• Fashion & Textile Research Journal
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• v.21 no.2
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• pp.231-236
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• 2019

This study investigated the proper dyeing conditions, color fastness and functionality of wool fabrics dyed with Zizania latifolia Turcz. We also tried to improve light fastness through treatment with benzophenone ultraviolet absorber. The dyeing of wool fabrics using Zizania latifolia Turcz was good even without pretreatment or mordanting treatment. Optimal wool fabric dyeing conditions were colorant concentration of 200% (o.w.f.), dyeing temperature of $100^{\circ}C$, dyeing time of 80 minutes and a dye bath pH of 3. Color fastness of dyed wool fabrics to washing, rubbing, perspiration and light was 4-5, 5, 4-4-5 (acidic), 4-5 (alkaline) and 2 respectively. The results after treatment with ultraviolet absorber for improving the fastness of daylight were improved to 3-4 grade. The UV protection rate were increased after dyeing and the deodorization of ammonia gas improved to 98%. Bacterial reduction rate (Staphylococcus aureus) of wool fabrics was excellent at 99.9%. All dye fastness (except for light fastness) was excellent; in addition, the functionality of wool fabrics dyed with Zizania latifolia Turcz also improved. The results are expected to be applied to various fields because they indicate excellent results after treatment with ultraviolet absorber for improving the fastness of daylight.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.32-37
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• 2016

Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be $90^{\circ}$ ideally, however, it is difficult to obtain $90^{\circ}$ SWA because absorber profile is changed by complicated etching process. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results show that the variations of normalized image log slope and critical dimension bias depending on SWA are reduced with PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM.

• Journal of the Korean Society of Clothing and Textiles
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• v.25 no.5
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• pp.925-932
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• 2001

The influence of ultraviolet(UV)-ray in sun light on human skin has been noted. Textiles can provide protection against harmful UV-radiation. Normally UV-absorbing finishes are used to get better protection. The purpose of this study is to evaluate the UV-cut properties of cotton fabrics treated with UV-absorber. 2,2-dihydroxy-4,4-dimethoxbenzophenone, as UV-absorber was applied to 100% cotton fabric. Reagents added in finishing solution were Triton X-100, polyethylene glycol 400, and $MgCl_2{\cdot}6H_2O$, and C.I. Direct Red 81. Both untreated and treated cotton fabrics were exposed to a xenon arc lamp for 20 and 80 hours. UV absorption spectra of finishing solutions and UV transmission spectra of fabrics were measured by the UV/VIS spectrophotometer. The results of this study can be summarized as follows. The results of this study can be summarized as follows. Absorption and the related transmission spectra were modified in a controlled way with UV-absorber. Absorption effect of UV-absorber was improved by adding Triton X-100, PEG 400, and $MgCl_2{\cdot}6H_2O$ in finishing solution. The UV absorption of finishing solution was in the following order: U/D/T/P/M>D/T/P/M> D/T> D/P, D>U/T/P/M>U/T>T/P/M>T. The UV transmittance of cotton fabrics was remarkably decreased by the application of UV-absorber and additives. The UV-cut properties were most improved by the application of U/D/T/P/M.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.282-283
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• 2009

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1296-1301
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• 2006

The human eye is exposed to UV and visible light. UV light exposure becomes harmful to the eye. Protection for eyes should block all ultraviolet rays. In our study, organic-inorganic hybrid materials have been applied to UV blocking coatings with UV absorbing materials on transparent plastics. The optical properties of UV blocking coatings were investigated in PMMA, CR 39 and PC substrates. In case of all UV absorbers, the transmission of UV light decreases with an increased amount of absorber. Our findings indicate that PMMA significantly reduced the transmission of UV radiation, CR 39 showed moderate decrease, while UV-uncoated PC had some UV blocking properties. Adhesion, hot water resistance and chemical resistance of the UV-coated CR 39 lenses were good. Pencil hardness were 4H. Abrasion resistance were poor.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.13-18
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• 2010

Extreme ultraviolet (EUV) lithography using 13.5 nm wavelengths is expected to be adopted as a mass production technology for 32 nm half pitch and below. One of the new issues introduced by EUV lithography is the shadowing effect. Mask shadowing is a unique phenomenon caused by using mirror-based mask with an oblique incident angle of light. This results in a horizontal-vertical (H-V) biasing effect and ellipticity in the contact hole pattern. To minimize the shadowing effect, a refilled mask is an available option. The concept of refilled mask structure can be implemented by partial etching into the multilayer and then refilling the trench with an absorber material. The simulations were carried out to confirm the possibility of application of refilled mask in 32 nm line-and-space pattern under the condition of preproduction tool. The effect of sidewall angle in refilled mask is evaluated on image contrast and critical dimension (CD) on the wafer. We also simulated the effect of refilled absorber thickness on aerial image, H-V CD bias, and overlapping process window. Finally, we concluded that the refilled absorber thickness for minimizing shadowing effect should be thinner than etched depth.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.12
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• pp.10-15
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• 2020

Ultraviolet rays, which have wavelengths smaller than 400 nm, are very harmful to the eyes. Recently, high-energy visible light was also revealed to be harmful to retinal cells. Therefore, polymer eyeglass lenses that can block UV and high-energy visible light are needed for eye health. In this study, high-refractive-index polymer eyeglass lens, n=1.67, were manufactured using the injection-mold method with the m-xylene diisocyanate monomer, 2,3-bis((2-mercaptoethyl)thio)-1-propanethiol monomer, benzotriazole UV absorber, release of alkyl phosphoric ester, dye mixture of CI solvent violet 13, and catalyst of dibutyltin dichloride mixture. A multi-layer anti-reflection coating was applied to manufactured polymer eyeglass lenses for both sides using an E-beam evaporation system. The optical properties of the manufactured lenses with the UV and high-energy visible light-blocking function were analyzed by UV-visible spectrophotometry. As a result, the polymer eyeglass lens with a UV absorber of 0.5 wt. % blocked 99% of UV and high-energy visible light shorter than 411 nm. The average transmittance of the polymer eyeglass lens with a UV absorber of 0.5wt.% was 97.9% in the range of 460 ~ 660 nm for photopic eye sensitivity higher than 10%. Therefore, clear image acquisition in photopic vision is possible.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.30 no.1
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• pp.117-122
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• 2004

Exessive UV radiation causes a lot of problems in our skin. In order to find out the alternative UV absorber that can safely be used in cosmetics, we have screened various natural extracts in terms of their UV absorbing effect. Some natural extracts, which possess antioxidative activities, have also been found to retard the oxidation process in our experiment. Natural compound such as 7-hydroxycymopol, baicalein, etc. could be transformed into adjuvant UV absorber by chemical modification. In cosmetics, its chemical stability against UV radiation, exposure to oxygen and other factors could be improved by using the silicone or W/S type emulsion. The values of MED (minimal erythema dose) were improved to 0.10 ${\pm}$ 0.02∼0.11 ${\pm}$ 0.02 by adding this natural extract into the cosmetic formulations. In conclusion, the results of the present study show that natural extracts could be used as an adjuvant UV absorber, if they are stabilized.

• Journal of Fashion Business
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• v.11 no.6
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• pp.52-61
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• 2007

To increase the ultraviolet radiation (UVR) protection of cotton fabric, ultraviolet protection (UVP) materials were treated onto cotton fabric using a new technique, UV-curing. A photocrosslinkablepolymer, poly(ethylene glycol) dimethacrylate was used as a UV-curable resin in the presence of a small amount of photoinitiator. Two kinds of UVP materials were used, UV-absorber, 2,2'-dihydroxy-4-methoxy benzophenone, and UV-scatterer, $TiO_2/ZnO$ Pad-dry-cure method in employing these materials onto cotton was also conducted to compare the effectiveness and the washfastness of UVP treatment between curing methods. UVP treated cotton fabric showed a moderate increase in UVP in case of 2,2'-dihydroxy-4-methoxy benzophenone treatment and a high increase in case of $TiO_2/ZnO$. UV-curing method increased the washfastness of UVP property of $TiO_2/ZnO$ treated cotton fabrics. However, in case of 2,2'-dihydroxy-4-methoxy benzophenone, similar wash fastnesses of UV-cured and pad-dry-cured cotton were observed. It can be presumed that 2,2'-dihydroxy-4-methoxy benzophenone was not significantly affected by water since its hydrophobicity. In short, UV-curing of UVP materials onto cotton was successfully done, and treated cotton fabrics showed the increased UVP properties and an increased washfastness in some extent.