• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.572-572
• /
• 2012

Growth of metal oxides on graphene may lead to a better understanding of delicate effects of their growth habits on their underlying physics. The vanadium dioxide ($VO_2$) is well known for its metal-to-insulator transition accompanied by a reversible first order structural phase transition at 340 K. This transition makes $VO_2$ a potentially useful material for applications in electrical and optical devices. We report a successful growth of $VO_2$ nanostructures on a graphene substrate via a vapor-solid transport route. As-grown $VO_2$ nanostructures on graphene were systematically characterized by field emission scanning electron microscopy, x-ray diffraction, Raman spectroscopy, FT-IR spectroscopy and high resolution transmission electron microscopy. These results indicate that the strain between $VO_2$ and graphene layers may be easily controlled by the number of underlying graphene layer. We also found that the strain in-between $VO_2$ and graphene layer affected its metal-to-insulator transition characteristics. This study demonstrates a new way for synthesizing $VO_2$ in a desired phase on the transparent conducting graphene substrate and an easy pathway for controlling metal-to-insulator phase transition via strain.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.354-354
• /
• 2012

In this study, we report the vertically aligned ZnO nanowires by using different type of Ga-doped ZnO (GZO) thin films as seed layers to investigate how the underlying GZO film micro structure affects the distribution of ZnO nanowires. Arrays of highly ordered ZnO nanowires have been synthesized on GZO thin film seed layer prepared on p-Si substrates ($7-13{\Omega}cm$) with utilize of a pulsed laser deposition (PLD). With the vapor-liquid-solid (VLS) growth process, the ZnO nanowire synthesis carries out no metal catalyst and is cost-effective; furthermore, The GZO seed layer facilitates the uniform growth of well-aligned ZnO nanowires. The influence of the growth temperature and various thickness of GZO seed layer have been analyzed. Crystallinity of grown seed layer was studied by X-Ray diffraction (XRD); diameter and morphology of ZnO nanowires on seed layer were investigated by field emission scanning electron microscopy (FE-SEM). Our results suggest that the GZO seed layer with high c-axis orientation, good crystallinity, and less lattice mismatch is key parameters to optimize the growth of well-aligned ZnO nanowire arrays.

• Journal of Electrochemical Science and Technology
• /
• 제11권4호
• /
• pp.392-398
• /
• 2020

Producing solar grade silicon using an inexpensive method is a key factor in lowering silicon solar cell costs; the direct electrochemical reduction of SiO₂ in molten salt is one of the more promising candidates for manufacturing this silicon. In this study, SiO₂ granules were electrochemically reduced in molten CaCl₂ (850℃) using Ag-Si eutectic droplets that catalyze electrochemical reduction and purify the Si product. When Ag is used as the working electrode, the Ag-Si eutectic mixture is formed naturally during SiO₂ reduction. However, since the Ag-Si eutectic droplets are liquid at 850℃, they are easily lost during the reduction process. To minimize the loss of liquid Ag-Si eutectic droplets, a cylindrical graphite container working electrode was introduced and Ag was added separately to the working electrode along with the SiO₂ granules. The graphite container working electrode successfully prevented the loss of the Ag-Si eutectic droplets during reduction. As a result, the Ag-Si eutectic droplets acted as stable catalysts for the electrochemical reduction of SiO₂, thereby producing one-dimensional Si rods through a mechanism similar to that of vapor-liquid-solid growth.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2000년도 하계학술대회 논문집 C
• /
• pp.1720-1723
• /
• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.

• Bulletin of the Korean Chemical Society
• /
• 제25권1호
• /
• pp.51-54
• /
• 2004

Gallium nitride (GaN) powders were prepared by calcining a gallium(III) nitrate salt in flowing ammonia in the temperature ranging from 500 to 1050 $^{\circ}C$. The process of conversion of the salt to GaN was monitored by X-ray diffraction and $^{71}Ga$ MAS (magic-angle spinning) NMR spectroscopy. The salt decomposed to ${\gamma}-Ga_2O_3$ and then converted to GaN without ${\gamma}-{\beta}Ga_2O_3$ phase transition. It is most likely that the conversion of ${\gamma}-Ga_2O_3$ to GaN does not proceed through $Ga_2O$ but stepwise via amorphous gallium oxynitride ($GaO_xN_y$) as intermediates. The GaN nanowires and microcrystals were obtained by calcining the pellet containing a mixture of ${\gamma}-Ga_2O_3$ and carbon in flowing ammonia at 900 $^{\circ}C$ for 15 h. The growth of the nanowire might be explained by the vapor-solid (VS) mechanism in a confined reactor. Room-temperature photoluminescence spectra of as-synthesized GaN powders obtained showed the emission peak at 363 nm.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2009년도 추계학술발표대회 논문집
• /
• pp.168-174
• /
• 2009

High water vapour content in air can cause a number of problems as for human or surrounding materials. For human a high water vapour can create physiological stress, discomfort, and also can encourage ill health. While, the cause for the environment is can accelerate the corrosion of metals, accelerate the growth of spores and mould, can reduce the electrical resistance of insulators and etc. Desiccant systems have been proposed as energy saving alternatives to vapor compression air conditioning for handling especially the latent load and also sensible load. Use of liquid desiccants offers several design and performance advantages over solid desiccants, especially when solar energy is used for regeneration. The liquid desiccants contact the gas inside the packed tower of liquid desiccant solar cooling system and the heat transfer and mass transfer will occur. This thesis is trying to study the characteristics inside the packed tower of dehumidifier systems. This characteristics consist of mass transfer rate, heat transfers rate, human comfort and energy that consume by the system. Those characteristics were affected by air flow rates, air temperature and humidity, and desiccant temperature and all that variation will influence the performance of the systems. The results of this thesis later on can be used to determine the best performance of the systems.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.122-122
• /
• 2010

ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.150-150
• /
• 2016

Mankind is enjoying a great convenience of their life by the rapid growth of secondary industry since the Industrial Revolution and it is possible due to the invention of huge power such as engine. The automobile which plays the important role of industrial development and human movement is powered by the Engine Module, and especially Diesel engine is widely used because of mechanical durability and energy efficiency. The main work mechanism of the Diesel engine is composed of inhalation of the organic material (coal, oil, etc.), combustion, explosion and exhaust Cycle process then the carbon compound emissions during the last exhaust process are essential which is known as the major causes of air pollution issues in recent years. In particular, COx, called carbon oxide compound which is composed of a very small size of the particles from several ten to hundred nano meter and they exist as a suspension in the atmosphere. These Diesel particles can be accumulated at the respiratory organs and cause many serious diseases. In order to compensate for the weak point of such a Diesel Engine, the DPF(Diesel Particulate Filter) post-cleaning equipment has been used and it mainly consists of ceramic materials(SiC, Cordierite etc) because of the necessity for the engine system durability on the exposure of high temperature, high pressure and chemical harsh environmental. Ceramic Material filter, but it remains a lot of problems yet, such as limitations of collecting very small particles below micro size, high cost due to difficulties of manufacturing process and low fuel consumption efficiency due to back pressure increase by the small pore structure. This study is to test the possibility of new structure by direct infiltration of SiC Whisker on Carbon felt as the next generation filter and this new filter is expected to improve the above various problems of the Ceramic DPF currently in use and reduction of the cost simultaneously. In this experiment, non-catalytic VS CVD (Vapor-Solid Chemical Vaporized Deposition) system was adopted to keep high mechanical properties of SiC and MTS (Methyl-Trichloro-Silane) gas used as source and H2 gas used as dilute gas. From this, the suitable whisker growth for high performance filter was observed depending on each deposition conditions change (input gas ratio, temperature, mass flow rate etc.).

• 전자공학회논문지A
• /
• 제31A권7호
• /
• pp.85-94
• /
• 1994

A high-resolution transmission electron microscopy study of the solid phase crystallization of the amorphous silicon thin films, deposited on SiOS12T at 52$0^{\circ}C$ by low pressure chemical vapor deposition and annealed at 55$0^{\circ}C$ in a dry N$_{2}$ ambient was carried out so that the arrangement of atoms in the crystalline silicon and at the amorphous/crystalline interface of the growing grains could be understood on an atomic level. Results show that circular crystalline silicon nuclei have formed and then the grains grow to an elliptical or dendritic shape. In the interior of all the grains many twins whose{111} coherent boundaries are parallel to the long axes of the grains are observed. From this result, it is concluded that the twins enhance the preferential grain growth in the <112> direction along {111} twin planes. In addition to the twins. many defect such as intrinsic stacking faults, extrinsic stacking faults, and Shockley partial dislocations, which can be formed by the errors in the stacking sequence or by the dissociation of the perfect dislocation are found in the silicon grain. But neither frank partial dislocations which can be formed by the condensation of excess silicon atoms or vacancies and can form stacking fault nor perfect dislocations which can be formed by the plastic deformation are observed. So it is concluded that most defects in the silicon grain are formed by the errors in the stacking sequence during the crystallization process of the amorphous silicon thin films.

• Applied Microscopy
• /
• 제33권1호
• /
• pp.17-23
• /
• 2003

습식 산화 분위기에서 vapor-solid process를 통해 금속 촉매를 사용하지 않고도 낮은 온도에서 산화 인듐나노선을 성공적으로 합성하였다. 나노선은 x-선 회절(XRD), 분산 x-선 분광 분석기(EDS)를 갖춘 주사전자현미경(SEM), 투과전자현미경(TEM)을 통해 분석되었다. XRD 결과는 합성된 산화 인듐 나노선이 입방정 구조를 갖는다는 것을 보여준다. 이러한 나노선들은 두 가지 형태를 갖는다. 하나는 줄기에 약 500 nm 크기의 각진 나노입자가 형성된 형태이고 다른 하나는 나노입자가 형성되지 않은 형태이다. 나노선의 길이는 수 마이크로미터 범위이고, 두께는 약 10 nm에서 250 nm 범위이다. 나노선은 결함을 포함하지 않았으며 표면에 5 nm 이하의 비정질 층을 가지고 있었다. TEM 분석 결과 대부분의 나노선의 성장 방향은 <100> 방향이었으나 나노입자를 포함한 나노선은 <110> 방향으로 자랐다는 것이 발견되었다. 이러한 성장 방향은 이전의 문헌에서 보고되지 않은 새로운 결과이다. 일반적인 성장 방향과는 다른 새로운 방향으로 나노선이 자랄 수 있었던 것은 본 연구에서 산화물 합성 시 산소의 공급원으로 사용된 습식 분위기와 비교적 낮은 온도가 원인인 것으로 생각된다. 따라서 습식 산화 분위기에서의 나노선 합성법을 다른 여러 산화물의 나노선 합성에 응용한다면 낮은 온도에서 새로운 형태 및 성장 방향을 갖는 나노선을 얻을 수 있을 것으로 예상된다.