• Journal of Environmental Science International
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• 제16권12호
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• pp.1325-1335
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• 2007

The utility of soil-gas surveys is directly proportional to their accuracy in reflecting and representing changes in the subsurface concentrations of source compounds. Passive soil-gas vapor-phase is merely a fractional trace of the source, so, as a matter of convenience, the units used in reporting detection values from EMFLUX surveys are smaller than those employed for source-compound concentrations. According to the Leaking Underground Storage Tank(LUST) Program Annual Report, approximately 16 U.S. million dollars were spent for environmental site investigations at over 1,600 Underground Storage Tank(UST) sites and approximately over 1,000 acres of land was characterized and remediated in the State of Illinois in the year of 2003 alone. The main purpose of this study is to propose an idea to significantly reduce the site investigation cost by utilizing a passive soil-gas survey and conventional intrusive drilling method and to fully define the three dimensional characteristics of subsurface contamination from two industrial drycleaning facilities.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.721-725
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• 1996

The microfabricated test structures were used in order to evaluate the stress characteristics in films. The test structures were fabricated using surface micromachining technique, including HF vapor phase etching as an effective release method. The fabricated structures were micro strain gauge, cantilever-type vernier gauge and bridge for stress measurement, and cantilever for stress gradient measurement. The strain was measures by observing the deformation of the structures occurred after release etching and the amount of deformation can be detected by micro vernier gauge, which has gauge resolution of 0.2${\mu}{\textrm}{m}$. The detection principles and the degree of precision for the measured strain were also discussed. The characteristics of residual stress in LPCVD polysilicon films were studied using these test structures. The stress gradient due to the stress variation through the film thickness was calculated by measuring the deflection at the cantilever free end.

• Proceedings of the Optical Society of Korea Conference
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• 한국광학회 2003년도 제14회 정기총회 및 03년 동계학술발표회
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• pp.200-201
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• 2003

여러 가지 원소의 동위원소 성분 분석은 생물학, 화학, 환경학, 연대학, 기후학 연구에 있어서 중요한 정보를 제공하는 유용한 수단이다. 그 중에서도 수소, 산소, 그리고 탄소 동위원소 성분비의 정밀한 측정은 지구의 기후 변화 연구 등에 필수적인 수단이며, 가깝게는 식음료의 원산지 및 품질 확인에 이르기까지 다양하게 응용되고 있다 대표적으로 활용되고 있는 예를 보면 다음과 같다. 1. Authenticity Control and Detection of Adulteration： 쥬스류에 첨가제를 사용했는지의 여부를 확인할 수 있고, 포도주의 진품 여부를 확인할 수 있으며 원산지 확인도 가능하다. (중략)

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.21-23
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• 1997

Dependences of total photoyields on incident photon energies were measured using synchrotron radiation light for different chemical-vapor-deposited diamond with differently treated surface. Results show that a considerable amount of gap states are presented for as-grown specimens with H-terminated, that negative electron affinity (NEA) is realized for H-plasma-treated specimens, and that sufficient O-treatment to NEA specimens results in positive electron affinity. The observed electron affinity can be explained in terms of differences in strength of the surface dipole layer formed by difference in the electron negativity among C, H and O atoms.

• Journal of the Semiconductor & Display Technology
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• 제19권2호
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• pp.16-21
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• 2020

How accurately reproducible energy is delivered to the wafer in the process of making thin films using PE-CVD (Plasma enhanced chemical vapor deposition) during the semiconductor process. This is the most important technique, and most of the reaction on the wafer surface is made by thermal energy. In this study, we studied the method of monitoring the change of thermal energy transferred to the wafer surface by monitoring the temperature change according to the change of the thin film formed on the showerhead facing the wafer. Through this research, we could confirm the monitoring of wafer thin-film which is changed due to abnormal operation and accumulation of equipment, and we can expect improvement of semiconductor quality and yield through process reproducibility and equipment status by real-time monitoring of problem of deposition process equipment performance.

• Journal of Sensor Science and Technology
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• 제14권5호
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• pp.357-361
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• 2005

Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.

• Journal of the Optical Society of Korea
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• 제16권4호
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• pp.325-330
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• 2012

Differential absorption LIDAR (DIAL) is frequently used for atmospheric gas monitoring to detect impurities such as nitrogen dioxide, sulfur dioxide, iodine, and ozone. However, large differences in the on- and off-line laser wavelengths can cause serious errors owing to differential aerosol scattering. To resolve this problem, we have developed a new DIAL system for iodine vapor measurements in particular. The suggested DIAL system uses only one laser under seeded and unseeded conditions. To check the detection-sensitivity and error effects, we compared the results from a system using two seeded lasers with those from a system using a seeded and an unseeded laser. We demonstrate that the iodine concentration sensitivity of our system is improved in comparison to the conventional two seeded or two unseeded laser combinations.

• Mass Spectrometry Letters
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• 제12권1호
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• pp.26-30
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• 2021

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

• Journal of the Korean Society for Heat Treatment
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• 제24권2호
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• pp.87-91
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• 2011

Single layer Sn doped $In_2O_3$ (ITO) films and ITO 50 nm / Au 10 nm / ITO 40 nm (IAI) multilayer films were prepared with electron beam assisted magnetron sputtering on glass substrates. The effects of the Au interlayer, post-deposition atmosphere annealing and intense electron irradiation on the methanol gas sensitivity were investigated at room temperature. As deposited ITO films did not show any diffraction peaks in the XRD pattern, while the IAI films showed the diffraction peak for $In_2O_3$ (400). In this study, the gas sensitivity of ITO and IAI films increased proportionally with the methanol vapor concentration and an intense electron beam irradiated IAI film shows the higher sensitivity than the others film. From the XRD pattern, it is supposed that increased crystallization promotes the gas sensitivity. This approach is promising in gaining improvement in the performance of IAI gas sensors used for the detection of methanol vapor at room temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.137-137
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• 2003

Conducting PPy/PVA composite and pure PPy gas sensors were prepared by in-situ vaporstate polymerization method in a vaporization chamber under N2 condition, by exposing the pre-coated electrode with PVA/FeC13 to distilled pyrrole monomer. The various electrical sensing behaviors of both types of sensors were systematically investigated by a flow measuring system including mass flow controller (MFC) and bubbling bottle. The FT-Raman spectroscopy of vapor state polymerized PPy was identical to that of chemically polymerized PPy, confirming the same chemical structure. Both types of sensors had positive sensitivity when exposed to methanol gas. The sensitivity varied linearly with gas concentration in the range of 50ppm to 1059ppm. The detection limit of PPy/PVA sensor was believed to be as low as 10ppm. The sensitivity of PPy/PVA composite sensor was higher than that of pure PPy sensor. Both the response time and recovery time of PPy/PVA composite sensors were longer than those of pure PPy sensors. The thickness of the sensing film affected the sensitivity this way that the sensor having thinner film had higher sensitivity, indicating that the resistance of polymer film involved in the sensing behavior was bulk resistance rather than surface resistance. The reproducibility of PPy/PVA composite sensor was excellent during eight on-off cycles by switching between N2 and 3000ppm methanol gas. The sensitivity of PPy/PVA composite sensor was only maintained for two weeks, while the sensitivity of pure PPy sensor was maintained over two months.