• Title/Summary/Keyword: variable gain amplifier(VGA)

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A Highly Linear CMOS Baseband Chain for Wideband Wireless Applications

  • Yoo, Seoung-Jae;Ismail, Mohammed
    • ETRI Journal
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    • v.26 no.5
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    • pp.486-492
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    • 2004
  • The emergence of wide channel bandwidth wireless standards requires the use of a highly linear, wideband integrated CMOS baseband chain with moderate power consumption. In this paper, we present the design of highly linear, wideband active RC filters and a digitally programmable variable gain amplifier. To achieve a high unity gain bandwidth product with moderate power consumption, the feed-forward compensation technique is applied for the design of wideband active RC filters. Measured results from a $0.5{\mu}m$ CMOS prototype baseband chain show a cutoff frequency of 10 MHz, a variable gain range of 33 dB, an in-band IIP3 of 13 dBV, and an input referred noise of 114 ${\mu}Vrms$ while dissipating 20 mW from a 3 V supply.

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A Study on Backscatter Field Reduction of the Curved Aluminum Plate using Active Cancellation Circuit (능동 상쇄 회로를 이용한 곡면 알루미늄 판의 Backscatter Field 감쇄 연구)

  • Kim, Junhwan;Chung, Young-Seek;Cheon, Changyul
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.2
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    • pp.276-279
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    • 2015
  • This paper propose a method to reduce the backscatter field of the curved aluminum plate using the cancellation system. The cancellation circuit is composed of a circulator, a LNA(Low Noise Amplifier), a VGA(Variable Gain Amplifier) and two phase shifters. Prior to experiment, we performed simulations to confirm the possibility using FDTD(Finite Difference Time Domain) simulator. We confirmed that the backscatter field could be reduced by the cancellation circuit when we changed the appropriate gain and phase. Finally, we performed an experiment to verify the performance of the cancellation circuit.

A Signal Readout System for CNT Sensor Arrays (CNT 센서 어레이를 위한 신호 검출 시스템)

  • Shin, Young-San;Wee, Jae-Kyung;Song, In-Chae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.9
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    • pp.31-39
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    • 2011
  • In this paper, we propose a signal readout system with small area and low power consumption for CNT sensor arrays. The proposed system consists of signal readout circuitry, a digital controller, and UART I/O. The key components of the signal readout circuitry are 64 transimpedance amplifiers (TIA) and SAR-ADC with 11-bit resolution. The TIA adopts an active input current mirror (AICM) for voltage biasing and current amplification of a sensor. The proposed architecture can reduce area and power without sampling rate degradation because the 64 TIAs share a variable gain amplifier (VGA) which needs large area and high power due to resistive feedback. In addition, the SAR-ADC is designed for low power with modified algorithm where the operation of the lower bits can be skipped according to an input voltage level. The operation of ADC is controlled by a digital controller based on UART protocol. The data of ADC can be monitored on a computer terminal. The signal readout circuitry was designed with 0.13${\mu}m$ CMOS technology. It occupies the area of 0.173 $mm^2$ and consumes 77.06${\mu}W$ at the conversion rate of 640 samples/s. According to measurement, the linearity error is under 5.3% in the input sensing current range of 10nA - 10${\mu}A$. The UART I/O and the digital controller were designed with 0.18${\mu}m$ CMOS technology and their area is 0.251 $mm^2$.

Analog Front-End Circuit Design for Bio-Potential Measurement (생체신호 측정을 위한 아날로그 전단 부 회로 설계)

  • Lim, Shin-Il
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.11
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    • pp.130-137
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    • 2013
  • This paper presents analog front-end(AFE) circuits for bio-potential measurement. The proposed AFE is composed of IA(instrument amplifier), BPF(band-pass filter), VGA(variable gain amplifier) and SAR(successive approximation register) type ADC. The low gm(LGM) circuits with current division technique and Miller capacitance with high gain amplifier enable IA to implement on-chip AC-coupling without external passive components. Spilt capacitor array with capacitor division technique and asynchronous control make the 12-b ADC with low power consumption and small die area. The total current consumption of proposed AFE is 6.3uA at 1.8V.

A 3.1 to 5 GHz CMOS Transceiver for DS-UWB Systems

  • Park, Bong-Hyuk;Lee, Kyung-Ai;Hong, Song-Cheol;Choi, Sang-Sung
    • ETRI Journal
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    • v.29 no.4
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    • pp.421-429
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    • 2007
  • This paper presents a direct-conversion CMOS transceiver for fully digital DS-UWB systems. The transceiver includes all of the radio building blocks, such as a T/R switch, a low noise amplifier, an I/Q demodulator, a low pass filter, a variable gain amplifier as a receiver, the same receiver blocks as a transmitter including a phase-locked loop (PLL), and a voltage controlled oscillator (VCO). A single-ended-to-differential converter is implemented in the down-conversion mixer and a differential-to-single-ended converter is implemented in the driver amplifier stage. The chip is fabricated on a 9.0 $mm^2$ die using standard 0.18 ${\mu}m$ CMOS technology and a 64-pin MicroLead Frame package. Experimental results show the total current consumption is 143 mA including the PLL and VCO. The chip has a 3.5 dB receiver gain flatness at the 660 MHz bandwidth. These results indicate that the architecture and circuits are adaptable to the implementation of a wideband, low-power, and high-speed wireless personal area network.

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A 0.13 ${\mu}m$ CMOS UWB RF Transmitter with an On-Chip T/R Switch

  • Kim, Chang-Wan;Duong, Quoc-Hoang;Lee, Seung-Sik;Lee, Sang-Gug
    • ETRI Journal
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    • v.30 no.4
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    • pp.526-534
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    • 2008
  • This paper presents a fully integrated 0.13 ${\mu}m$ CMOS MB-OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low-pass filter, a variable gain amplifier, a voltage-to-current converter, an I/Q up-mixer, a differential-to-single-ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 ${\mu}m$ CMOS technology. The fabricated transmitter shows a -3 dB bandwidth of 550 MHz at each sub-band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.

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dB-Linear Function Circuit Using Composite NMOS Transistor

  • Duong Hoang Nam;Duong Quoe Hoang
    • Proceedings of the IEEK Conference
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    • 2004.08c
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    • pp.494-498
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    • 2004
  • In this paper, the design of a CMOS exponential V-I converter (EVIC,) based on Taylor's concept, is presented. The composite NMOS transistor is used for realizing the exponential characteristics. In a 0.25 $\mu$m CMOS process, the simulations show more than 20 dB output current range and 15 dB linear range with the linearity error less than $\pm$ 0.5 dB. The power dissipation is less than 0.3 mW with $\pm$ 1.5 V supply voltage. The proposed EVIC can be used for the design of an extremely low­voltage and low-power variable gain amplifier (VGA) and automatic gain control (AGC).

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ULTRA LOW-POWER AND HIGH dB-LINEAR CMOS EXPONENTIAL VOLTAGE-MODE CIRCUIT

  • Duong Quoc-Hoang;Lee Sang-Gug
    • Proceedings of the IEEK Conference
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    • summer
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    • pp.221-224
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    • 2004
  • This paper proposed an ultra low-power CMOS exponential voltage-mode circuit using the Pseudo-exponential function for realizing the exponential characteristics. The proposed circuit provides high dB-linear output voltage range at low-voltage applications. In a $0.25\;\mu m$ CMOS process, the simulations show more than 35 dB output voltage range and 26 dB with the linearity error less than $\pm0.5\;dB.$ The average current consumption is less than 80 uA. The proposed circuit can be used for the design of an extremely low-power variable gain amplifier (VGA) and automatic gain control (AGC).

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Design of Current-Type Readout Integrated Circuit for 160 × 120 Pixel Array Applications

  • Jung, Eun-Sik;Bae, Young-Seok;Sung, Man-Young
    • Journal of Electrical Engineering and Technology
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    • v.7 no.2
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    • pp.221-224
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    • 2012
  • We propose a Readout Integrated Circuit (ROIC), which applies a fixed current bias sensing method to the input stage in order to simplify the circuit structure and the infrared sensor characteristic control. For the sample-and-hold stage to display and control a signal detected by the infrared sensor using a two-dimensional (2D) focal plane array, a differential delta sampling (DDS) circuit is proposed, which effectively removes the FPN. In addition, the output characteristic is improved to have wider bandwidth and higher gain by applying a two-stage variable gain amplifier (VGA). The output characteristic of the proposed device was 23.91 mV/$^{\circ}C$, and the linearity error rate was less than 0.22%. After checking the performance of the ROIC using HSPICE simulation, the chip was manufactured and measured using the SMIC 0.35 um standard CMOS process to confirm that the simulation results from the actual design are in good agreement with the measurement results.

A 1.2 V 12 b 60 MS/s CMOS Analog Front-End for Image Signal Processing Applications

  • Jeon, Young-Deuk;Cho, Young-Kyun;Nam, Jae-Won;Lee, Seung-Chul;Kwon, Jong-Kee
    • ETRI Journal
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    • v.31 no.6
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    • pp.717-724
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    • 2009
  • This paper describes a 1.2 V 12 b 60 MS/s CMOS analog front-end (AFE) employing low-power and flexible design techniques for image signal processing. An op-amp preset technique and programmable capacitor array scheme are used in a variable gain amplifier to reduce the power consumption with a small area of the AFE. A pipelined analog-to-digital converter with variable resolution and a clock detector provide operation flexibility with regard to resolution and speed. The AFE is fabricated in a 0.13 ${\mu}m$ CMOS process and shows a gain error of 0.68 LSB with 0.0352 dB gain steps and a differential/integral nonlinearity of 0.64/1.58 LSB. The signal-to-noise ratio of the AFE is 59.7 dB at a 60 MHz sampling frequency. The AFE occupies 1.73 $mm^2$ and dissipates 64 mW from a 1.2 V supply. Also, the performance of the proposed AFE is demonstrated by an implementation of an image signal processing platform for digital camcorders.