion energies in the range of ~1keV, Simulation starts perfect diamond cubic lattice site. Stillinger-Weber potential and ZBL potential were used to calculate forces between atoms. We have simulated slowing-down of ion velocity, ion trajectory and coupled-coing between ion and silicon. We also discussed distribution of point defect using rdial distribution function. We found that interstitial produced by ion bombardment mainly formed interstitial cluster.

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Simulation of Submicron MOSFET Using Hydrodynamic Model (Hydrodynamic model을 이용한 Submicron MOSFET의 Simulation)

  • 김충원;한백형;김경석
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.11
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    • pp.122-131
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    • 1993
  • In this paper, we have developed a submicron Si MOSFET simulator, which is physically based on the hydrodynamic energy transport mode. The simulator was used to investigate the nonstationary transport effects and the transient phenomena in submicron Si MOSFET's. It is found that the velocity overshoot and the carrier heating are dominant transport mechanism near the drain end of the channel and the transient phenomena is more retained in a long channel MOSFET.

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