• The Bulletin of The Korean Astronomical Society
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• v.41 no.2
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• pp.64.3-65
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• 2016

The NISS (Near-infrared Imaging Spectrometer for Star formation history) is the near-infrared instrument optimized to the Next Generation of small satellite series (NEXTSat). The capability of both imaging and low spectral resolution spectroscopy in the near-infrared range is a unique function of the NISS. The major scientific mission is to study the cosmic star formation history in local and distant universe. For those purposes, the main observational targets are nearby galaxies, galaxy clusters, star-forming regions and low background regions. The off-axis optical design is optimized to have a wide field of view ($2deg.{\times}2deg.$) as well as the wide wavelength range from 0.95 to $3.8{\mu}m$. Two linear variable filters are used to realize the imaging spectroscopy with the spectral resolution of ~20. The mechanical structure is considered to endure the launching condition as well as the space environment. The compact dewar is confirmed to operate the infrared detector as well as filters at 80K stage. The electronics is tested to obtain and process the signal from infrared sensor and to communicate with the satellite. After the test and calibration of the engineering qualification model (EQM), the flight model of the NSS is assembled and integrated into the satellite. To verify operations of the satellite in space, the space environment tests such as the vibration, shock and thermal-vacuum test were performed. Here, we report the test results of the flight model of the NISS.

• Applied Chemistry for Engineering
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• v.24 no.3
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• pp.219-226
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• 2013

Organic semiconductor-based soft electronics has potential advantages for next-generation electronics and displays, which request mobile convenience, flexibility, light-weight, large area, etc. Organic field-effect transistors (OFET) are core elements for soft electronic applications, such as e-paper, e-book, smart card, RFID tag, photovoltaics, portable computer, sensor, memory, etc. An optimal multi-layered structure of organic semiconductor, insulator, and electrodes is required to achieve high-performance OFET. Since most organic semiconductors are self-assembled structures with weak van der Waals forces during film formation, their crystalline structures and orientation are significantly affected by environmental conditions, specifically, substrate properties of surface energy and roughness, changing the corresponding OFET. Organo-compatible insulators and surface treatments can induce the crystal structure and orientation of solution- or vacuum-processable organic semiconductors preferential to the charge-carrier transport in OFET.

• The Bulletin of The Korean Astronomical Society
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• v.42 no.1
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• pp.40.1-40.1
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• 2017

The NISS (Near-infrared Imaging Spectrometer for Star formation history) is the near-infrared spectro-photometric instrument optimized to the Next Generation of small satellite series (NEXTSat). To achieve the major scientific objectives for the study of the cosmic star formation in local and distant universe, the spectro-photometric survey covering more than 100 square degree will be performed. The main observational targets will be nearby galaxies, galaxy clusters, star-forming regions and low background regions. The off-axis optics was developed to cover a wide field of view ($2deg.{\times}2deg.$) as well as the wide wavelength range from 0.95 to $2.5{\mu}m$, which were revised based upon the recent test and evaluation of the NISS instrument. The mechanical structure were tested under the launching condition as well as the space environment. The signal processing from infrared sensor and the communication with the satellite were evaluated after the integration into the satellite. The flight model of the NSS was assembled and integrated into the satellite. To verify operations of the satellite in space, the space environment tests such as the vibration, shock and thermal-vacuum test were performed. The accurate calibration data were obtained in our test facilities. Here, we report the test results of the flight model of the NISS.

• Journal of Korea Society of Industrial Information Systems
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• v.24 no.2
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• pp.33-40
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• 2019

Many companies have tried to develop wind power generators with a larger capacity, smaller size and lighter weight. High temperature superconducting (HTS) generators are more suitable for wind power systems because they can reduce volume and weight compared with conventional generators. However, the HTS generator has problems such as huge vacuum vessel and the difficulty of repairing the HTS field coils. These problems can be overcome through the modularization of the HTS field coil. The HTS module coil require a current leads (CLs) for deliver DC current, which causes a large heat transfer load. Therefore, CLs should be designed optimally for reducing the conduction and Joule heat loads. This paper deals with a structural design and thermal analysis of a module coil for a 750 kW-class HTS generator. The conduction and radiation heat loads of the module coils were analysed using a 3D finite element method program. As a result, the total thermal load was less than the cooling capacity of the cryo-cooler. The design results can be effectively utilized to develop a superconducting generator for wind power generation systems.

• Clean Technology
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• v.29 no.4
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• pp.237-243
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• 2023

Aerogel is the most excellent insulation material known to date, but it is inflexible and has very low strength. A blanket containing aerogel in a nonwoven fabric or fiber is currently the most practical form. However, aerogel blankets are not yet widely used because they cannot avoid dust generation when handled, lack flexibility, and can possibly deform. In this study, vacuum treatment, surface treatment, and composite materialization technology were applied to solve this problem, and some prototypes were also made. If an aerogel blanket is wrapped in an aluminum sheet, sealed at the four ends, and vacuumed, it can become a material with better insulation than the blanket itself. An aerogel molded body can be made by coating the aerogel blanket with resin and treating the surface. If the aerogel blanket is multi-packed and laminated with resin or fiber in multiple layers to make it a composite material, it can be used as a flexible insulation material. In particular, this composite material, which utilizes a Teflon membrane with controlled pores, is breathable and waterproof, so it can be used for clothing. Prototypes of insoles for winter boots and outdoor roll mats were also produced using aerogel blanket resin and fiber composites. These prototypes showed low thermal conductivity of less than 20 mW m^-1K^-1, with good flexibility and durability.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.66-72
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• 2009

The detection methods are required to monitor and diagnose the abnormality on the insulation condition inside a gas-insulated switchgear (GIS). Due to a good sensitivity to the products decomposed by partial discharges (PDs) in $SF_6$ gas, the development of a SWNT gas sensor is actively in progress. However, a few numerical studies on the diffusion mechanism of the $SF_6$ decomposition products by PD have been reported. In this study, we modeled $SF_6$ decomposition process in a chamber by calculating temperature, pressure and concentration of the decomposition products by using a commercial CFD program in conjunction with experimental data. It was assumed that the mass production rate and the generation temperature of the decomposition products were $5.04{\times}10^{-10}$ [g/s] and over 773 K respectively. To calculate the concentration equation, the Schmidt number was specified to get the diffusion coefficient functioned by viscosity and density of $SF_6$ gas instead rather than setting it directly. The results showed that the drive potential is governed mainly by the gradient of the decomposition concentration. A lower concentration of the decomposition products was observed as the sensors were placed more away from the discharge region. Also, the concentration increased by increasing the discharge time. By installing multiple sensors the location of PD is expected to be identified by monitoring the response time of the sensors, and the information should be very useful for the diagnosis and maintenance of GIS.

• Korean Chemical Engineering Research
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• v.61 no.3
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• pp.426-438
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• 2023

Lithium-sulfur batteries, recently attracting attention as next-generation batteries, have high energy density but are limited in application due to sulfur's insulating properties, shuttle phenomenon, and volume expansion. This study used an economical and simple vacuum filtration method to prepare a freestanding electrode without a binder and collector. Carbon nanotubes (CNTs) are used to improve the electrical conductivity of sulfur, where CNT also acts as both collector and conductor. In addition, metal oxides (MO_x, M=Ni, Mg), which are easy to adsorb lithium polysulfide, are added to the CNT/S electrode to suppress the shuttle reaction in lithium-sulfur batteries, which is a result of suppressing the loss of active sulfur material due to the excellent adsorption of lithium polysulfide by metal oxides. The MO_x@CNT/S electrode exhibited higher capacity characteristics and cycle stability than the CNT/S electrode without metal oxides. Among the MO_x@CNT/S electrodes, the NiO@CNT/S electrode displayed a high discharge capacity of 780 mAh g^-1 at 1 C and an extreme capacity decrease to 134 mAh g^-1 after 200 cycles. Although the MgO@CNT/S electrode exhibited a low discharge rate of 544 mAh g^-1 in the initial cycle, it showed good cycle stability with 90% of capacity retention up to 200 cycles. Further, to achieve high capacity and cycle stability, the Ni_0.7Mg_0.3O@CNT/S electrode, mixed with Ni:Mg in the ratio of 0.7:0.3, manifested an initial discharge rate of 755 mAh g^-1 (1 C) and a capacity retention rate of more than 90% after 200 cycles. Therefore, applying binary metal oxides to CNT/S provides a freestanding electrode for developing economical and high-performance Li-S batteries, effectively improving lithium polysulfide's high capacity characteristics and dissolution.