• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.278.1-278.1
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• 2013

Among the prerequisites for stable neural interfacing are the long-term stability of electrical performance of and the excellent biocompatibility of conducting materials in implantable neural electrodes. Reduced graphene oxide offers a great potential for a variety of biomedical applications including biosensors and, particularly, neural interfaces due to its superb material properties such as high electrical conductivity, decent optical transparency, facile processibility, and etc. Nonetheless, there have been few systematic studies on the graphene-based neural interfaces in terms of biocompatibility of electrode materials and long term stability in electrical characteristics. In this research, we prepared the primary culture of rat hippocampal neurons directly on reduced graphene oxide films which is chosen as a model electrode material for the neural electrode. We observed that the viability of primary neuronal culture on the present structure is minimally affected by nanoscale graphene flakes below. These results implicate that the multilayer films of reduced graphene oxides can be utilized for the next-generation neural interfaces with decent biocompatibility and outstanding electrical performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.256-256
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• 2013

Carbon nanotubes (CNT) / polyvinylidene fluoride (PVDF) piezoelectric composite films for nanogenerator devices were fabricated by spray coating method. When the CNT/PVDF mixture solution passes through the spray nozzle with small diameter by the compressed nitrogen gas, electric charges are generated in the liquid by a triboelectric effect. Then randomly distributed ${\beta}$ phase PVDF film could be re-oriented by the electric field resulting from the accumulated electrical charges, and might be resulted in extremely one-directionally aligned ${\beta}$ phase PVDF film without additional electric field for poling. X-ray diffraction patterns were used to investigate crystal structure of the CNT/PVDF composite films. It was confirmed that they revealed extremely large portion of the ${\beta}$ phase PVDF crystalline in the film. Therefore we could obtain the poled CNT/PVDF piezoelectric composite films by the spray coating method without additional poling process. Charge accumulation and resulting electric field generation mechanism by spray coating method were shown in Fig. 1. The capacitance of the CNT/PVDF films increased by adding CNTs into the PVDF matrix, and finally saturated. However, the I-V curves didn't show any saturation effect in the CNT concentration range of 0~4 wt%. Therefore we can control the performance of the devices fabricated from the CNT/PVDF composite film by adjusting the current level resulted from the CNT concentration with the uniform capacitance value.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.150.2-150.2
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• 2013

We elucidate the mechanism of the self-assembled organic layer formation at the organic/metal interface of hexaaza-triphenylene-hexacarbonitrile (HATCN)/Au(111) by first-principles calculations and Lowtemperature scanning tunneling microscope (STM). In this work, we used HATCN to deposit organic material which is well known as an efficient OLED charge generation material. Low-temperature STM measurements revealed that self-assembled hexagonal porous structure is formed at terraces of Au(111). We also found that the hexagonal porous structure has chirality and forms only small (<1000 $nm^2$) phaseseparated chiral domains that can easily change their chiral phase in subsequence STM images at 80 K. To explain the mechanism of these observation, we calculated the molecular-molecular and molecule-surface interaction energies by using density functional theory method. We found that the change of their chiral phase resulted from the competition between the two energies. These results have not only verified our experimental observations, but also revealed the delicate balance between different interactions that caused the self-assembed structures at the surface.

• Journal of the Korean Vacuum Society
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• v.22 no.4
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• pp.198-203
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• 2013

Energy harvesting refers to converting ambient energy from our surroundings, which would be otherwise wasted, into useful electrical energy. A triboelectric energy harvester is a self-charged device for harnessing mechanical energy based on a coupled process of contact charging and electrostatic induction. In this research, we demonstrate simple fabrication of prototype triboelectric energy harvester using soft lithography and its electrical characterization. Triboelectric generation occurs between the two micro patterned layers of Au and PDMS. A micro pattern is simply replicated directly from the bottom layer to the top layer using soft-lithography without an extra transfer process. This generator can produce an output voltage of 2 V and output current of 20 nA.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.148-148
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• 2010

GaN와 SiC 반도체는 band gap이 넓고 주파수 특성이 우수하여 미국, 유럽, 일본등 선진국에서는 기존의 GaAs나 InP에 이어 차세대 화합물 반도체 플랫폼(next generation compound semiconductor platform)으로서 연구개발 테마로 각광을 받고 있다. 미국의 경우 잘 알려진 국가 대형프로젝트인 WBGS-RF program (2003~2010, 7년)의 종료와 함께 새로운 NEXT program(2009~2014, 5년)을 지난 해 시작하였으며, 유럽은 KORRIGAN program (2005~2009, 5년)에서 연구개발된 기술에 대하여 후속인 MANGA program (2010~2014, 3.5년)을 통하여 GaN 반도체의 양산체제 구축을 위한 대형 연방 프로젝트를 시작하였다. 따라서 본 논문발표에서는 지난 10년 동안 그리고 향후 5년간 2014년까지 미국 국방성과 유럽연방 국방성에서 지원하고 있는 대형 국가 프로젝트인 GaN 전자소자 연구개발 프로그램과 연구개발 동향 분석을 통하여 대한민국이 나아가야 할 차세대 화합물 반도체 플랫폼인 GaN 전자소자의 연구개발 방향을 제시하고자 한다.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.82-86
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• 2024

With the growing field and growing interest in transparent organic light-emitting diodes (TOLED) in the industry, various attempts are being made to improve the transmittance and performance of TOLED. TOLEDs are expected to be used in next-generation displays such as mixture reality (MR) displays, displayable windows, televisions, etc. This study presents a mesh TOLED with better transmittance and luminescence characteristics than existing TOLEDs through an in-situ vacuum deposition method that does not require additional processes such as photolithography and etching. In this study the mesh TOLED's cathode consists of Mg: Ag 1:9 electrode. Mesh patterns are interconnected with a 6 nm layer of interlayer. We approached transmittance improvement up to 30% at 555 nm at the cathode electrode with similar current injection character, also we improved lumination characteristics up to 23% at 7 V driving condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.307.2-307.2
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• 2016

In this study, we synthesized Au nanoparticles (AuNPs) in polyacrylonitrile (PAN) thin films using a simple annealing process in the solid phase. The synthetic conditions were systematically controlled and optimized by varying the concentration of the Au salt solution and the annealing temperature. X-ray photoelectron spectroscopy (XPS) confirmed their chemical state, and transmission electron microscopy (TEM) verified the successful synthesis, size, and density of AuNPs. Au nanoparticles were generated from the thermal decomposition of the Au salt and stabilized during the cyclization of the PAN matrix. For actual device applications, previous synthetic techniques have required the synthesis of AuNPs in a liquid phase and an additional process to form the thin film layer, such as spin-coating, dip-coating, Langmuir-Blodgett, or high vacuum deposition. In contrast, our one-step synthesis could produce gold nanoparticles from the Au salt contained in a solid matrix with an easy heat treatment. The PAN:AuNPs composite was used as the charge trap layer of an organic nano-floating gate memory (ONFGM). The memory devices exhibited a high on/off ratio (over $10^6$), large hysteresis windows (76.7 V), and a stable endurance performance (>3000 cycles), indicating that our stabilized PAN:AuNPs composite film is a potential charge trap medium for next generation organic nano-floating gate memory transistors.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.1-136.1
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• 2015

In the present study, UHF (320 MHz) in combination with RF (13.56 MHz) plasmas was used for the synthesis of hydrogenated silicon nitride (SiNx:H) films by PECVD process at low temperature. RF/UHF hybrid plasmas were maintained at a fixed pressure of 410 mTorr in the N2/SiH4 and N2/SiH4/NH3 atmospheres. To investigate the radical generation and plasma formation and their control for the growth of the film, plasma diagnostic tools like vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and RF compensated Langmuir probe (LP) were utilized. Utilization of RF/UHF hybrid plasmas enables very high plasma densities ~ 1011 cm-3 with low electron temperature. Measurements using VUVAS reveal the UHF source is quite effective in the dissociation of the N2 gas to generate more active atomic N. It results in the enhancement of the Si-N bond concentration in the film. Consequently, the deposition rate has been significantly improved up to 2nm/s for the high rate synthesis of highly transparent (up to 90 %) SiNx:H film. The films properties such as optical transmittance and chemical composition are investigated using different analysis tools.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.139-139
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• 2010

Ionic Transition Metal Complex based (iTMC) Light-emitting electrochemical cells (LEECs) have been drawn attention for cheap and easy-to-fabricate light-emitting device. LEEC is one of the promising candidate for next generation display and solid-state lighting applications which can cover the defects of current commercial OLEDs like complicated fabrication process and strong work-function dependent sturucture. We have investigated the performance characteristics of LEECs based on poly (3, 4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS)-incorporated transition metal complex, which is tris(2, 2'-bipyridyl)ruthenium(II) hexafluorophosphate in this study. There are advantages using conductive polymer-incorporated luminous layer to prevent light disturbance and absorbance while light-emitting process between light-emitting layer and transparent electrode like ITO. The devices were fabricated as sandwiched structure and light-emitting layer was deposited approximately 40nm thickness by spin coating and aluminum electrode was deposited using thermal evaporation process under the vacuum condition (10-3Pa). Current density and light intensity were measured using optical spectrometer, and surface morphology changes of the luminous layer were observed using XRD and AFM varying contents of PEDOT:PSS in the Ruthenium(II) complex solution. To observe enhanced ionic conductivity of PEDOT:PSS and luminous layer, space-charge-limited-currents model was introduced and it showed that the performances and stability of LEECs were improved. Main discussions are the followings. First, relationship between film thickness and performance characteristics of device was considered. Secondly, light-emitting behavior when PEDOT:PSS layer on the ITO, as a buffer, was introduced to iTMC LEECs. Finally, electrical properties including carrier mobility, current density-voltage, light intensity-voltage, response time and turn-on voltages were investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.289.1-289.1
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• 2014

In this study, we made a organic thin film device in MIS(Metal-Insulator-Semiconductor) structure by using PVP (Poly vinyl phenol) as a insulating layer, and CdSe/ZnS nano particles which have a core/shell structure inside. We dissolved PVP and PMF in PGMEA, organic solvent, then formed a thin film through a spin coating. After that, it was cross-linked by annealing for 1 hour in a vacuum oven at $185^{\circ}C$. We operated FTIR measurement to check this, and discovered the amount of absorption reduced in the wave-length region near 3400 cm-1, so could observe decrease of -OH. Boonton7200 was used to measure a C-V relationship to confirm a properties of the nano particles, and as a result, the width of the memory window increased when device including nano particles. Additionally, we used HP4145B in order to make sure the electrical characteristics of the organic thin film device and analyzed a conduction mechanism of the device by measuring I-V relationship. When the voltage was low, FNT occurred chiefly, but as the voltage increased, Schottky Emission occurred mainly. We synthesized CdSe/ZnS and to confirm this, took a picture of Si substrate including nano particles with SEM. Spherical quantum dots were properly made. Due to this study, we realized there is high possibility of application of next generation memory device using organic thin film device and nano particles, and we expect more researches about this issue would be done.