• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.257-264
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• 1994

The objectives of this study were to develop the low pressure chemical vapor deposition(LPCVD) process of SiC and to fabricate pure and dense SiC layer onto graphite substrate at low temperature. The deposition experiments were performed using the MTS-H2 system (30 torr) in the deposition temperature ranging from 100$0^{\circ}C$ to 120$0^{\circ}C$. The deposition rate of SiC was increased with the temperature. The rate controlling step can be classified from calculated results of the apparent thermal activation energy as follows; surface reaction below 110$0^{\circ}C$ and gas phase diffusion through a stagnant layer over 110$0^{\circ}C$. The deposited layer was $\beta$-SiC with a preferred orientation of (111) and the strongly faceted SiC deposits were observed over 115$0^{\circ}C$.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2002.04a
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• pp.65-69
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• 2002

Unsteady vaporization of a droplet quiescent in a high pressure environment are studied with emphasis placed oil the modeling of equilibrium at vapor-liquid interface. Complete set of conservation equations for liquid and gas phases is numerically time integrated. Vapor-liquid interfacial thermodynamics are solved by f]ash equilibrium calculation method. The model was proper]y validated with experiment and the improvement in the solution accuracy was made. Vaporization of n-pentane fuel droplet in nitrogen background gas is examined. Effects of ambient gas solubility, property variation, transient diffusion, and multicomponent transport on the droplet vaporization are investigated systematically. High-pressure effects on the droplet vaporization is examined and discussed.

• Journal of Hydrogen and New Energy
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• v.28 no.6
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• pp.610-617
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• 2017

This paper presents a study of the effect of thickness of porous Al-Ni electrodes, on the Hydrogen Evolution Reaction (HER) in alkaline media. As varying deposition time at 300 W DC sputtering power, the thickness of the Al-Ni electrodes was controlled from 1 to $20{\mu}m$. The heat treatment was carried out in $610^{\circ}C$, followed by selective leaching of the Al-rich phase. XRD studies confirmed the presence of $Al_3Ni_2$ intermetallic compounds after the heat treatment, indicating the diffusion of Ni from the Ni-rich phase to Al-rich phase. The porous structure of the Al-Ni electrodes after the selective leaching of Al was also confirmed in SEM-EDS analysis. The double layer capacitance ($C_{dl}$) and roughness factor ($R_f$) of the electrodes were increased for the thicker Al-Ni electrodes. As opposed to the general results in above, there were no further improvements of the HER activity in the case of the electrode thickness above $10{\mu}m$. This result may indicate that the $R_f$ is not the primary factor for the HER activity in alkaline media.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.440-440
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• 2012

Nanomaterials have emerged as new building blocks to construct light energy harvesting assemblies. Size dependent properties provide the basis for developing new and effective systems with semiconductor nanoparticles, quantized charging effects in metal nanoparticle or their combinations in 2 and 3 dimensions for expanding the possibility of developing new strategies for photovoltaic system. As top-down approach, we developed a simple and effective method for the large scale formation of self-assembled Cu(In,Ga)$Se_2$ (CIGS) nanostructures by ion beam irradiation. The compositional changes and morphological evolution were observed as a function of the irradiation time. As the ion irradiation time increased, the nano-dots were transformed into a nano-ridge structure due to the difference in the sputtering yields and diffusion rates of each element and the competition between sputtering and diffusion processes during irradiation. As bottom-up approach, we developed the growth of CIGS nanowires using thermal-chemical vapor deposition (CVD) method. Vapor-phase synthesis is probably the most extensively explored approach to the formation of 1D nanostructures such as whiskers, nanorods, and nanowires. However, unlike binary or ternary chalcogenides, the synthesis of quaternary CIGS nanostructures is challenging because of the difficulty in controlling the stoichiometry and phase structure. We introduced a method for synthesis of the single crystalline CIGS nanowires in the form of chalcopyrite using thermal-CVD without catalyst. It was confirmed that the CIGS nanowires are epitaxially grown on a sapphire substrate, having a length ranged from 3 to 100 micrometers and a diameter from 30 to 500 nm.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.526-531
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• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Advances in nano research
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• v.13 no.2
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• pp.187-197
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• 2022

The synthesis of organic and hybrid organic-inorganic perovskites directly from solution improves the cost- and energy-efficiency of processing. To date, numerous research efforts have been devoted to investigating the influence of the various solvent parameters for the synthesis of lead halide perovskites, focused on the effects of different single solvents on the efficiency of the resulting perovskites. In this work, we investigated the effect of solvent blends for the first time on the structure and phase of perovskites produced via the Lewis base vapor diffusion method to develop a new synthetic approach for water-stable CsPbBr₃ particles with nanometer-sized dimensions. Solvent blends prepared with DMF and water-miscible solvents with different Gutmann's donor numbers (D_N) affect the Pb ions differently, resulting in a variety of lead bromide species with various colors. The use of a DMF/isopropanol solvent mixture was found to induce the formation of the Ruddlesden-Popper perovskite based on lead bromide. This perovskite undergoes a blue color shift in the solvated state owing to the separation of nanoplatelets. In contrast, the replacement of isopropanol with DMSO, which has a high DN, induces the formation of spherical CsPbBr₃ perovskite nanoparticles that exhibit green emission. Finally, the integration of acetone in the solvent system leads to the formation of lead bromide complexes with a yellow-orange color and the perovskite CsPbBr₃.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1117-1122
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• 1995

The effect of grain boundary structure on zigzag migrtion has been studied. Five kinds of a(2110)-m(1010) diffusion couples with different twist angles by 30$^{\circ}$from a [0001] common direction of each plane were prepared. When chromia (Cr2O3) was added to the diffusion couples by a vapor phase, zigzag migration of the grain boundary occurred. The fraction of zigzag migration did not essentially vary with the twist angle, but the magnitude and migration distance of individual migrating segment varied. The variation of CIGM morphology thus appears to result from the change in grain boundary mobility due to microscopic deviation of grain boundary structure out of a macroscopic grain boundary orientation.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.187-194
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• 1998

InGaAsP epitaxial layers lattice matched to InP were grown at 600 and $620^{\circ}C$ by low pressure metalorganic chemical vapor deposition. Solid phase composition of group III was controlled by the diffusion flux gas phase to the reachion surface. For the case of group V, the difference of As and P vapor pressure and pyrolysis efficiency of $PH_3$and $AsH_3$ mainly determined their in corporation into solid. An abnormal behavior of peak energy shift was observed below 75K in temperature variant photoluminescence study. This abnormal behavior was explained by the difference in order of ordering which makes spatial variation of energy gap in InGaAsP layer and this explanation was supported by the analyses of transmission electron microscopy and transmission spectroscopy.

• Applied Chemistry for Engineering
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• v.27 no.3
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• pp.335-341
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• 2016

In this study, impurity effects on diffusive-convection flow fields by physical vapor transport under terrestrial and microgravity conditions were numerically analyzed for the mixture of $Hg_2Cl_2-I_2$ system. The numerical analysis provides the essence of diffusive-convection flow as well as heat and mass transfer in the vapor phase during the physical vapor transport through velocity vector flow fields, streamlines, temperature, and concentration profiles. The total molar fluxes at the crystal regions were found to be much more sensitive to both the gravitational acceleration and the partial pressure of component $I_2$ as an impurity. Our results showed that the solutal effect tended to stabilize the diffusive-convection flow with increasing the partial pressure of component $I_2$. Under microgravity conditions below $10^{-3}g_0$, the flow fields showed a one-dimensional parabolic flow structure indicating a diffusion-dominant mode. In other words, at the gravitational levels less than $10^{-3}g_0$, the effects of convection would be negligible.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.28 no.1B
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• pp.137-147
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• 2008

Soil Vapor Extraction (SVE) has been extensively used to remove volatile organic compounds (VOCs) from the vadoze zone. In order to investigate the removal mechanism during SVE operation, laboratory modeling experiments were carried out and tailing effect could be observed in later stage of the experiment. Tailing effect means that removal rate of contaminants gets significantly to decrease in later stage of SVE operation. Also, mathematical model simulating the tailing effect was used, which considers rate-limited diffusion in a water film during mass transfer among gas, liquid, and solid phases. Measurement data obtained through the experiment was used as input data of the numerical analyses. Sensitivity analysis was performed to examine the effect of each parameter on required time to reach final target concentration. Finally, it was found that the concentration in the soil phase decreased significantly with a liquid and gas diffusion coefficient larger, actual path length shorter, and water saturation smaller.