• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2113-2115
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• 2000

It is necessary to install the arc generation facility in order to obtain the important technology for the design of breakers and switches, and for the improvement of their performance and reliability. With this facility, it is possible, to study the characteristics of Arc in air/gas/vacuum insulation environment. The facility briefly consists of capacitor bank which can charge enormous energy, an air-core reactor, experimental arc-chamber, and several measurement equipments. This facility can simulates the arc phenomena in breakers and switches by means of generating high currents. In order to study the arc phenomena in SF6 gas and vacuum and to test the quenching performance of the extinguishing chambers which are developing. we made experimental $SF_6$gas/vacuum chambers and measured several parameter's of chambers. And besides we visualized arc ignition and arc movement by means of high speed camera.

• 한국산학기술학회논문지
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• 제13권8호
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• pp.3618-3622
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• 2012

본 연구에서는 LCD 생산라인에서 장기적으로 정체상태에 있는 모듈의 수율을 높이고, 현재 TFT-LCD 생산공정에 필수적인 고압의 실리콘주입 장비 및 정밀 제어시스템을 개발하였다. 본 개발을 통하여 향후 본격생산을 준비중인 차세대 디스플레이 생산라인뿐만 아니라 중국으로 이전중인 LCD 생산 설비의 라인 환경에서 장비의 효율을 최대한 발휘함으로써 신규 투자비용을 최소화하고 최대의 효과를 창출할 수 있도록 세부 동작 시퀀스를 제어하기 위한 H/W와 S/W 시스템을 생산라인에 실장하였다. 또한, Fast-evacuating을 위한 Vacuum pump 구조를 제안하고 Pump control 회로 설계 및 실험을 통해 제품화하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.384-384
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• 2012

We report nonvolatile memory properties of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films grown by vapor phase polymerization using FeCl3 as an oxidant. Liquid-bridge-mediated transfer method was employed to remove FeCl3 for generation of pure PEDOT thin films. From the electrical measurement of memory device, we observed voltage induced bipolar resistive switching behavior with ON/OFF ratio of 103 and reproducibility of more than 103 dc sweeping cycles. ON and OFF states were stable up to 104 seconds without significant degradation. Cyclic voltammetry data illustrates resistive switching effect can be attributed to formation and rupture of conducting paths due to oxidation and reduction of PEDOT. The maximum current before reset process was found to be increase linearly with increase in compliance current applied during set process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.197-197
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• 2012

염료감응형 태양전지 (DSSC)는 다양한 태양전지 중, 가장 환경친화적이고, 생산단가도 낮을 뿐만 아니라 다양한 색상과 투광성을 확보할 수 있어 많은 연구가 진행되어왔다. 하지만 액체 전해질을 사용하는 기존 염료감응형 태양전지는 높은 휘발성과 열 팽창 수축에 따른 전해질 누액의 문제점으로 인하여 최근에는 고체전해질을 이용한 염료감응형 태양전지의 개발이 활발히 이루어지고 있다. 본 연구에서는 스크린 프린팅법을 이용하여 TiO2 광전극을 코팅하고 Mg(OH)2를 솔-젤법을 이용하여 스핀 코팅 하였다. 이후에 $500^{\circ}C$에서 1시간동안 열처리를 통해 MgO 나노 코팅막을 형성하여 고체 박막 태양전지(solid state dye sensitized solar cells)을 제작하였다. MgO 나노 코팅막의 특성은 솔라시뮬레이터를 이용하여 I-V 곡선, transient Voc, dark current를 측정하였고, UV0vis spectroscopy를 이용하여 염료흡착량을 분석하여 코팅막과 효율간의 상관관계를 평가하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.231-232
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• 2016

We have fabricated the nc-Si, IGZO based nonvolatile memory TFTs using mobile protons, which can be generated by simple hydrogen insertion process via H-NB treatment at room temperature. The TFT devices above exhibited reproducible hysteresis behavior, stable ON/OFF switching, and non-volatile memory characteristics. Also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and our modified H-NB CVD. The room temperature proton-insertion process can reveal flexible inorganic based all-in-one display panel including driving circuit and memory circuit.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.291.2-291.2
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• 2016

3D semiconductor material of silicon that is used throughout the semiconductor industry currently faces a physical limitation of the development of semiconductor process technology. The research into the next generation of nano-semiconductor materials such as semiconductor properties superior to replace silicon in order to overcome the physical limitations, such as the 2-dimensional graphene material in 2D transition-metal dichalcogenide (TMD) has been researched. In particular, 2D TMD doping without severely damage of crystal structure is required different conventional methods such as ion implantation in 3D semiconductor device. Here, we study a p-type doping technique on tungsten diselenide (WSe2) for p-channel 2D transistors by adjusting the concentration of hydrochloric acid through Raman spectroscopy and electrical/optical measurements. Where the performance parameters of WSe2 - based electronic device can be properly designed or optimized. (on currents increasing and threshold voltage positive shift.) We expect that our p-doping method will make it possible to successfully integrate future layered semiconductor devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.322-322
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• 2016

Phase change memory (PCM) has attracted much attention as one of the most promising candidates for next-generation nonvolatile memory. In that regard, the purposes of the study are to propose reference of effective pulse parameter to control phase switching operation and to invest the effect of nitrogen doped in PCM materials for improved cycling stability and economic energy consumption. Switching operation of PCM is affected by electric pulse parameter and as shown in figure.1 are composed to RT(rising time), ST(setting time), FT(falling time) and the effect of these parameter was precisely investigated. Transmission electron microscope (TEM) was used to confirm fine structure and retention cycle test was conducted to confirm reliability. Finally improvement reliability and economic power consumption in quantitatively are obtainable by optimum pulse parameter and nitrogen doping in GST material. these study is related to the engineering background of other semiconductor industries and it have confirmed to possibility further applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.400.2-400.2
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• 2016

Dye-sensitized solar cells (DSSCs) have been widely investigated as a next generation solar cell because of their simple structure and low manufacturing cost. To realize a commercially competitive technology of DSSCs, it is imperative to employ a technique to prepare nanocrystlline thin film on the flexible organic substrate, aiming at increasing the flexibility and reducing the weight as well as the overall device thickness of DSSCs. The key operation of glass-to-plastic substrates conversion is to prepare mesoporous TiO2 thin film at low temperature with a high surface area for dye adsorption and a high degree of crystallinity for fast transport of electrons. However, the electron transport in the TiO2 film synthesized at low temperature is very poor. So, in this study, TiO2 films synthesized at high temperature were transferred on the selective substrate. We fabricated DSSCs at low temperature using this method. So, we confirmed that the performance of DSSCs using TiO2 films synthesized at high temperature was improved.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.153-153
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• 2015

Application of the plasma is already highlighted as a new technology in the last few years. In these days, there are lots of attempt in various application with plasma in that it is known as an effective treatment to animal, plants, material and so on. Plasma in liquid, one of new plasma applications, has advantages in ability to treat bio-cell or solutions. For example, electro-surgery, water purification, radical generation and so on. Especially, plasma discharge in solutions is very useful technique and difficult to generate due to electrolysis, vaporization and something else. In this study, we have performed plasma discharge and checked sustainability of plasma in solution(saline 0.9%). And we have measured basic characteristics of plasma in liquid. Such as electrical energy and plasma density are calculated from discharging current and voltage. Also, its thermal energy is measured with IR camera.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.63.1-63.1
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• 2015

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, van der Waals (vdW) heterostructures using two dimensional (2D) atomic crystals such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have been attracted intensely. In particular, for high performance of vdW heterostructures device, ultraclean interface between stacked 2D atomic crystals should be guaranteed. In this talk, I will present fabrication and characterization of the vdW field effect transistors toward performance enhancement by employing TMDCs channel, h-BN insulating layer and graphene electrode. Furthermore, it will also be introduced the characterization and surface engineering of graphene for gas molecule sensor.