• 제목/요약/키워드: vacuum Co2

검색결과 805건 처리시간 0.046초

$Cd_{1-x}Co_xIn_2Se_4$ 결정의 XPS 분석 (XPS Analysis of $Cd_{1-x}Co_xIn_2Se_4$ Crystals)

  • 최성휴
    • 한국진공학회지
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    • 제3권3호
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    • pp.355-359
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    • 1994
  • Cd1-xCoxIn2Se4(X=0.50) 결정을 수직 Bridgman 방법으로 성장시키고 성장된 결정의 결정구조 및 XPS 특성을 연구하였다. 성장된 결정은 pseudocubic 구조이고 격자상수는 a=5.778$\AA$으로 주어졌다. Cd1-xCoxIn2Se4 결정의 각 성분원소인 cadmium cobalt indium 그리고 selenium에 대한 XPS spectrum으 로부터 결합에너지와 결합상태를 조사하였다. Cd1-xCoxIn2Se4결정과 결합하지 안는 각 성분원소인 cadium cobalt imdium 그리고 selenium에 대한 core level의 XPS spectrum과 비교하면 각 성분원소상 이의 결합에 의한 chemical shift 현상 때문에 core level의 결합에너지가 0.10~4.87 eV 차이가 있다. Cd1-xCoxIn2Se4 결정에서 Co 2P3/2 core level의 주 peak와 statellite peak와의 결합에너지 차이로부터 cadmium과 치화된 cobalt는 Co2+ ion으로 Td symmetry 점에 위치함을 알 수 있다.

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CO Oxidation Performances: Cu Oxides Versus Ni, Pd-TiO2@SiO2 Core-Shell Nanostructures

  • 나율이;조인수;손영구
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.663-663
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    • 2013
  • We prepared Cu oxides, and Ni and Pd-TiO2@SiO2 core-shellnanostructures, and tested their CO oxidation performances by temperature-programmed mass spectrometry. We found the starting temperatures of CO oxidation are around $200^{\circ}C$ and $300^{\circ}C$ for Ni and Pd-TiO2@SiO2 nanostructures, respectively. Cu oxides are cubes with 50~200 nm with, prepared with different concentrations of NaOH and ascorbic acid. For the core-shell structures, we prepared 100 nm SiO2 spheres, first coated the surface with TiO2 precursor, and then coated with Ni and Pd. Their characteristics are further examined by scanning electron microscopy, optical microscope, FT-IR, and UV-Vis absorption spectroscopy.

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Revisiting $H_2$ and CO Interactions with Pt(111) Surfaces

  • Kim, Je-Heon;Jo, Sam-K.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.203-203
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    • 2011
  • The importance of stepped single-crystal surfaces as model catalysts has been well recognized [1]. We re-investigated the adsorption properties of $H_2$ and CO, most important species in platinum-based catalysts, on nearly defect-free and highly stepped surfaces of one and the same Pt(111) crystal. While both being symmetric and single-peaked from the nearly defect-free surface, temperature-programmed desorption (TPD) spectra from the highly stepped surface saturated at 90 K with H and CO were triply- and doubly-peaked, respectively. Once pre-adsorbed, CO preempted step and then terrace sites, inhibiting the dissociative $H_2$ adsorption completely. Pre-adsorbed H inhibited the CO adsorption on terrace sites only, leaving defect sites intact for CO adsorption even at the saturation H precoverage. On defect-free Pt(111), while pre-adsorbed CO inhibited the dissociative $H_2$ adsorption completely, pre-adsorbed H could not inhibit the CO adsorption completely. These intriguing, but interesting results are discussed in terms of energetics/kinetics and the role of surface step sites in the dissociative adsorption of $H_2$ on Pt(111) [2].

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Vacuum SR Lithography with Using Plasma Polymerized Organo-silicon Resist

  • Morita, Shinzo;Vinogradov, Georgy;Senda, Kenji;Shao, Chunlim
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1994년도 제7회 학술발표회 및 한·일 CVD 심포지움 논문개요집
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    • pp.158.1-158
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    • 1994
  • Totally dry lithography is studying with using plasma polymerized resist for almost 15 years. Recently organo-silicon ITlOnOmer was proposed as a new resist. When the plasma polymerized resist was irradiated through a mask in oxygen gas, the resist was oxidized and a fine pattern of submicron was successfully developed by $Cl_2$ gas plasma.

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CO2 reforming of methane based on TiO2/Ni-based catalysts

  • Kim, Dong-Wun;Seo, Hyun-Ook;Kim, Kwang-Dae;Dey, Nilay Kumar;Kim, Myoung-Joo;Jeong, Myoung-Geun;Kim, Young-Dok
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.60-60
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    • 2010
  • CO2 reforming of methane (CRM) based on Ni catalysts was studied using temperature programmed reaction (TPR). The onset temperature of the CRM reaction was increased in a repeated TPR experiments. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy showed formation of graphite structures on Ni during CRM reaction, which deactivate Ni-surfaces. Attempts were made for inhibiting deactivation of Ni surfaces and reducing onset-temperature of the CRM reaction by various surface modification techniques, which will be presented in this poster.

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$Zn_{0.5}Mg_{0.5}Te$$Zn_{0.5}Mg_{0.5}Te:Co$ 단결정 성장과 열역학 함수 추정 (Growth and Thermodynamic Function Properties of Undoped and Co-doped $Zn_{0.5}Mg_{0.5}Te$ Single Crystals)

  • 김용근
    • 한국진공학회지
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    • 제3권2호
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    • pp.198-202
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    • 1994
  • Zn0.5Mg0.5Te 및 Zn0.5Mg0.5Te:Co 단결정을 온도진동법을 응용한 화학수송법으로 성장시켰고, 광 학적 energy gap의 온도의존성은 Varshni의형식에 잘 적용되었다. 광학적 energy gap의 온도의존성으 로부터 열역학 기본함수인 entropy, enthalpy, heat capacity를 구했다.

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Initial Growth Stage of $Y_2O_3$

  • Cho, M.H.;Whangbo, S.W.;Koh, W.S.;Whang, C.N.;Choi, S.C.;Kang, S.B.;Lee, S.I.;Lee, M.Y.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1997년도 제13회 학술발표회 논문개요집
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    • pp.158.1-158
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    • 1997
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실험 계획법을 이용한 진공 차단기의 동특성 최적화 (Dynamic Responses Optimization of Vacuum Circuit Breaker Using Taghchi Method)

  • 조준연;안길영;김성태;양홍익;김규정
    • 대한기계학회논문집 C: 기술과 교육
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    • 제3권2호
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    • pp.141-148
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    • 2015
  • 본 연구에서는 진공 차단기(Vacuum circuit breaker)의 동적 특성을 모사하기 위해 리커다인을 이용한 다물체 동역학 해석 모델이 개발 되었다. 진공 차단기는 VI(Vacuum interrupter)를 포함한 3 개의 주회로 부와, 구동 메커니즘을 포함한 기구부로 구성된다. 이 해석적 모델의 검증을 위해, 해석 결과와 실측을 통한 실험적 결과를 비교 하였다. 일반적으로, 원활한 사고 전류 차단을 위해서는 0.9~1.1m/s 의 차단속도(Opening velocity)가 필요하다. 차단 속도의 향상을 위해, 다구찌 기법을 이용하여 진공 차단기의 설계 변수 최적화를 수행하였다. 또한 향상된 차단기의 동적 특성을 검증하기 위해, 해석 결과와 개선된 샘플의 실험적 결과를 비교 분석 하였다.

Room Temperature Ferromagnetism on Co and Fe Doped Multi-wall Carbon Nano-tube

  • Chae, K.H.;Gautam, S.;Yu, B.Y.;Song, J.H.;Augustine, S.;Kang, J.K.;Asokan, K.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.171-171
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    • 2011
  • Co and Fe doped multi-wall carbon nano-tubes (MWCNTs) synthesized by microwave plasma enhanced chemical vapor deposition (PECVD) technique are investigated with synchrotron radiations at Pohang Light Source (PAL) and European Synchrotron Radiation Facility (ESRF). Near edge x-ray absorption spectroscopy (NEXAFS) measurement at C K, Co $L_{3,2}$ and Fe $L_{3,2}$-edges, and x-ray magnetic circular dichroism (XMCD) at Co and Fe $L_{3,2}$-edges have been carried at 7B1 XAS KIST and 2A MS beamline, respectively, to understand the electronic structure and responsible magnetic interactions at room temperature. X-ray absorption spectroscopy (XAS) at C K-edge shows significant p-bonding and Co and Fe L-edges proves the presence of $Co^{2+}$ and $Fe^{2+}$ in octahedral symmetry. Co and Fe doped MWCNTs show good XMCD spectra at 300K. The effect on the magnetism is also studied through swift heavy ion (SHI) radiations and magnetism is found enhanced and change in the electronic structure in Co-CNTs is investigated.

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Co-Si계의 동시증착과 고상반응시 상전이 및 $CoSi_2$ 층의 저온정합성장 (Phase sequence in Codeposition and Solid State Reaction of Co-Si System and Low Temperature Epitaxial Growth of $CoSi_2$ Layer)

  • 박상욱;심재엽;지응준;최정동;곽준섭;백홍구
    • 한국진공학회지
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    • 제2권4호
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    • pp.439-454
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    • 1993
  • The phase sequence of codeposited Co-Si alloy and Co/si multilayer thin film was investigated by differential scanning calormetry(DSC) and X-ray diffraction (XRD) analysis, The phase sequence in codeposition and codeposited amorphous Co-Si alloy thin film were CoSilongrightarrow Co2Si and those in Co/Si multilayer thin film were CoSilongrightarrowCo2Silongrightarrow and CoSilongrightarrowCo2Si longrightarrowCoSilongrightarrowCoSi2 with the atomic concentration ration of Co to Si layer being 2:1 and 1:2 respectively. The observed phase sequence was analyzed by the effectvie heat of formatin . The phase determining factor (PDF) considering structural facotr in addition to the effectvie heat of formation was used to explain the difference in the first crystalline phase between codeposition, codeposited amorphous Co-Si alloy thin film and Co/Si multilayer thin film. The crystallinity of Co-silicide deposited by multitarget bias cosputter deposition (MBCD) wasinvestigated as a funcion of deposition temperature and substrate bias voltage by transmission electron microscopy (TEM) and epitaxial CoSi2 layer was grown at $200^{\circ}C$ . Parameters, Ear, $\alpha$(As), were calculate dto quantitatively explain the low temperature epitaxial grpwth of CoSi2 layer. The phase sequence and crystallinity had a stronger dependence on the substrate bias voltage than on the deposition temperature due to the collisional daxcade mixing, in-situ cleannin g, and increase in the number of nucleation sites by ion bombardment of growing surface.

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