• 한국결정학회지
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• 제8권2호
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• pp.81-88
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• 1997

GaN와 $NH_3$를 source gas로 사용하여 (0001) sapphire 기판에 CVPE(Chloride Vapor Epitaxy)방법으로 GaN 박막을 성장시킨후 그 특성을 조사하였다. 성장온도 $970^{\circ}C$ 부터 $1040^{\circ}C$ 영역에서 source gas의 유량비를 변화하면서 최적증착조건을 구현하였고, GaN증착이전에 $NH_3$ 가스로써 질화전처리를 하였다. 수행된 실험조건범위내에서 최적증착조건은 증착온도 $1040^{\circ}C$에서 질화전 처리 3분으로 III/V source gas의 유량비율이 2일 때 였으며, 이때의 XRD분석에서의 FWHM값은(0001) peak에서 약 0.32deg를 나타내었다. GaN박막성장속도는 이때 약 $1040^{\circ}C$였다.

• Korean Chemical Engineering Research
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• 제53권3호
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• pp.302-308
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• 2015

본 연구에서는 3-Methylpentane을 포함하는 Ethylene glycol monopropyl ether ($C_3E_1$) 및 Ethylene glycol isopropyl ether ($iC_3E_1$) 계면활성제 혼합물에 대한 2성분계 기-액 상 평형을 서로 다른 온도 조건(303.15, 318.15, 333.15K)에서 측정 및 비교하였다. $C_3E_1$은 분자 내 수소결합과 분자 간 수소결합이 동시에 나타나는 자가 회합 성 물질이므로 상 평형 예측을 어렵게 하는 경향이 있다. 본 연구의 목적은 $C_3E_1$ 혼합물과 그 이성질체인 $iC_3E_1$ 혼합물의 상 평형을 각각 측정 및 비교함으로써, 자가 회합 성 물질의 이성질체가 상 평형에 어떠한 영향을 미치는지 알아보는 것이다. 측정된 시스템은 PR-WS-NRTL, PR-WS-UNIQUAC, 그리고 PR-WS-WILSON 모델을 이용하여 각각 계산하고 각 모델의 성능을 비교하였다. 계산에 사용된 모델은 대부분 좋은 결과를 보여주었으며, 특히 PR-WS-NRTL 모델이 가장 좋은 결과를 나타냈다. 또한 측정 시스템 간의 상 평형 차이가 크게 발생하지 않은 것으로 보아 자가 회합 성 물질의 이성질체가 상 평형에 끼치는 영향은 크지 않음을 알 수 있었다.

• 한국세라믹학회지
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• 제34권12호
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• pp.1199-1204
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• 1997

SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

• 한국연초학회지
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• 제20권1호
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• pp.124-130
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• 1998

This study was conducted to evaluate the ability of anion generating air cleaner to remove gases, vapor and particles from closed room contaminated with environmental tobacco smoke (ETS). The measurements covered particle sizes of 13.8-542.5nm, particle concentration, surface area, volumes UVPM, FPM, solanesol, and the following gases and vapor; carbon dioxide, carbon monoxide, nicotine, and 3-ethenylpyridine. Tobacco smoke was generated and mixed in a closed room in which the airflow rates were in the range of 0.00-0.04 m/s. The anion generating air cleaner was startedl and the decay rates for the gases, vapor and particles were measured, When the use of anion generating air cleaner, solid components of ETS, such as respirable suspended particle (RSP), utraviolet particulate matter (UVPM, fluorescent particulate matter (FPM) and solanesol was sharply decreased, and vapor phase components of ETS, such as nicotines 3-ethenylpyidine were modelately decreased by time elapse. Even the use of anion generation air cleaner, the decreasing rate of carbon dioxide concentration was similar with control, and the decreasing rate of carbon monoxide was slower than that of control. Our results indicated that the use of anion generting air cleaner had an effect on reduction of solid and vapor components from ETs, but it had no effect on gaseous components of ETS.

• Journal of the Optical Society of Korea
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• 제14권3호
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• pp.209-214
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• 2010

The Raman shift of water vapor is 3657 $cm^{-1}$, and this Raman signal can be easily separated from other Raman signals or elastic signals. However, it is difficult to make simultaneous Raman measurements on the three phases of water, namely, ice water, liquid water, and water vapor. This is because we must consider the overlap between their Raman spectra. Therefore, very few groups have attempted to make Raman simultaneous measurements even on two elements (water vapor and liquid water, or water vapor and ice water). We have made an effort to find three characteristic Raman wavelengths that correspond to the three phases of water after measuring full Raman spectra of water on particular days that are rainy, snowy or clear. Finally, we have found that the 401-nm, 404-nm, and 408-nm wavelengths are the most characteristic Raman wavelengths that are representative of the water phases when we are using the 355-nm laser wavelength for making measurements.

• Journal of Korean Society for Atmospheric Environment
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• 제17권E3호
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• pp.101-107
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• 2001

Source profiles were developed for a total of 45 volatile organic compounds (VOC) that can be emitted from gasoline evaporation. The gasoline samples of five major brands (for each season) were blended on the basis of the market share in Seoul area and analyzed by a GC-MS/FID system. In addition, we calculated gasoline evaporative compositions using the Raoult's law from the liquid gasoline compositions. The measured and estimated gasoline vapor compositions agree well each other. As a group, alkanes are the most abundant in the gasoline vapors profiles (77.4% on average), followed by alkenes (19.1%), and aromatics (1.7%). As a specie in gasoline vapor, i-pentane is the most abundant, followed by n-butane, n-pentane, i-butane, trans-and cis-2-butenes, 2-methyl-2-butene, and trans-and cis-2-pentenes . It was also seen that aromatic content was much lower in the vapor phase compositions. From the comparison between experimental and calculated compositions, we identified the fact that once the gasoline vapor composition is reliably constructed entirely from the measured gasoline composition and the Raoult's law calculations, the need for doing separate chemical analyses of the gasoline vapor can be reduced.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.824-827
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• 2004

High performance green $Ir(ppy)_3$-based phosphorescent OLEDs (PHOLEDs) have been fabricated by organic vapor phase deposition ($OVPD^{TM}$). In addition to demonstrating both efficiency and operational device lifetime comparable to devices built by vacuum thermal evaporation, we report on the controllability and stability of the $OVPD^{TM}$ process. Specifically, run-to-run and day-to-day deposition rate reproducibility of better than 2 % for three consecutive days is demonstrated.

• 한국세라믹학회지
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• 제29권12호
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• pp.990-996
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• 1992

Chemical vapor deposition of ATO from SnCl4-SbCl5-H2O gas mixture was investigated with thermodynamic and experimental analyses. Electrical conductivity of the ATO film was much improved under deposition conditions of low input-gas ratio, Psbcl5/Psbcl4. This increase of the conductivity was attributed to donor electrons produced mainly by the pentavalent Sb ions in SnO2 lattice. However high input-gas ratio conditions produced an ATO film consisting of a mixture of SnO2 and very fine Sb2O5 phase. It was found that the deterioration of electrical conductivity and optical transmission of the film was caused by the deposition of fine Sb2O5 phase in the SnO2 matrix.

• 한국세라믹학회지
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• 제44권3호
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• pp.142-146
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• 2007

High-quality one-dimensional GaN nanorods and nanowires were synthesized on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffraction, scanning and transmission electron microscopy, and photoluminescence techniques. Full substrate coverage of densely packed, uniform, straight and aligned one-dimensional GaN nanowires with a diameter of 80nm were grown at $700{\sim}900^{\circ}C$. The X-ray diffraction patterns, transmission electron microscopic image, and selective area electron diffraction patterns indicate that the one-dimensional GaN nanostructures are a pure single crystalline and preferentially oriented in the [001] direction. We observed high optical quality of GaN nanowires by photoluminescence analysis.

• 한국염색가공학회지
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• 제1권1호
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• pp.63-68
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• 1989

It has been attempted to improve the anti-static property of Nylon 6 by means of Vapor-phase polymerization of thiophene in Nylon 6/PVA blend films impregnated with aluminium chloride as an oxident. After Polymerization of thiophene for two hours in Nylon 6/PVA blend films the conductivity increased from $10^{-12}-10^{-13}S/cm\;to\;10^{-5}-10^{-7}$S/cm, and the conductivity of composite films increased with increasing the concentration of aluminium chloride, the content of PVA annd polymerization time of thiophene. Polythiophene introduced in Nylon 6/PVA blend films has been confirmed by FT-IR spectra and scanning electron micrographs.