• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.189-194
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• 2011

Si-cell was prepared with various types owing to the etching times textured by the KOH etching solution. The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the $POCl_3$ and oxygen mixed precursor, and the metalization was done using by the Al back electrode and Ag front electrode. Textured Si surface was etched by the pyramid formation. The efficiency and the fill factor was increased in the Si-cell with a large size of pyramids, because of the series resistances decrease depending on the increasing of the photon absorbance. Increasing of the absorbance occurred the induction of the short current and open voltage, and then the efficiency was increased.

• Nuclear Engineering and Technology
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• v.43 no.2
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• pp.159-166
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• 2011

Si-rich-layer-coated U-7 wt%Mo plates were prepared in order to evaluate the diffusion barrier performance of the Si-rich layer in U-Mo vs. Al interdiffusion. Pure Si powder was used for coating the U-Mo plates by annealing at $900^{\circ}C$ for 1 h under vacuum of approximately 1 Pa. Si-rich layers containing more than 60 at% of Si were formed on U-7 wt%Mo plates. Diffusion couple tests were conducted in a muffle furnace at $560-600^{\circ}C$ under vacuum using Si-rich-layer-coated U-Mo plates and pure Al plates. Diffusion couple tests using uncoated U-Mo plates and Al-(0, 2 or 5 wt%)Si plates were also conducted for comparison. Si-rich-layer coatings were more effective in suppressing the interaction during diffusion couple tests between coated U-Mo plate and Al, when compared with U-Mo vs. Al-Si diffusion couples, since only small amounts of Al in the coating could be found after the diffusion couple tests. Si-rich-layer-coated U-7wt%Mo particles were also prepared using the same technique for U-7 wt%Mo plates to observe the microsturctures of the coated particles.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.9
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• pp.971-978
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• 2012

Vacuum carburizing is supposed to be the superior process to the gas carburizing. However, the vacuum carburizing has the stage in which hydrocarbon gas is supplied into the furnace to be pyrolysis, and consequently the stable heat treatment is hard to achieve due to the soot from the hydrocarbon pyrolysis. Recently, many studies have been made which utilize acetylene gas to overcome this defects. In this paper, the carburizing and the diffusion periods have been selected based on the Harris experimental formula, and the mechanical properties of the vacuum carburized specimen have been compared with those of the gas carburized SCM415H specimen to identify the feasibility of the $CO_2$ free vacuum carburizing process. The result showed that the vacuum carburized materials used have no oxidization of the grain boundaries, and show the 29.8% higher effective hardness depth and the acceptable tensile strength.

• Resources Recycling
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• v.32 no.1
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• pp.33-41
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• 2023

Herein, we selectively recovered Zn and produced ZnSO₄ from electric arc furnace dust using a hydrometallurgical process. The analysis of the properties of the electric arc furnace dust revealed that the Fe content (9.9%) was relatively low while the Mn content (19%) was high as compared to the composition of general dust. Therefore, an appropriate hydrometallurgical process was designed based on the properties of the raw materials. In the leaching process involving the use of 1.6 M sulfuric acid and 20% solid-liquid ratio at 60℃ for 1 h, 85% of the Zn and Mn got dissolved while the Fe was not leached. To selectively recover Zn, a solvent extraction process using D2EHPA as the extractant was chosen, and 99% of the Zn was extracted using 0.8 M D2EHPA with 32% saponification and an O/A ratio of 2 using counter-current 3-stage extraction. Mn was entirely scrubbed with an aqueous sulfuric acid solution of pH 1.5. Finally, Zn was concentrated and stripped using 1.5 M sulfuric acid at an O/A ratio of 4 using counter-current 4-stage stripping. The stripping solution contained 40 g/L of Zn, and 99.9% of ZnSO₄∙H₂O was obtained by vacuum distillation.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.382-386
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• 2002

We studied growth and characterization of $SrBi_2Ta_2O_9$ (SBT) thin films fabricated by low temperature process under vacuum and/or oxygen ambient. A metal organic decomposition (MOD) method based on a spin-on technique and annealing process using a rapid thermal annealing (RTA) method was used to prepare the SBT films. The crystallinity of a ferroelectric phase of SBT thin films is related to the oxygen partial pressure during RTA process. Under an oxygen partial pressure higher than 30 Torr, the crystallization temperature inducing the ferroelectric SBT phase can be lowered to $650^{\circ}C$. Those films annealed at $650^{\circ}C$ in vacuum and oxygen ambient showed good ferroelectric properties, that is, the memory window of 0.5~0.9 V at applied voltage of 3~7 V and the leakage current density of 1.80{\times}10^{-8}$ A/$\textrm{cm}^2$ at an applied voltage of 5V. In comparison with the SBT thin films prepared at 80$0^{\circ}C$ in $O_2$ ambient by furnace annealing process, the SBT thin films prepared at $650^{\circ}C$ in vacuum and oxygen ambient using the RTA process showed a good crystallization and electrical properties which would be able to apply to the virtul device fabrication precess.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.240.2-240.2
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• 2013

The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.

• Korean Journal of Materials Research
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• v.20 no.3
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• pp.125-131
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• 2010

In this study, Ti powders were fabricated from Ti scrap by the Hydrogenation-Dehydrogenation (HDH) method. The Ti powders were prepared from the spark plasma sintering (SPS) and their microstructure was investigated. Hydrogenation reactions of Ti scrap occurred at near $450^{\circ}C$ with a sudden increase in the reaction temperature and the decreasing pressure of hydrogen gas during the hydrogenation process in the furnace. The dehydrogenation process was also carried out at $750^{\circ}C$ for 2 hrs in a vacuum of $10^{-4}$ torr. After the HDH process, deoxidation treatment was carried out with the Ca (purity: 99.5%) at $700^{\circ}C$ for 2 hrs in the vacuum system. It was found that the oxidation content of Ti powder that was deoxidized with Ca showed noticeably lower values, compared to the content obtained by the HDH process. In order to fabricate the Ti compacts, Ti powder was sintered under an applied uniaxial punch pressure of 40 MPa in the range of $900-1200^{\circ}C$ for 5 min under a vacuum of $10^{-4}$ torr. The relative density of the compact was 99.5% at $1100^{\circ}C$ and the tensile strength decreased with increasing sintering temperature. After sintering, all of the Ti compacts showed brittle fracture behavior, which occurred in an elastic range with short plastic yielding up to a peak stress. Ti improved the corrosion resistance of the Ti compacts, and the Pd powders were mixed with the HDH Ti powders.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.3
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• pp.9-24
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• 1968

This report is concerned with the optimum design of hyper-aprupt p-n junctiea silion diode and fabriction of this diode usable for electrical tuning application. Impurity profile in the junction was assumed to clean exponential function. With this assunntion, an optimum criterion for designing standard AM radio tuning capacitor was derived. In the diffusion process, after aluminum and antimony as impurties were deposited in vacuum on a P-type silicon wafer, the diffusion was followed by loading the wafer into the high temperature furnace.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.285-289
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• 2018

We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.253-255
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• 2002

Since a butt Joint is smaller than a lap type joint, it is expected to have smaller AC losses. The butt joint is produced by the diffusion bonding of the contacting surface under pressured and heated condition. It is important to find robust joining conditions, because butt joint has small contact area and has the shape by which the quality of bonding is hard to be checked. In this research, the loading pressure is considered as the joining parameter to find optimum joining condition. The DC resistance of the joint may be changed by the surface pressure during joining process, because the superconducting strands near the contact surface are failed by large plastic deformation. The range from 10 MPa to 18 MPa is expected optimum surface pressure in the conditions of 1 hour heating time and $750^{\circ}C$ temperature in the vacuum furnace.