• 한국막학회:학술대회논문집
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• 한국막학회 1999년도 The 7th Summer Workshop of the Membrane Society of Korea
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• pp.23-26
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• 1999

Urethane block copolymers, containing soft segments such as polydimethylsiloxane (PDMS), polytertramethylene glycol(PTMG) and PEO-PPO-PEO (Poloxamer) block copolymer, were synthesized and examined for th vapor- phase separation of toluene from nitrogen stream by using vapor permeation equipment. Generally permeabilities of PTMG and PDMS based urethane membranes were higher than those of Poloxamer based urethane membranes. Organic vapor permeability in the PDMS and PTMG soft segment urethane membranes were greater than those measured in the Poloxamer films, due to more polymer swelling. The membranes performed best with toluene, with toluene/dry N2 seletivities ranging from 120~200 and permeablilities as high as 23$\times$10-9 mol/m2sPa for saturated toluene feeds at 23$^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.95-100
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• 2000

For the well-controlled growing in-situ heavily phosphorus doped polycrystalline Si films directly on Si wafer by reduced pressure chemical vapor deposition, a study is made of the two step growth. When in-situ heavily phosphorus doped Si films were deposited directly on Si (100) wafer, crystal structure in the film is not unique, that is, the single crystal to polycrystalline phase transition occurs at a certain thickness. However, the well-controlled polycrtstalline Si films deposited by two step growth grew directly on Si wafers. Moreover, the two step growth, which employs crystallization of grew directly on Si wafers. Moreover, the two step growth which employs crystallization of amorphous silicon layer grown at low temperature, reveals crucial advantages in manipulating polycrystal structures of in-situ phosphorous doped silicon.

• 한국표면공학회지
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• 제32권3호
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• 한국결정성장학회지
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• 제19권1호
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• pp.6-10
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• 2009

본 논문에서는 혼합소스(mixed-source) HVPE(hydride vapor phase epitaxy)방법으로 선택성장(SAC: selective area growth) GaN/AlGaN 이종접합구조의 발광다이오드를 r-plane 사파이어 기판 위에 제작하였다. SAG-GaN/AlGaN DH(double heterostructure)는 고온 GaN 버퍼층, Te 도핑된 AlGaN n-클래딩층. Gan 활성층. Mg 도핑된 AlGaN p-클래딩층. Mg 도핑된 GaN p-캡층으로 구성되어있다. GaN/AlGaN 이종접합구조의 발광다이오드의 특성을 알아보기 위해 SEM을 통한 구조적 분석과 전류-전압 측정(I-V: current-voltage measurement), 전류-광출력(EL: electroluminescence) 측정을 통하여 전기적, 광학적 특성을 평가하였다.

• 대한기계학회논문집B
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• 제30권11호
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• pp.1035-1042
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• 2006

An experimental investigation was performed to study two-phase pressure drop of deionized water in a microchannel. Measurement and evaluation of two-phase frictional pressure gradient were carried out using a single horizontal rectangular microchanne1 having a hydraulic diameter of $100{\mu}m$. Tests were performed for mass fluxes of 90, 169, and 267 $kg/m^2$s and heat fluxes of 200-700 $kW/m^2$. Test results showed that the measured two-phase frictional pressure gradient increased with the mass flux and vapor quality. Most macro-channel correlations of two-phase frictional pressure gradient did not provide reliable predictions except under certain limited conditions.

• Korean Chemical Engineering Research
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• 제45권2호
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• pp.117-123
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• 2007

농업용 필름을 제조하는데 사용되는 EVA 공중합체, LDPE, LLDPE 혼합물의 접촉 열분해 반응에 있어서 MCM-41 촉매에 aluminium을 첨가가 생성물의 수율, 탄소 수 분포 등에 미치는 영향을 조사하였다. Aluminium은 direct 및 post 방법으로 첨가하였고, 열분해 반응은 액상 접촉과 기상 접촉 반응 결과를 비교하였다. Direct 또는 post 방법으로 aluminium이 첨가된 MCM-41에서 aluminium 첨가량이 증가할수록 Lewis 산점이 증가하여 전체 산점의 양이 증가하였는데 post 방법으로 제조된 촉매에서 산점의 양이 더 많이 증가하였다. 액상 접촉 반응에서 aluminium의 양이 증가하면 가벼운 탄화수소가 많이 생기는데, $C_5-C_{12}$ 범위의 탄소화합물의 생성에 Al-MCM-41-P 촉매가 더 효과가 컸다. 기상 접촉 반응에서는 Al-MCM-41-D와 Al-MCM-41-P사이의 차이가 액상 접촉 반응시보다 상대적으로 적게 나타났으나, 액상접촉 반응에 비해 $C_{13}-C_{32}$ 범위의 탄화수소가 크게 감소했음을 알 수 있다.

• 자원환경지질
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• 제37권2호
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• pp.185-193
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• 2004

휘발유와 같은 유기탄화수소계 오염 물질인 유류가 지하 분포 시, 불포화대에 분포하는 가스상(또는 증기상)유류와 지하수 포화대에 포획되어있는 잔류상 유류 오염 물질이 GPR(Ground Penetrating Radar)에 미치는 반응을 조사하기 위하여 모델 실험을 수행하였다. 모델 실험에는 모래와 자갈을 토양 매질로서 채운 탱크를 이용하였고, 유류 수송을 위한 매설 파이프 또는 지하 유류저장탱크로부터 유류의 누출을 모사하기 위하여 모델 탱크 바닥으로부터 물과 휘발유를 주입 또는 배출하여 지하수면의 상승과 하강을 유도하면서 다양한 상의 LNAPL지하분포를 모사하여 GPR 측정을 실시하였다. 본 연구 결과, 불포화대에서 매질의 수분함량 증가에 따른 레이다 파의 속도 감소를 보이는 민감한 GPR 반응이 관측되었으며, 지하수면의 상승과 하강에 따른 지하수면 위치 변화 관측에 있어서 GPR의 유용성이 입증되었다. 본 연구에서 모관대를 형성하고 있는 매질의 대수층에서는 실제 지하수면 대신 모관대의 상부가 지구물리학적 지하수면으로 탐지되었다. 또한 휘발유 주입 이후 형성된 불포화대내 가스상 LNAPL은 매질의 전기적 성질의 변화를 유도하여 레이다 파의 감쇠를 야기하는 GPR 반응을 나타내었다. 포화대 내의 잔류상 LNAPL에 대한 GPR 반응은 레이다 파의 매질내 속도 및 에너지 투과성을 향상시킴으로써 지하수면 상승으로 포화대에 포획된 잔류상 유류오염물질를 포함하는 대수층 지역의 탐지 가능성을 보여 주었다. 이는 유류오염물질이 지하수면 아래의 포화대에 잔류상의 형태로 분포하는 오염지역에서 GPR를 이용하여 유류오염지역을 탐지할 수 있는 새로운 탐사전략의 근거를 제공한다.

• Transactions on Electrical and Electronic Materials
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• 제2권1호
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• pp.1-6
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• 2001

$C_{x}F_{y}$ polymer film was deposited in rf and dc Fluorinert vapor ($C_{7}F_{16}$) plasmas. In the plasma phase, the spatial distribution of optical emission spectra and the temporal concentration of decomposed species were monitored, and kinetics of the $C_{7}F_{16}$ decomposition process was discussed. Deposition of $C_{x}F_{y}$ film has been tried on substrates of stainless steel, glass, molybdenum and silicon wafers at room temperature in the vapor pressures of 40 and 100 Pa. The films deposited in the rf plasma showed excellent electrical properties as an insulator for multi-layered interconnection of deep-submicron LSI, i.e. the low dielectric constant ∼2.0, the dielectric strength ∼2 MV/cm and the high deposition rate ∼100nm/min at 100W input power.

• 한국결정성장학회지
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• 제20권3호
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• pp.117-124
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• 2010

For Ar=5, Pr=1.18, Le=0.15, Pe=2.89, Cv=1.06, $P_B$=20 Torr, the effects of impurity $(N_2)$ on thermally and solutally buoyancy-driven convection ($Gr_t=3.46{\times}10^4$ and $Gr_s=6.02{\times}10^5$, respectively) are theoretically investigated for further understanding and insight into an essence of thermo-solutal convection occurring in the vapor phase during the physical vapor transport. For $10K{\leq}{\Delta}T{\leq}50K$, the crystal growth rates are intimately related and linearly proportional to a temperature difference between the source and crystal region which is a driving force for thermally buoyancy-driven convection. Moreover, both the dimensionless Peclet number (Pe) and dimensional maximum velocity magnitudes are directly and linearly proportional to ${\Delta}T$. The growth rate is second order-exponentially decayed for $2{\leq}Ar{\leq}5$. This is related to a finding that the effects of side walls tend to stabilize the thermo-solutal convection in the growth reactor. Finally, the growth rate is found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.

• 한국결정성장학회지
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• 제20권3호
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• pp.125-132
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• 2010

For typical governing dimensionless parameters of Ar = 5, Pr = 1.16, Le = 0.14, Pe = 3.57, Cv = 1.02, $Gr_s=2.65{\times}10^6$, the effects of thermo physical properties such as a molecular weight, a binary diffusivity coefficient, a partial pressure of component B on solutally buoyancy-driven convection (solutal Grashof number $Gr_s=2.65{\times}10^6$) are theoretically investigated for further understanding and insight into an essence of solutal convection occurring in the vapor phase during the physical vapor transport of a $Hg_2Cl_2-N_2$ system. The solutally buoyancy-driven convection is significantly affected by any significant disparity in the molecular weight of the crystal components and the impurity gas of nitrogen. The solutal convection in a vertical orientation is found to be more suppressed than a tenth reduction of gravitational accelerations in a horizontal orientation. For crystal growth parameters under consideration, the greater uniformity in the growth rate is obtained for either solutal convection mode in a vertical orientation or thermal convection mode in horizontal geometry. The growth rate is also found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.