• Title/Summary/Keyword: uniform resistivity

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A Study on the Identification of Equivalent Uniform Soil Model for Grounding Design of 500[tV] Transmission Towers (500[kV] 송전철탑 접지설계를 위한 다층토양구조의 균일매질 등가화에 관한 연구)

  • Choi, Jong-Kee;Lee, Sung-Doo;Lee, Dong-Il;Jung, Gil-Jo;Kim, Kyung-Chul
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.19 no.6
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    • pp.22-28
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    • 2005
  • The electrical characterstic of earth is the most dominant factor for grounding design and an earth is typically represented by a uniform medium with the specific earth resistivity, which is unique for a specific site. For a hand-working grounding design using a specific earth resistivity requires a process converting a real earth of complex medium into a simple uniform medium In this paper, we suggest a procedure to convert a multi-layered earth s into a simpler uniform earth for grounding design of Myanmar 500[kV] transmission towers.

H-Polarized Scattering by a Resistive Strip Grating with Zero Resistivity at Strip-Edges Over a Grounded Dielectric Plane (접지된 유전체 평면위의 스트립 양끝에서 0 저항율을 갖는 저항띠 격자구조에 의한 H-분극 산란)

  • Yoon, Uei-Joong
    • Journal of Advanced Navigation Technology
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    • v.15 no.3
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    • pp.349-354
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    • 2011
  • In this paper, H-polarized scattering problems by a resistive strip grating with zero resistivity at strip-edges over a grounded dielectric plane according to the strip width and grating period, the relative permittivity and thickness of a dielectric layer, and incident angles of a transverse electric (TE) plane wave are analyzed by applying the Fourier-Galerkin Moment Method (FGMM). The tapered resistivity of resistive strips has zero resistivity at strip edges, then the induced surface current density on the resistive strip is expanded in a series of Chebyshev polynomials of the second kind as a orthogonal ploynomials. The sharp variations of the reflected power are due to resonance effects were previously called wood's anomallies, the numerical results for the reflected power are compared with those of uniform resistivity in the existing papers.

Electrical Resistivity Response Due to the Variation of Embankment Shape and Reservoir Level (제체형태와 수위에 따른 전기비저항 반응 연구)

  • Oh, Seok-Hoon
    • Geophysics and Geophysical Exploration
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    • v.11 no.3
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    • pp.214-220
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    • 2008
  • The distortion effect of electrical response for two-dimensional (2-D) DC resistivity method was verified in terms of 2-D inversion result of synthetic data obtained by three-dimensional (3-D) modeling, which is frequently applied to assess the safety of center core-type fill dam structure. The distortion effect is due to 2-D interpretation for 3-D structure. By the modeling analysis, we found that the water level is correctly described in the resistivity section around the middle part rather than each end side of the embankment due to the 3-D terrain effect, when the material of the embankment is assumed as horizontally uniform. And when we set the slope of outer rock fill part as uniform. the sharper the slope of the center core is, the more similar the resistivity section reflects. On the other hand, when the slope of the rock fill is steep, the resistivity section shows the water level at lower position than the real one, and the 3-D distortion effect at the end side of the embankment was enhanced.

High resistivity Czochralski-grown silicon single crystals for power devices

  • Lee, Kyoung-Hee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.4
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    • pp.137-139
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    • 2008
  • Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

A study on the factors affecting Cu(Mg) alloy resistivity (Cu(Mg) alloy의 비저항에 영향을 미치는 인자에 대한 연구)

  • 조흥렬;조범석;이재갑;박원욱;이은구
    • Journal of the Korean institute of surface engineering
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    • v.32 no.6
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    • pp.695-702
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    • 1999
  • We have explored the factors affecting the resistivity of Cu (Mg) alloy, which was prepared by sputtering. The results show that the resistivity is a function of Mg content, annealing temperature, annealing time, and Cu-alloy thickness. Addition of Mg to copper increases the resistivity through solute scattering. In addition, increasing Mg content promotes the interfacial reaction between Mg and SiO$_2$ to produce the free silicon and the generated free silicon dissolves into copper, resulting in a significant increase of resistivity. Furthermore, increasing oxidation temperature rapidly decreases the resistivity at the initial stage of oxidation and then continues to increase the resistivity to the saturation value with increasing oxidation time. The saturation value depends on the residual Mg content and the thickness of the alloy. TEM and AES analyses reveal that dense, uniform MgO grows to the limiting thickness of about $150\AA$. However, interfacial MgO does not show the limiting thickness, instead continues to grow until Mg is completely exhausted. From these facts, we proposed the maximum available Mg content needed to from the dense MgO on the surface and suppress the excessive interfacial reaction.

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Nondestructive Damage Sensitivity of Carbon Nanotube and Nanofiber/Epoxy Composites Using Electro-Micromechanical Technique and Acoustic Emission (Electro-Micromechanical 시험법과 음향방출을 이용한 탄소 나노튜브와 나노섬유 강화 에폭시 복합재료의 비파괴적 손상 감지능)

  • Kim, Dae-Sik;Park, Joung-Man;Lee, Jae-Rock;Kim, Tae-Wook
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2003.04a
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    • pp.117-120
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    • 2003
  • Electro-micromechanical techniques were applied using four-probe method for carbon nanotube (CNT) or nanofiber (CNF)/epoxy composites with their content. Carbon black (CB) was used to compare with CNT and CNF. The fracture of carbon fiber was detected by nondestructive acoustic emission (AE) relating to electrical resistivity for double-matrix composites test. Sensing for fiber tension was performed by electro-pullout test under uniform cyclic strain. The sensitivity for fiber damage such as fiber fracture and fiber tension was the highest for CNT/epoxy composites, and in CB case they were the lowest compared with CNT and CNF. Reinforcing effect of CNT obtained from apparent modulus measurement was the highest in the same content. The results obtained from sensing fiber damage were correlated with the morphological observation of nano-scale structure using FE-SEM. The information on fiber damage and matrix deformation and reinforcing effect of carbon nanocomposites could be obtained from electrical resistivity measurement as a new concept of nondestructive evaluation.

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Grain growth of the PTC thermistor according to the soaking temperature (PTC 서어미스타 소자의 소성온도에 따른 Grain의 성장상태)

  • 박창엽;이영희
    • 전기의세계
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    • v.31 no.6
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    • pp.437-444
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    • 1982
  • Although several kinds of conduction mechanism of PTC thermistor have been reported, there were few satisfying results. In this paper, the reported conduction mechanism theories were scrutinized and analyzed by using the experimental results. PTC thermistors for this study were manufactured by adding Sb$\_$2/O$\_$3/, AI$\_$2/O$\_$3/, TiO$\_$2/, and SiO$\_$2/ to BaTiO$\_$3/, and by sintering it at different temperatures. In order to analyze the conduction mechanism, R-T characteristics and its frequency dependence of specimens were measured. And also, the structures of specimens were studied. Especially this paper emphasized the explanation of the resistivity characteristics as the grain growth state of PTC thermistor specimens with respect to soaking temperature. According to the results, the resistivity of PTC thermistor whose grain was formed by semiconducting, was independent to the grain size at room temperature. For small and uniform grain size, the slope of the resistivity near the Curie temperature and the resistivity above the Curie temperature became greater and PTCR effect was improved.

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E-Polarized Reflection Coefficient by a Tapered Resistive Strip Grating with Infinite Resistivity at Strip-Edges (저항면의 양 끝에서 무한대로 변하는 저항률을 갖는 조기격자에 의한 E-분극 반사계수)

  • 윤의중;양승인
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.2
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    • pp.60-66
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    • 1994
  • The scattering problem by E-polarized plane wave with oblique incidence on a tapered resistive strip grating with infinite resistivity at strip-edges is analyzed by the method of moments in the spectral domain. Then the induced surface current density is expanded in a series of Ultraspherical polynomials of the zeroth order. The expansion coefficients are calculated numerically in the spectral domain, the numerical results of the geometricoptical reflection coefficient for the tapered resistivity in this paper are compared with those for the existing uniform resistivity. And the position of sharp variation points in the magnitude of the geometric-optical reflection coefficient can be moved by varying the incident angle and the strip spacing. It is found out that these sharp variation points are due to the transition of higher modes between the propagation mode and the evanescent mode.

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A Study on Electrical Resistivity Variation of Zinc Oxide Thin Film (산화아연 박막의 전기저항률 변화에 관한 연구)

  • 정운조;박계춘
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.8
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    • pp.601-606
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    • 1998
  • ZnO thin film had been deposited on the glass by sputtering method, and the electrical and structural properties were investigated. When the rf power was 180W and sputtering was 10 m Torr at room temperature, Al-doped ZnO thin film had the lowest resistivity(1$\times10^{-4}\Omega\cdot{cm}$) and then carrier concentration and Hall mobility were $6.27\times10^{20} cm^{-3} and 22.04 cm^2/V\cdot$s, respectively. The undoped ZnO thin film had about 10$\times10^{14}\Omega\cdot cm$ resistivity when oxygen content was 10% or more at room temperature. When the oxygen content was 50% and below and sputtering pressure was 1.0$\times$1.0 \ulcorner Torr, the surface morphology of thin film observed by SEM was overall uniform.

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A problem in the cross-hole resistivity method using pole-pole array (단극배열을 이용한 시추공-시추공 전기비저항 탐사법의 문제점)

  • Jo, In Gi;Choe, Gyeong Hwa
    • Journal of the Korean Geophysical Society
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    • v.1 no.1
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    • pp.51-58
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    • 1998
  • A numerical program has been developed to model 2-D resistivity responses for a pole-pole array configuration in cross-hole resistivity measurements. Apparent resistivity and secondary potential were computed using the program for a cylindrical inhomogeneity in an uniform host medium excited by a point source of current in a borehole. Surprisingly apparent resistivity in the receiver hole turns out to be lower than the one of surrounding medium regardless of the conductivity of cylindrical inhomogeneity. Using only cross-hole data, therefore, it is impossible to interpret the conductivity of inhomogeneity. To overcome this problem, 3-D measurement and interpretation are necessary. If 3-D data acquisition is impossible, inline data should be used to get the information about the conductivity of inhomogeneity.

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