• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.367-377
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• 2001

Plasma is generated by electrical discharge. Most plasma generation has been carried out at low-pressure gas typically less than one millionth of atmospheric pressure. Plasmas are in general generated from impact ionization of neutral gas molecules by accelerated electrons. The energy gain of electrons accelerated in an electrical field is proportional to the mean free path. Electrons gain more energy at low-pressure gas and generate plasma easily by ionization of neutrals, because the mean free path is longer. For this reason conventional plasma generation is carried out at low pressures. However, many practical applications require plasmas at high-pressure. In order to avoid the requirement for vacuum pumps, researchers in Korea start to develop plasmas in high-pressure chambers where the pressure is 1 atmosphere or greater. Material processing, environmental protection/restoration and improved energy production efficiency using plasmas are only possible for inexpensive bulk plasmas. We thus generate plasmas by new methods and plan to set foundations for new plasma technologies for $21^{st}$ / century industries. This technological research will play a central role in material processing, environmental and energy production industries.

• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.169-178
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• 2014

Fluid model based numerical analysis is done to simulate a low damage etch back system for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very high material selectivity. One possible mechanism is three steps: reactive radical generation, adsorption and thermal desorption. In this study, plasma generation and transport steps are analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + $CF_4$ ICP was used as a model and the effect of reactive gas inlet position was investigated in 2D and 3D. At 200~300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work well and generated higher density of F and $F_2$ radicals in the lower chamber region while suppressing ions reach to the wafer by a double layer conducting barrier.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.492-497
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• 2006

The study on laser-ablation plasmas has been strongly interested in fundamental aspects of laser-solid interaction and consequent plasma generation. In particular, this plasma has been widely used for the deposition of thin solid films and applied to the semiconductors and insulators. In this paper, we developed and discussed the generation of carbon ablation plasmas emitted by laser radiation on a solid target, graphite. The progress of carbon plasmas by laser-ablation was simulated using Monte-Carlo particle model under the pressures of vacuum, 1 Pa, 10 Pa and 66 Pa. At the results, carbon particles with low energy were deposited on the substrate as the pressure becomes higher However, there was no difference of deposition distributions of carbon particles on the substrate regardless of the pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.607-612
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• 1998

RF HPCVD(Helicon Plasma Chemical Vapor Deposition) has been successfully constructed for diamond thin films. The system consists of plasma generation tube, deposition chamber, pumping lines for gas system. A mixture of $CH_4 and H_2$is used for reaction. Two thermocouples, a quartz tube surrounded by a RF antenna and a magnet, and a high temperature heater were set up in the deposition chamber. The process for the thin film diamond deposition has been carried put in a high vacuum system at a substrate temperature of $800^{\circ}C$, and pressure of 5 mtorr. It is also demonstrated. that the RF HPCVD system has advantages for controlling deposition parameters easily.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.22 no.4
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• pp.715-722
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• 1998

A large electric system of a vacuum circuit breaker(VCB) has been studied for the electro-thermal analysis by finite element methods. Since the heat generation in VCB causes not only energy loss but deterioration of the VCB system with oxidization of parts, the overheating of the system must be prevented. For the analysis, a finite element formulation is derived for both electric analysis and thermal analysis that are coupled together. Two sets of formulations are uncoupled after finite dimensional approximation. First, the electric potential is obtained for the entire field and scaled to the given electric current. The electric field obtained is then used to calculate the heat generation in the VCB system including contacts and connections for the calculation of the temperature distribution in the entire domain. The finite element analysis is carried out to study the effect of shapes and locations of contacts and connections. From the results, the existing VCB has been modified to enhance its capacity with reduction of heat generation and temperature elevation.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.221-239
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• 2014

The global demand for energy has been increasing since past decades. Various technologies have been working to find a suitable alternative for the generation of sustainable energy. Photovoltaic technologies for solar energy conversion represent one of the significant routes for the green and renewable energy production. Despite of remarkable improvement in solar cell technologies, the generation of power is still suffering with lower energy conversion efficiency, high production cost, etc. The major problem in improving the PV efficiency is spectral mismatch between the incident solar spectrum and bandgap of a semiconductor material used in solar cell. Luminescent materials such as rare-earth doped phosphor materials having the quantum efficiency higher than unity can be helpful for photovoltaic applications. Quantum cutting phosphors are the most suitable candidates for the generation of two or more low-energy photons for the absorption of every incident high-energy photons. The phosphors which are capable of converting UV photon to visible and near-IR (NIR) photon are studied primarily for photovoltaic applications. In this review, we will survey various near IR quantum cutting phosphors with respective to their synthesis method, energy transfer mechanism, nature of activator, sensitizer and dopant materials incorporation and energy conversion efficiency considering their applications in photovoltaics.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.104-104
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• 2015

Due to the demand of the cold neutron flux in the neutron science and beam utilization technology, the cold neutron source (CNS) has been constructed and operating in the nuclear research reactor all over the world. The majority of the heat load removal scheme in the CNS is two-phase thermosiphon using the liquid hydrogen as a moderator. The CNS moderates thermal neutrons through a cryogenic moderator, liquid hydrogen, into cold neutrons with the generation of the nuclear heat load. The liquid hydrogen in a moderator cell is evaporated for the removal of the generated heat load from the neutron moderation and flows upward into a heat exchanger, where the hydrogen gas is liquefied by the cryogenic helium gas supplied from a helium refrigeration system. The liquefied hydrogen flows down to the moderator cell. To keep the required liquid hydrogen stable in the moderator cell, the CNS consists of an in-pool assembly (IPA) connected with the hydrogen system to handle the required hydrogen gas, the vacuum system to create the thermal insulation, and the helium refrigeration system to provide the cooling capacity. If one of systems is running out of order, the operating research reactor shall be tripped because the integrity of the CNS-IPA is not secured under the full power operation of the reactor. To prevent unscheduled reactor shutdown during a long time because the research reactor has been operating with the multi-purposes, the introduction of the standby cooling system (STS) can be a solution. In this presentation, the design considerations are considered how to design the STS satisfied with the following objectives: (a) to keep the moderator cell less than 350 K during the full power operation of the reactor under loss of the vacuum, loss of the cooling power, loss of common electrical power, or loss of instrument air cases; (b) to circulate smoothly helium gas in the STS circulation loop; (c) to re-start-up the reactor within 1 hour after its trip to avoid the Xenon build-up because more than certain concentration of Xenon makes that the reactor cannot start-up again; (d) to minimize the possibility of the hydrogen-oxygen reaction in the hydrogen boundary.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.5
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• pp.60-67
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• 2005

The superposed discharge type ozonizer of high ozone concentration using vacuum discharge tube has been designed and manufactured. It consists of three electrodes(central electrode, internal electrode, and external electrode) and one discharge gap(discharge gap between internal electrode and external electrode), is a superposed silent discharge type ozonizer for which the AC high voltages applied to the central electrode within discharge tube and the internal electrode has a $180{[^\circ]}$ phase difference and for which the external electrode is a ground. Ozone is generated by overlapping silent discharge between central electrode and external electrode, and silent discharge between internal electrode and external electrode. At the moment, discharge characteristics and ozone generation characteristics were investigated in accordance with vacuum of discharge tube, discharge power of ozonizer, and quantity of supplied oxygen gas. In consequence, high ozone concentration can be obtained 8840[ppm].

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.17-17
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• 1998

Synchrotron radiation is produced when charged particles moving with relativistic velocities a are accelerated - for example, deflected by the bending magnets which guide the electron or p positrons in circular accelerators or storage rings. By using special focusing magnetic lattices i in the particle accelerators it is possible to make the dimensions of the particle beam very small with a hi맹 charge density which results in a light source with high b디lIiance. Synchrotron light h has important properties which make it ideal for a wide range of investigations in surface s science. The fact that the spectrum of electromagnetic radiation emitted in a bending magnet e extends in a continuum from the 얹r infra red region to hard x-rays means that it is id않I for a v variety of spectroscopic studies. Since there are no convenient lasers, or other really bright l light sources, in the vacuum ultraviolet and soft x-ray re.밍ons the development of synchrotron r radiation has enabled enormous advances to be made in this di펌C비t spectr따 re밍on. P Polarization-dependent measurements, for ex없nple ellipsometry or circular dichroism studies a are possible because the radiation has a well-defined polarization - linear in the plane of orbit w with additional right-circular, or left-circular, components for emission an생es above, or below, t the horizontal, respectively. Since the synchrotron light is emitted from a bunch of charge c circulating in a ring the light is emitted with a well-defined time structure with a short flash of l light every time a bunch passes an exit port. The time structure depends on the size of the ring a and the number and sequence of filling of the bunches. A pulsed light source enables time¬r resolved studies to be performed which provide direct information on the lifetimes and decay m modes of excited states and in addition opens up the possibility of using time of flight t techniques for spectroscopic studies. The fact that synchrotron radiation is produced in a clean u ultrahi야 vacuum environment is of gr않t importance for surce science studies. The current t비rd generation synchrotron light sources provide exceptionally high baliance and stability a and open up possibilities for experiments which would have been inconceivable only a short time ago.