• 한국의류산업학회지
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• 제21권2호
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• pp.231-236
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• 2019

This study investigated the proper dyeing conditions, color fastness and functionality of wool fabrics dyed with Zizania latifolia Turcz. We also tried to improve light fastness through treatment with benzophenone ultraviolet absorber. The dyeing of wool fabrics using Zizania latifolia Turcz was good even without pretreatment or mordanting treatment. Optimal wool fabric dyeing conditions were colorant concentration of 200% (o.w.f.), dyeing temperature of $100^{\circ}C$, dyeing time of 80 minutes and a dye bath pH of 3. Color fastness of dyed wool fabrics to washing, rubbing, perspiration and light was 4-5, 5, 4-4-5 (acidic), 4-5 (alkaline) and 2 respectively. The results after treatment with ultraviolet absorber for improving the fastness of daylight were improved to 3-4 grade. The UV protection rate were increased after dyeing and the deodorization of ammonia gas improved to 98%. Bacterial reduction rate (Staphylococcus aureus) of wool fabrics was excellent at 99.9%. All dye fastness (except for light fastness) was excellent; in addition, the functionality of wool fabrics dyed with Zizania latifolia Turcz also improved. The results are expected to be applied to various fields because they indicate excellent results after treatment with ultraviolet absorber for improving the fastness of daylight.

• 반도체디스플레이기술학회지
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• 제15권2호
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• pp.32-37
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• 2016

Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be $90^{\circ}$ ideally, however, it is difficult to obtain $90^{\circ}$ SWA because absorber profile is changed by complicated etching process. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results show that the variations of normalized image log slope and critical dimension bias depending on SWA are reduced with PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM.

• 한국의류학회지
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• 제25권5호
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• pp.925-932
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• 2001

The influence of ultraviolet(UV)-ray in sun light on human skin has been noted. Textiles can provide protection against harmful UV-radiation. Normally UV-absorbing finishes are used to get better protection. The purpose of this study is to evaluate the UV-cut properties of cotton fabrics treated with UV-absorber. 2,2-dihydroxy-4,4-dimethoxbenzophenone, as UV-absorber was applied to 100% cotton fabric. Reagents added in finishing solution were Triton X-100, polyethylene glycol 400, and $MgCl_2{\cdot}6H_2O$, and C.I. Direct Red 81. Both untreated and treated cotton fabrics were exposed to a xenon arc lamp for 20 and 80 hours. UV absorption spectra of finishing solutions and UV transmission spectra of fabrics were measured by the UV/VIS spectrophotometer. The results of this study can be summarized as follows. The results of this study can be summarized as follows. Absorption and the related transmission spectra were modified in a controlled way with UV-absorber. Absorption effect of UV-absorber was improved by adding Triton X-100, PEG 400, and $MgCl_2{\cdot}6H_2O$ in finishing solution. The UV absorption of finishing solution was in the following order: U/D/T/P/M>D/T/P/M> D/T> D/P, D>U/T/P/M>U/T>T/P/M>T. The UV transmittance of cotton fabrics was remarkably decreased by the application of UV-absorber and additives. The UV-cut properties were most improved by the application of U/D/T/P/M.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 창립 20주년기념 특별학술발표회
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• pp.282-283
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• 2009

• 한국산학기술학회논문지
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• 제7권6호
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• pp.1296-1301
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• 2006

눈은 자외선과 가시광선에 노출되어 있다. 눈은 자외선 노출에 해로우므로 모든 자외선으로부터 눈을 보호해야 한다. 본 연구에서는 자외선 차단을 위해 투명 플라스틱에 유-무기 하이브리드 재료와 자외선 흡수제의 배합에 의한 자외선 차단 코팅하였고, PMMA, CR 39 및 PC기재에 적용하여 자외선 차단 효과를 조사하였다. 자외선 흡수제의 양이 증가할수록 자외선의 투과도는 낮았다. PMMA의 경우 자외선 투과도를 현저히 감소시켰으며 CR 39에서도 자외선 차단 효과가 있는 것으로 나타났다. 한편, PC자체에서는 자외선 차단효과가 있는 것으로 평가되었다. CR 39 렌즈의 부착력, 내약품성, 내온수성은 우수하였고, 연필 경도의 경우 4H였으며 내마모성은 좋지 않았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.13-18
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• 2010

Extreme ultraviolet (EUV) lithography using 13.5 nm wavelengths is expected to be adopted as a mass production technology for 32 nm half pitch and below. One of the new issues introduced by EUV lithography is the shadowing effect. Mask shadowing is a unique phenomenon caused by using mirror-based mask with an oblique incident angle of light. This results in a horizontal-vertical (H-V) biasing effect and ellipticity in the contact hole pattern. To minimize the shadowing effect, a refilled mask is an available option. The concept of refilled mask structure can be implemented by partial etching into the multilayer and then refilling the trench with an absorber material. The simulations were carried out to confirm the possibility of application of refilled mask in 32 nm line-and-space pattern under the condition of preproduction tool. The effect of sidewall angle in refilled mask is evaluated on image contrast and critical dimension (CD) on the wafer. We also simulated the effect of refilled absorber thickness on aerial image, H-V CD bias, and overlapping process window. Finally, we concluded that the refilled absorber thickness for minimizing shadowing effect should be thinner than etched depth.

• 한국산학기술학회논문지
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• 제21권12호
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• pp.10-15
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• 2020

파장 400 nm 이하의 자외선은 눈 건강에 매우 해롭다. 또한 고에너지 가시광도 망막 세포에 영향을 줄 수 있음이 최근에 밝혀졌다. 따라서 자외선 및 고에너지 가시광 차단 기능의 안경렌즈 개발이 시대적으로 요청되고 있다. 본 연구에서는 m-자일릴렌 디이소시아네이트 모노머와 2,3-bis((2-mercaptoethyl)thio)-1-propanethiol 모노머 및 벤트리아졸 UV 흡수제, 알킬인산에스터 이형제, 안료혼합물(CI solvent violet 13), 이염화부틸주석 촉매제 등의 혼합물을 인젝션 몰드 방법으로 열중합 공정을 적용하여, 굴절률 1.67의 고굴절률 폴리머 안경렌즈를 제조하였다. 제조된 폴리머 안경렌즈의 양면에 전자빔 진공증착 시스템으로 다층 반사방지 코팅을 하였다. 제조된 안경렌즈의 자외선 및 고에너지 가시광 차단 기능을 UV-visible spectrophotometer로 분석하였다. 그 결과 UV 흡수제를 0.5wt% 첨가한 폴리머 안경렌즈가 411 nm 파장 이하의 자외선 및 고에너지 가시광을 99 % 이상 차단하였다. 또한 460 ~ 660 nm 파장의 명소시 시각 민감도 10% 이상의 영역에서 평균 투과율이 97.9%를 나타내어 명소시에서 선명한 상을 얻을 수 있었다.

• 대한화장품학회지
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• 제30권1호
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• pp.117-122
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• 2004

과도한 자외선은 피부에 많은 문제를 일으킨다. 화장품에서 안전하게 사용할 수 있는 자외선 흡수제를 찾기 위해서 자외선 흡수 효과를 갖는 다야한 종류의 천연추출물을 검색하였다. 몇 가지 천연 추출물들은 항산화 활성이 있으며 본 연구에서도 산화 반응을 억제하는 것으로 나타났다. 7-Hydroxvcymopol, baicalein 그리고 그 외 다른 천연 성분들은 화학적 변형을 통하여 자외선 보조흡수제로 전환시킬 수 있었다 화장품에서는 실리콘과 W/S 타입의 에멀젼을 사용함으로써 자외선이나 산소 및 다른 요인에의 노출에 대항하여 이들 천연 성분들의 안정성을 개선시킬 수 있었다. 화장품 처방에 이들 천연 추출물을 첨가할 때 최소 홍반량(MED)은 0.10 $\pm$ 0.02∼0.11 $\pm$ 0.02 만큼 개선되었다. 연구 결과는, 천연 추출물이 안정화만 된다면 자외선 보조 흡수제로로도 사용 가능함을 시사하고 있다.

• 패션비즈니스
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• 제11권6호
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• pp.52-61
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• 2007

To increase the ultraviolet radiation (UVR) protection of cotton fabric, ultraviolet protection (UVP) materials were treated onto cotton fabric using a new technique, UV-curing. A photocrosslinkablepolymer, poly(ethylene glycol) dimethacrylate was used as a UV-curable resin in the presence of a small amount of photoinitiator. Two kinds of UVP materials were used, UV-absorber, 2,2'-dihydroxy-4-methoxy benzophenone, and UV-scatterer, $TiO_2/ZnO$ Pad-dry-cure method in employing these materials onto cotton was also conducted to compare the effectiveness and the washfastness of UVP treatment between curing methods. UVP treated cotton fabric showed a moderate increase in UVP in case of 2,2'-dihydroxy-4-methoxy benzophenone treatment and a high increase in case of $TiO_2/ZnO$. UV-curing method increased the washfastness of UVP property of $TiO_2/ZnO$ treated cotton fabrics. However, in case of 2,2'-dihydroxy-4-methoxy benzophenone, similar wash fastnesses of UV-cured and pad-dry-cured cotton were observed. It can be presumed that 2,2'-dihydroxy-4-methoxy benzophenone was not significantly affected by water since its hydrophobicity. In short, UV-curing of UVP materials onto cotton was successfully done, and treated cotton fabrics showed the increased UVP properties and an increased washfastness in some extent.