• Journal of the Korean Society for Precision Engineering
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• v.31 no.6
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• pp.483-489
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• 2014

In this study, experiments were conducted for micro pattern printing to combine solution atomization process and stencil printing based on electrospray deposition. The stencil mask fabricated by etching the photosensitive glass placed below 0.3 mm distance to substrate has 100 um line width. The process parameters of electrospray deposition system for the atomization of the solution are applied voltage and supply flow rate of the solution. Meniscus angle of cone-jet was optimized by varying the supply flow rate from 0.3 ml/hr to 0.7 ml/hr. Voltage condition was verified having symmetric cone-jet angle and no pulsation at 8.5 kV applied voltage. In addition, a number of micro patterns are printed using a single 1 step process by solution atomization process. Variable line width of approximate 100 um was confirmed by changing conditions of solution atomization regardless of the pattern size of stencil mask.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.871-877
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• 1998

$CuInSe_2$ thin films have been formed by two-step method in which Cu-In alloy layer was first deposited and then it was selenized. Cu-In alloy layers were deposited by co-sputtering method at ambient tem-perature. XRD analysis showed that both of $Cu_{11}In_{9}$ and CuIn$_2$ phases were formed from these films. $Cu_{11}In_{9}$ peak intensity was increased increased with varying the composition from In-rich to Cu-rich. The metallic layers were selenized either in low pressure of 10 mTorr or in atmospheric pressure(AP) Less compounds of Cu-Se and In-Se were observed during the early stage of selenization and also $CuInSe_2$ thin films selenized in vacuum showed lower roughness larger grain size and better crystallinity than those in AP.

• Journal of Korea Foundry Society
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• v.39 no.1
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• pp.7-13
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• 2019

Few studies of large blooms over 700 mm thick among those used for the forging of raw materials have been reported. The cooling rate difference between the surface and the center of a large bloom is large, and the degradation of the mechanical properties is likely in cases involving excessively coarse precipitates resulted from the slow cooling rate of a large bloom after casting. Therefore, a schematic investigation of the growth behaviors of precipitates while varying their locations in blooms is necessary. The dissolution behaviors of precipitates were investigated by simulating a reheating process during which the bloom is heated to a high temperature. The segregation behavior of the as-cast large bloom was also investigated. Reheating specimens were obtained after an isothermal heat treatment at $1150^{\circ}C$ with various holding times to simulate the reheating process, with the samples undergoing a subsequent water quenching step. The precipitates were extracted using an electrolytic extractor and a particle size analysis was conducted with the aid of SEM, EDS, and TEM. In the present work, Al oxide, MnS and Nb carbide were mainly observed.

• The Bulletin of The Korean Astronomical Society
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• v.45 no.1
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• pp.59.2-59.2
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• 2020

Disks around protostars are the birthplace of planets. The first step toward planet formation is grain growth from ㎛-sized grains to mm/cm-sized grains in a disk, particularly in dense regions. In order to study whether grains grow and segregate at the protostellar stage, we investigate the ALMA Band 3 (3.1 mm) and 7 (0.87 mm) dust continuum observations of the protostellar disk WL 17 in ρ Ophiuchus L1688 cloud. As reported in a previous study, the Band 3 image shows substructures: a narrow ring and a large central hole. On the other hand, the Band 7 image shows different substructures: a non-axisymmetric ring and an off-center hole. The two-band observations provide a mean spectral index of 2.3, which suggests the presence of mm/cm-sized large grains. Its non-axisymmetric distribution may imply dust segregation between small and large grains. We perform radiative transfer modeling to examine the size and spatial distributions of dust grains in the WL 17 disk. The best-fit model suggests that large grains (>1 cm) exist in the disk, settling down toward the midplane, whereas small grains (~10 ㎛) well mixed with gas are distributed off-center and non-axisymmetrically in a thick layer. The low spectral index and the modeling results suggest that grains rapidly grow at the protostellar stage and that grains differently distribute depending on sizes, resulting in substructures varying with observed wavelengths. To understand the differential grain distributions and substructures, we discuss the effects of the protoplanet(s) expected inside the large hole and the possibility of gravitational instability.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

• Geophysics and Geophysical Exploration
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• v.10 no.3
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• pp.191-202
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• 2007

To identify the detailed attenuation structure in the southern Korean Peninsula, a numerical test was conducted for the Q tomography inversion to be applied to the accumulated dataset until 2005. In particular, the stochastic pointsource ground-motion model (STGM model; Boore, 2003) was adopted for the 2D Q tomography inversion for direct application to simulating the strong ground-motion. Simultaneous inversion of the STGM model parameters with a regional single Q model was performed to evaluate the source and site effects which were necessary to generate an artificial dataset for the numerical test. The artificial dataset consists of simulated Fourier spectra that resemble the real data in the magnitude-distance-frequency-error distribution except replacement of the regional single Q model with a checkerboard type of high and low values of laterally varying Q models. The total number of Q blocks used for the checkerboard test was 75 (grid size of $35{\times}44km^2$ for Q blocks); Q functional form of $Q_0f^{\eta}$ ($Q_0$=100 or 500, 0.0 < ${\eta}$ < 1.0) was assigned to each Q block for the checkerboard test. The checkerboard test has been implemented in three steps. At the first step, the initial values of Q-values for 75 blocks were estimated. At the second step, the site amplification function was estimated by using the initial guess of A(f) which is the mean site amplification functions (Yun and Suh, 2007) for the site class. The last step is to invert the tomographic Q-values of 75 blocks based on the results of the first and second steps. As a result of the checkerboard test, it was demonstrated that Q-values could be robustly estimated by using the 2D Q tomography inversion method even in the presence of perturbed source and site effects from the true input model.