• Journal of Electrical Engineering and Technology
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• 제1권1호
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• pp.110-113
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• 2006

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The power supply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of $10\sim50$ kHz and $10\sim60%$, respectively. The deposition rate increased with rising incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This result shows higher deposition rate than any other previous work involving reactive sputtering in oxide mode. The thickness uniformities over the entire substrate area of $982mm{\times}563mm$ were observed at the processing pressure of $2.8\sim9.5$ mTorr. The thickness distribution was improved at lower pressure. This technique is proposed for application to a high through-put sputtering system for plasma display panels.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.109-113
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• 2020

A power device is a component used as a switch or rectifier in power electronics to control high voltages. Consequently, power devices are used to improve the efficiency of electric-vehicle (EV) chargers, new energy generators, welders, and switched-mode power supplies (SMPS). Power device designs, which require high voltage, high efficiency, and high reliability, are typically based on MOSFET (metal-oxide-semiconductor field-effect transistor) and IGBT (insulated-gate bipolar transistor) structures. As a unipolar device, a MOSFET has the advantage of relatively fast switching and low tail current at turn-off compared to IGBT-based devices, which are built on bipolar structures. A superjunction structure adds a p-base region to allow a higher yield voltage due to lower R_DS (on) and field dispersion than previous p-base components, significantly reducing the total gate charge. To verify the basic characteristics of the superjunction, we worked with a planar type MOSFET and Synopsys' process simulation T-CAD tool. A basic structure of the superjunction MOSFET was produced and its changing electrical characteristics, tested under a number of environmental variables, were analyzed.

• 대한의용생체공학회:의공학회지
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• 제23권6호
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• pp.477-484
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• 2002

A pacemaker autosense algorithm with dual thresholds. one for noise or tachyarrhythmia detection (noise threshold, NT) and the other for intrinsic beat detection (sensing threshold. ST), was developed to improve the sensing performance in single pass VDD electrograms. unipolar electrograms, or atrial fibrillation detection. When a deflection in an electrogram exceeds the NT (defined as 50% of 57), the autosense algorithm with dual thresholds checks if the deflection also exceeds the ST. If it does, the autosense algorithm calculates the signal to noise ratio (SNR) of the deflection to the highest deflection detected by NT but lower than ST during the last cardiac cycle. If the SNR 2, the autosense algorithm declares an intrinsic beat detection and calculates the next ST based on the three most recent intrinsic peaks. If the SNR $\geq$2, the autosense algorithm checks the number of deflections detected by NT during the last cardiac cycle in order to determine if it is a noise detection or tachyarrhythmia detection. Usually the autosense algorithm tries to set the 57 at 37.5% of the average of the three intrinsic beats, although it changes the percentage according to event classifications. The autosense algorithm was tested through computer simulation of atrial electrograms from 5 patients obtained during EP study, to simulate a worst sensing situation. The result showed that the ST levels for autosense algorithm tracked the electrogram amplitudes properly, providing more noise immunity whenever necessary. Also, the autosense algorithm with dual thresholds achieved sensing performance as good as the conventional fixed sensitivity method that was optimized retrospectively.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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• pp.20-20
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• 2000

Back-propagation neural network (BPNN) is the most prevalently used paradigm in modeling semiconductor manufacturing processes, which as a neuron activation function typically employs a bipolar or unipolar sigmoid function in either hidden and output layers. In this study, applicability of another linear function as a neuron activation function is investigated. The linear function was operated in combination with other sigmoid functions. Comparison revealed that a particular combination, the bipolar sigmoid function in hidden layer and the linear function in output layer, is found to be the best combination that yields the highest prediction accuracy. For BPNN with this combination, predictive performance once again optimized by incrementally adjusting the gradients respective to each function. A total of 121 combinations of gradients were examined and out of them one optimal set was determined. Predictive performance of the corresponding model were compared to non-optimized, revealing that optimized models are more accurate over non-optimized counterparts by an improvement of more than 30%. This demonstrates that the proposed gradient-optimized teaming for BPNN with a linear function in output layer is an effective means to construct plasma models. The plasma modeled is a hemispherical inductively coupled plasma, which was characterized by a 24 full factorial design. To validate models, another eight experiments were conducted. process variables that were varied in the design include source polver, pressure, position of chuck holder and chroline flow rate. Plasma attributes measured using Langmuir probe are electron density, electron temperature, and plasma potential.

• 한국재료학회지
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• 제22권8호
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• pp.385-389
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• 2012

Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using $MnO_x$ thin films. The $V_{set}$ of the as-grown $MnO_x$ film ranged from 1 to 6.2 V, whereas the $V_{set}$ of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an $MnO_x$ film leads to an increase in $Mn^{4+}$ content at the $MnO_x$ film surface with a subsequent change in the $Mn^{4+}/Mn^{3+}$ ratio at the surface. This was attributed to the change in $Mn^{4+}/Mn^{3+}$ ratios at the $MnO_x$ surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of $MnO_x$ thin films. In addition, crystalline $MnO_x$ can help stabilize the $V_{set}$ and $V_{reset}$ distribution in memory switching in a Ti/$MnO_x$/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and $MnO_x$.

• Journal of Power Electronics
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• 제16권6호
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• pp.2099-2108
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• 2016

The cascaded multilevel converter is widely adopted to medium/high voltage and high power electronic applications due to the small harmonic components of the output voltage and the facilitation of modularity. In this paper, the operation principle of a T-type H-bridge topology is investigated in detail, and a carrier phase shifted pulse width modulation (CPS-PWM) based control method is proposed for this topology. Taking a virtual five-level waveform achieved by a unipolar double frequency CPS-PWM as the output object, PWM signals of the T-type H-bridge can be obtained by reverse derivation according to its switching modes. In addition, a control method for the T-type H-bridge based cascaded multilevel converter is introduced. Then a single-phase T-type H-bridge cascaded multilevel static var generator (SVG) prototype is built, and a repetitive controller based compound current control strategy is designed with the DC-link voltage balancing control scheme analyzed. Finally, simulation and experimental results validate the correctness and feasibility of the proposed modulation method and control strategy for T-type H-bridge based cascaded multilevel converters.

• 한국통신학회논문지
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• 제25권7A호
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• pp.986-993
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• 2000

In this paper, we analyze transmission characteristics of ultrashort laser pulses using the properties of high-order pulses which are systematically obtained following their orders. The high-order pulses are easily derived from a modified PRS system model. But we make clear they are very useful to cover wider area and to show more accurate transmission characteristics of ultrashort pulses than Gaussian or Sech pulse approximations used conventionally. These are based on the fact that the spectra and bandwidths of the high-order pulses are geautifully related to their orders. First modifying the generalized PRS system model, we propose a new model for deriving any type of high-order pulse. And we offer a novel analysis method of ultrashort pulse transmission varying the order of the pulse from n=1 to n=100, we obtain spectra of ultrashort pulses with 1(ps)∼150(fs) FWHM's, which are widely used in optical pulse communications. One-step further, we derive PSD's of their pulse-tr ins when they are applied to Unipolar signaling scheme. These PSD's are decided in the range of possible pulse intervals. All of these results are not only coincided with some conventional experimental works but will be applied to any pioneering ultrashort pulse in the future.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 A
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• pp.196-199
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• 1998

LDM(Linear DC Motor) are used in high speed, high-precision position control system. Because of these advatages, LDM has already used in the motor of pen-recorder, magnetic-disk devices. Under the limited dimension, we propose the design method of LDM by magnetic circuit. In this paper, a relation between the thrust constant and size of a LDM that is moving coil type with unipolar is described, which is defined as a simple relational equation. To maximize the rate of thrust to the volume of LDM, the magnetic flux density in the yoke is adjusted to the value of magnetic equation. By the magnetic field analysis(FEM), the validity of the equation is confirmed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 A
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• pp.224-227
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• 1998

Linear motors are increasingly employed as direct actuators replacing the more conventional systems composed by a rotating motor and a mechanical device. Linear DC motor is useful in a high speed and high accuracy positioning system with a feedback controller. Because of these advantages, linear DC motors have already been used as motors of pen recorders and magnetic disk storage devices, these are moving coil type linear DC motors as these movers are light. Moving magnet type linear DC motor has advantages at long stroke motors because its mover's feeding wires for driving is not necessary. This paper is concerned with the analysis of linear DC motor that is moving magnet type with unipolar. In order to analyze the dynamic behaviour a mathematical model based on a simplified field analysis developed. A two dimensional finite element field solution is employed in order to illustrate the effect of yoke saturation and motor performance. It is deduced the relation between the limit value of the thrust of the linear DC motor and the dimension of the yokes.

• 세라미스트
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• 제3권1호
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• pp.45-52
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• 2000

전자싸이클로트론공명플라즈마 화학기상증착법(ECR-PECVD)에 의한 Pt 및 $RuO_2$ 기판에서의 PZT 박막의 증착특성 및 전기적 특성을 조사하였다. $RuO_2$ 기판에서는 Pt 기판에 비하여 Pb-관련 이차상이 형성되기 쉬웠고, PZT 페로브스카이트 핵생성이 어려웠다. 하지만, $RuO_2$ 기판에서도 금속유기 원료기체의 정확한 유량조절(특히, $Pb(DPM)_2$ 유량)과 Ti-oxide 씨앗층의 도입을 통하여 $450^{\circ}C$의 비교적 낮은 증착온도에서 단일한페로브스카이트 박막 제조가 가능하였으며, $RuO_2$ 기판에서도 미세구조가 향상된 PZT 박막의 경우 $10^{-6}A/cm^2@100kV/cm$의 우수한 누설전류 특성을 나타내었다. 4 가지 전극배열의 PZT 커패시터들 중에서 $RuO_2//RuO_2$ 커패시터는 누설전류밀도가 $10^{-4}A/cm^2@100kV/cm$ 정도로 높았지만, 피로현상은 나타나지 않았다. 일방향 전계 (unipolar) 피로특성에서 나타난 polarization-shift 현상과 양방향 전계 (bipolar) 피로특성의 온도의존성 결과는 PZT 박막내 charged defect의 이동이 어려움을 나타내었다. Bipolar 신호에 의한 피로현상은 인가전계에 의한 분극반전 과정에서 Pt 계면에서 charged defect의 형성과 관련이 있는 것으로 판단되었다. 또한, 상하부 전극물질 이 다른 경우에는 상하부 계면의 charged defect 밀도에 차이가 생겨 내부전계가 형성되는 것으로 판단되었다.