• 제목/요약/키워드: vacuum generation

검색결과 394건 처리시간 0.028초

Characterization and surface engineering of two-dimensional atomic crystals

  • 유영준
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.63.1-63.1
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    • 2015
  • The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, van der Waals (vdW) heterostructures using two dimensional (2D) atomic crystals such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have been attracted intensely. In particular, for high performance of vdW heterostructures device, ultraclean interface between stacked 2D atomic crystals should be guaranteed. In this talk, I will present fabrication and characterization of the vdW field effect transistors toward performance enhancement by employing TMDCs channel, h-BN insulating layer and graphene electrode. Furthermore, it will also be introduced the characterization and surface engineering of graphene for gas molecule sensor.

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고진공 운송계에서의 정밀 압력제어장치의 설게 및 성능시험 (Design and Performance Evaluation of the Precision Pressure Control System for the High Vacuum Transport Module)

  • Jang, W.I.;Jang, K.H.;Lee, J.H.
    • 한국정밀공학회지
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    • 제12권7호
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    • pp.92-98
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    • 1995
  • In the cluster tool, it is necessary to precisely control the vacuum pressure for the wafer transportation between transport module and cassette or process modules with the range of 1*10$^{-4}$ to 5*10$^{-5}$ torr. So we have designed the pressure control system for the transport module of the cluster tool and have evaluated its performance. Digital PID is utilized with the weighted sum of both three previous errors and one current error. The feedback signal is put into the nitrogen mass flow controller using the transport module controller. This pressure control system can prevent the transport module from the particle generation and backstreaming of hazardous process gases of the process chamber.

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Development and Test of ion Source with Small Orifice Cold Cathode

  • G. E. Bugrov;S. K. Kondranin;E. A. Kralkina;V. B. Pavlov;K. V. Vavilin;Lee, Heon-Ju
    • Journal of Korean Vacuum Science & Technology
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    • 제5권1호
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    • pp.19-24
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    • 2001
  • The paper represents the results of the development and the test of "cold cathode" ion source model with 5 cm aperture where the glow discharge is utilized for generation of electrons in the cathode of the ion source. The results of probe measurements of the ion source are represented. The integral parameters such as electron energy distribution function(EEDF), electron density and mean electron energy, discharge voltage-current characteristics, and distribution of ion beam were studied.

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세상에서 가장 얇은 그래핀 발광 소자 (The World's Thinnest Graphene Light Source)

  • 김영덕
    • 진공이야기
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    • 제4권3호
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    • pp.16-20
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    • 2017
  • Graphene has emerged as a promising material for optoelectronic applications including as ultrafast and broadband photodetector, optical modulator, and nonlinear photonic devices. Graphene based devices have shown the feasibility of ultrafast signal processing for required for photonic integrated circuits. However, on-chip monolithic nanoscale light source has remained challenges. Graphene's high current density, thermal stability, low heat capacity and non-equilibrium of electron and lattice temperature properties suggest that graphene as promising thermal light source. Early efforts showed infrared thermal radiation from substrate supported graphene device, with temperature limited due to significant cooling to substrate. The recent demonstration of bright visible light emission from suspended graphene achieve temperature up to ~3000 K and increase efficiency by reducing the heat dissipation and electron scattering. The world's thinnest graphene light source provides a promising path for on-chip light source for optical communication and next-generation display module.

도핑되지 않은 다결정 다이아몬드 박막의 전계방출기구 조사 (Investigation of field emission mechanism of undoped polycrystalline diamond films)

  • 심재엽;지응준;송기문;백홍구
    • 한국진공학회지
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    • 제8권4A호
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    • pp.417-424
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    • 1999
  • In order to investigate field emission mechanism of undoped polycrystalline diamond films, diamond films with different structural properties were deposited by varying positive substrate bias and/or $CH_4$ concentration. When increasing $CH_4$ concentration and positive substrate bias voltage, nondiamond carbon content in diamond films increased. Increase of nondiamond carbon content with increasing substrate voltage is ascribed to increase of substrate and excess generation of $CH_n$ radicals. Field emission properties of undoped polycrystalline diamond films ere significantly enhanced with increasing nondiamond carbon content. For diamond films with a small amount of nondiamond carbon, electrons are emitted through diamond surface while for the films with a large amount of nondiamond carbon, electron emission occurs through diamond bulk as well as surface. From this study, depending on nondiamond carbon content two field emission mechanisms were suggested.

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Plasma Synthesis of Silicon Nanoparticles for Next Generation Photovoltaics

  • Kim, Ka-Hyun;Kim, Dong Suk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.135.1-135.1
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    • 2014
  • Silicon nanoparticles can be synthesized in a standard radio-frequency glow discharge system at low temperature (${\sim}200^{\circ}C$). Plasma synthesis of silicon nanoparticles, initially a side effect of powder formation, has become over the years an exciting field of research which has opened the way to new opportunities in the field of materials deposition and their application to optoelectronic devices. Hydrogenated polymorphous silicon (pm-Si:H) has a peculiar microstructure, namely a small volume fraction of plasma synthesized silicon nanoparticles embedded in an amorphous matrix, which originates from the unique deposition mechanism. Detailed discussion on plasma synthesis of silicon nanoparticles, growth mechanism and photovoltaic application of pm-Si:H will be presented.

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CBD법을 이용한 고품질의 CdSe 양자점 합성 및 태양전지 응용

  • 최영우;설민수;김우석;용기중
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.461.2-461.2
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    • 2014
  • 양자점은 밴드갭을 조절할 수 있거나 multiple exciton generation등 과 같은여러가지 장점을 갖고 있어 양자점 감응형 태양전지에 대한 많은 연구가 진행되어왔다. 하지만 아직까지 이론적인 에너지 전환 효율에 비하여 낮은 효율을 보여주고 있다. 이러한 낮은 효율은 양자점과 전해질 계면에서의 defect나 surface state로 인한 전자-정공의 재결합으로 설명할 수 있다. 본 연구에서는 CdSe 양자점 합성법 중의 하나인 Chemical Bath Deposition의 전구체 농도조절을 통하여 고품질의 CdSe양자점을 합성하였다. 특정 농도에서 CdSe 양자점 표면에 생성되는 SeO2층을 억제하여 CdSe양자점/전해질 계면에서의 전하 재결합 저항을 높였고 가장 높은 에너지 전환 효율을 보여주었다.

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A Study on Optimal Dye-coating Conditions to Reduce Dye-adsorption Time with Improved DSSC Efficiency

  • 서영호;최은창;홍병유
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.481.1-481.1
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    • 2014
  • Dye-sensitized solar cell (DSSC) has been extensively investigated as the next generation energy source. Despite attractive features of simple fabrication process and its economical efficiency, there are some problems such as low efficiency and low long-term stability. Many groups have attempted the proposed way to improve the cell efficiency and long-term stability such as low recombination rate between $TiO_2$ surface and electrolyte, the development of new dye molecules capable of light adsorption as broadly as possible, the fabrication of a solid-state DSSC by replacing the liquid electrolyte, and protective coating on glass. In this work, we confirmed new dye-coating conditions to maximize the dye adsorption between the dye and $TiO_2$ nanoparticle surface. The experiment results coating conditions with the coating temperature of $70^{\circ}C$, the dye concentration of 10 mM and the coating time of 3 min. Conditions have two times, three times cycle the experiment in progress efficiency rises.

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Growth and Properties of p-type Transparent Oxide Semiconductors

  • Heo, Young-Woo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.99-99
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    • 2014
  • Transparent oxide semiconductors (TOSs) are. currently attracting attention for application to transparent electrodes in optoelectronic devices and active channel layers in thin-film transistors. One of the key issues for the realization of next generation transparent electronic devices such as transparent complementary metal-oxide-semiconductor thin-film transistors (CMOS TFTs), transparent wall light, sensors, and transparent solar cell is to develop p-type TOSs. In this talks, I will introduce issues and status related to p-type TOSs such as LnCuOQ (Ln=lanthanide, Q=S, Se), $SrCu_2O_2$, $CuMO_2$ (M=Al, Ga, Cr, In), ZnO, $Cu_2O$ and SnO. The growth and properties of SnO and Cu-based oxides and their application to electronic devices will be discussed.

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