• Title/Summary/Keyword: vapor treatment

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Analyses of Thermodynamic Vaporization Behaviour and Voloxidaion Conditions for Metal Oxides (금속산화물의 열역학적 휘발 거동 및 휘발 산화 공정의 조건 분석)

  • Lee, Young Woo;Park, So Young;Park, Byung Heung
    • Journal of Institute of Convergence Technology
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    • v.3 no.2
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    • pp.7-10
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    • 2013
  • Metal oxides are known as stable materials during a thermal treatment. However, some oxides are readily evaporated at high temperatures. A voloxidation process is a head-end process for a pyroprocessing dealing with spent nuclear fuels (SF). In SFs, fission productions are in the form of oxides and some of them would be evaporated during the voloxidation process. Therefore, it is of importance to analyse the vapor pressures of metal oxides so that the material flows throughout the pyroprocessing could be estimated. In this work, vapor pressures of relevant metal oxides were calculated and presented to draw a baseline on the material flow of the pyroprocessing.

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Various Shape of Carbon Layer on Ga2O3 Thin Film by Controlling Methane Fraction in Radio Frequency Plasma Chemical Vapor Deposition (Ga2O3박막 상에서의 RF 플라즈마 화학기상증착법의 메테인 분율 조절에 의한 탄소층의 다양한 형상 제어 연구)

  • Seo, Ji-Yeon;Shin, Yun-Ji;Jeong, Seong-Min;Kim, Tae-Gyu;Bae, Si-Young
    • Journal of the Korean Society for Heat Treatment
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    • v.35 no.2
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    • pp.51-56
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    • 2022
  • In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga2O3 templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.

Plasma treatment on PMMA, PET & ABS for Superhydrophobicity (플라즈마 처리에 의한 PMMA, PET, ABS의 초발수 효과)

  • Choi, Gyoung-Rin;Noh, Jung-Hyun;Lee, Jun-Hee;Kim, Wan-Doo;Lim, Hyun-Eui
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.1582-1584
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    • 2008
  • This paper reports a simple fabrication method for creating the superhydrophobic polymer surface using a plasma etching. Generally, it is necessary for the superhydrophobic surfaces to have a rough structure on surface with the composition of the low surface energy. In this study, Poly(methyl methacrylate) (PMMA), poly(ethylene terephthalate) (PET), acrylonitrile butadiene styrene (ABS) with superhydrophobic surface were fabricated using $O_2$ plasma etching and vapor deposition with the fluoroalkylsilane self-assembled monolayers. The plasma treated polymer surfaces are covered with the nano-pillar shaped structures after treatment for $1{\sim}2min$. And these samples with FOTS SAMs coating are showed the superhydrophobicity having the water contact angle of around $150^{\circ}$ and sometimes around $180^{\circ}$ depending on the treatment time. Furthermore the nanostructured polymer is transparent for the visible light.

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Diffusion coefficient estimation of Si vapor infiltration into porous graphite

  • Park, Jang-Sick
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.190.1-190.1
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    • 2015
  • Graphite has excellent mechanical and physical properties. It is known to advanced materials and is used to materials for molds, thermal treatment of furnace, sinter of diamond and cemented carbide tool etc. SiC materials are coated on the surface and holes of graphite to protect particles emitted from porous graphite with 5%~20% porosity and make graphite hard surface. SiC materials have high durability and thermal stability. Thermal CVD method is widely used to manufacture SiC thin films but high cost of machine investment and production are required. SiC thin films manufactured by Si reaction liquid and vapore with carbon are effective because of low cost of machine and production. SiC thin films made by vapor silicon infiltration into porous graphite can be obtained for shorter time than liquid silicon. Si materials are evaporated to the graphite surface in about $10^{-2}$ torr and high temperature. Si materials are melted in $1410^{\circ}C$. Si vapor is infiltrated into the surface hole of porous graphite and $Si_xC_y$ compound is made. $Si_x$ component is proportional to the Si vapor concentration. Si diffusion coefficient is estimated from quadratic equation obtained by Fick's second law. The steady stae is assumed. Si concentration variation for the depth from graphite surface is fitted to quadratic equation. Diffusion coefficient of Si vapor is estimated at about $10^{-8}cm^2s^{-1}$.

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Residual Liquid Behavior Calculation for Vacuum Distillation of Multi-component Chloride System (다성분 염화물계 진공 증류의 잔류 액체 거동 계산)

  • Park, Byung Heung
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.12 no.3
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    • pp.179-189
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    • 2014
  • Pyroprocessing has been developed for the purpose of resolving the current spent nuclear fuel management issue and enhancing the recycle of valuable resources. An electrolytic reduction of the pyroprocessing is a process to reduce oxides into metals using LiCl as an electrolyte and requires a post-treatment process due to the inclusion of residual salt in porous metal products. A vacuum distillation has been adopted for various molten salt systems and could be applied to the post-treatment process of the electrolytic reduction. The residual salt in the metal products includes LiCl, alkali chlorides, and alkaline earth chlorides. In this paper, vapor pressures of chlorides have been estimated and the composition changes on the residual liquid during the vacuum distillation process have been calculated. A model combining a material balance and vapor-liquid equilibrium relations has been proposed under a constant vapor discharging flow rate and liquid composition changes have been calculated using the vapor pressures with respect to a dimensionless time. The behaviors have been compared with temperature and molten salt composition changes to simulate the process condition variation. The distillation of the residual salt has been dominated by LiCl which is the main component of the salt and CsCl of which vapor pressure is higher than that of LiCl would be readily removed. RbCl exhibits similar vapor pressure with LiCl and maintains its composition. However, $SrCl_2$ and $BaCl_2$ of which vapor pressures are much lower than that of LiCl are concentrated with time and expected to be possibly precipitated during the distillation when the initial compositions are increased.

Decomposition of Trchloroethylene/Air Mixture by Electron Beam Irradiation in a Flow Reactor (전자빔을 이용한 흐름반응기에서의 Trichloroethylene/Air 분해)

  • ;;;Tatiana Stuchinskaya
    • Journal of Korean Society for Atmospheric Environment
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    • v.17 no.1
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    • pp.97-104
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    • 2001
  • Decomposition of trichloroethlyene(TCE) in electron beam irradiation was examined on order to obtain information on the treatment of VOC in air. Air containing vaporized TCE has been studied in a flow reactor with different reaction environments, at various initial TCE concentration and in the presence and absence of water vapor. Maximum decomposition was observed in oxygen reaction environment and the degree of decomposition was about 99% at 20kGy for 2,000ppm initial TCE. The concentration of TCE exponentially decreased with dose in air and pure oxygen. The effect of water vapor on TCE decomposition efficiency was examined. The decomposition rate of TCE in the presence of water vapor (5,600 ppm) was approximately 10% higher than that in the absence of water vapor. Dichloroacetic acid, dichloroacethyl chloride and dichloroethyl ester acid were identified as primary products of this reaction adn were decomposed and oxidized to yield CO and $CO_2$. Perchloroethylene, hexachloroethane, chloroform and carbon tetrachloride were also observed as highly chlorinat-ed by products.

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Effects of the Electroless Ni-P Thickness and Assembly Process on Solder Ball Joint Reliability (무전해 Ni-P 두께와 Assembly Process가 Solder Ball Joint의 신뢰성에 미치는 영향)

  • Lee, Ji-Hye;Huh, Seok-Hwan;Jung, Gi-Ho;Ham, Suk-Jin
    • Journal of Welding and Joining
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    • v.32 no.3
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    • pp.60-67
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    • 2014
  • The ability of electronic packages and assemblies to resist solder joint failure is becoming a growing concern. This paper reports on a study of high speed shear energy of Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder with different electroless Ni-P thickness, with $HNO_3$ vapor's status, and with various pre-conditions. A high speed shear testing of solder joints was conducted to find a relationship between the thickness of Ni-P deposit and the brittle fracture in electroless Ni-P deposit/SAC405 solder interconnection. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the fractured pad surface with and without $HNO_3$ vapor treatment. A scanning electron microscopy (SEM) and an energy dispersive x-ray analysis (EDS) confirmed that there were three intermetallic compound (IMC) layers at the SAC405 solder joint interface: $(Ni,Cu)_3Sn_4$ layer, $(Ni,Cu)_2SnP$ layer, and $(Ni,Sn)_3P$ layer. The high speed shear energy of SAC405 solder joint with $3{\mu}m$ Ni-P deposit was found to be lower in pre-condition level#2, compared to that of $6{\mu}m$ Ni-P deposit. Results of focused ion beam and energy dispersive x-ray analysis of the fractured pad surfaces support the suggestion that the brittle fracture of $3{\mu}m$ Ni-P deposit is the result of Ni corrosion in the pre-condition level#2 and the $HNO_3$ vapor treatment.

Properties of the Chemically Vapor Deposited Alumina Thin Film and Powder on Heat Treatment (CVD법으로 합성된 알루미나 박막 및 분말의 열처리에 따른 특성)

  • 최두진;정형진
    • Journal of the Korean Ceramic Society
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    • v.26 no.2
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    • pp.235-241
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    • 1989
  • A study on the APCVD(atmospheric pressure chemical vapor deposition) Al2O3 was done by using the aluminum-tri-isopropoxide/N2 reaction system at 40$0^{\circ}C$. When the flow rate of the carrier gas(N2) was over 2SLPM, heterogeneous reaction was observed. However, when the flow rate of the carrier gas was below 2SLPM, a porously deposited film or powder formation was observed. The film formed by a heterogeneous reaction was optically dense. The dense film is thought to be a kind of a hydrated alumina. After a thermal treatment of the film in the range of temperature from $600^{\circ}C$ to 1, 20$0^{\circ}C$, properties of the film seems to be changed due to dehydration and densification process. In the case of the powder on heat treatment(600~1, 20$0^{\circ}C$), both a phase transformation and the change of OH peak was observed.

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Incorporation of Titanium into H-ZSM-5 Zeolite via Chemical Vapor Deposition: Effect of Steam Treatment

  • Xu, Cheng-Hua;Jin, Tai-Huan;Jhung, Sung-Hwa;Hwang, Jin-Soo;Chang, Jong-San;Qiu, Fa-Li;Park, Sang-Eon
    • Bulletin of the Korean Chemical Society
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    • v.25 no.5
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    • pp.681-686
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    • 2004
  • Ti-ZSM-5 prepared by secondary synthesis, from the reaction of H-ZSM-5 with vapor phase $TiCl_4$, was characterized with several physicochemical techniques including FT-IR and UV/VIS-DRS. It was found that zeolite structure, surface area and pore volume did not change, and the framework aluminum could not be replaced by titanium atom during the secondary synthesis of Ti-ZSM-5. The incorporation of titanium into the framework might be due to reaction of $TiCl_4$with the silanol groups associated with defects or surface sites. The formation of extra-framework titanium could not be avoided, unless the samples were further treated by water vapor at 550 $^{\circ}C$ or higher temperature. High temperature steam treatment of Ti-ZSM-5 prepared by chemical vapor deposition with $TiCl_4$was efficient to prevent the formation of non-framework titanium species. Ti-ZSM-5 zeolites prepared in this work contained only framework titanium species and exhibited improved catalytic property close to TS-1 prepared by hydrothermal synthesis.