• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.112-112
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• 2011

The interaction of water molecules with solid surfaces has been a subject of considerable interests, due to its importance in the fields from atmospheric and environmental phenomena to biology, catalysis and electrochemistry [1,2]. Among various kinds of surfaces, a lot of theoretical and experimental studies have been performed regarding water on MgO(100), however, to date, there has been no direct observation of water molecules on MgO by scanning tunneling microscope (STM) as compared with those on metal surface. Here, we will present the direct observation and manipulation of single water molecules on ultrathin MgO(100) films using low-temperature scanning tunneling microscope (LT-STM) [3]. Our results rationalize the previous theoretical predictions of isolated water molecules on MgO including the optimum adsorption sites and non-dissociative adsorption of water. Moreover, we were able to dissociate a water molecule by exciting the vibrational mode of water, which is unattainable on metal surfaces. The enhanced residual time of tunneling electrons in molecules on the insulating film is responsible for this unique pathway toward dissociation of water.

• 한국자기학회지
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• 제20권6호
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• pp.212-215
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• 2010

비정질 Ga 박막은 벌크에 비해 높은 초전도 임계온도와 임계자기장 값을 보이나 그 특성은 불안정하여 상온에 한번 노출되면 그 초전도 특성을 잃어버리게 된다. 이 논문에서는 Ga/Al 두층 박막을 제작하여 이러한 비정질 Ga 박막의 불안정한 초전도 특성을 개선할 뿐만 아니라 기존의 스핀검출에 응용되고 있는 Al 박막을 대체할 수 있는 가능성을 연구하였다. 극초진공 분자빔박막 증착장비(UHV-MBE)를 사용하여 Ga/Al 두층 박막을 제작하고, 표면의 적절한 플라즈마 산화 처리에 의한 Ga/Al/$Al_2O_3$/Fe의 터널 접합구조를 제작하여 Ga/Al 박막의 초전도 특성을 측정하였다. 한편, Ga/Al 박막의 표면 특성은 Auger 전자 분광기를 이용하여 분석하였다.

• 한국진공학회지
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• 제17권3호
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• pp.183-188
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• 2008

내각준위 X선 광전자 분광법을 이용하여 Pt(111) 표면 위에 증착된 Fe 초박막의 산소 흡착에 대한 연구를 수행하였다. 6개 단층 이하의 두께를 갖는 Fe 초박막을 상온에서 산소에 노출시켜 산소 원자가 화학흡착된 것을 확인하고, 후열처리 과정에 따른 탈착 및 Fe층의 변화를 살펴보았다. 흡착된 산소 원자는 $600{\sim}700K$에서 부분적으로 탈착되고, 700 K 이상에서 Fe 원자들이 Pt 기판 안으로 섞여 들어감을 내각준위 스펙트럼 세기들로부터 알 수 있었다. Fe 원자들과 Pt 원자들 간의 섞임은 산소가 흡착되지 않은 경우와 거의 동일한 경향을 보였으며, 섞임에 의한 Fe-Pt 합금의 형성은 Fe $2p_{3/2}$ 광전자 스펙트럼의 속박에너지의 변화로부터 확인할 수 있었다. 탈착되지 않고 남은 산소의 양은 전체의 1/2로서 속박에너지가 $600{\sim}700K$ 사이에서 탈착된 산소보다 약 1.3 eV 커서 Fe층 위에 흡착된 산소들과는 다른 상임을 알 수 있었다. 이들 산소 원자는 1000 K에서야 탈착되었다.

• 한국재료학회지
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• 제16권4호
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• pp.248-252
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• 2006

An investigation is reported on the coating of ZnS:Cu,Cl phosphors by $HfO_2$ using atomic layer deposition method. Hafnium oxide films were prepared at the chamber temperature of $280^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors and reactant gas, respectively. XPS and ICP-MS analysis showed the surface composition of coated phosphor powder was hafnium oxide. In FE-SEM analysis, the surface morphology of uncoated phosphors became smoother and clearer as the number of ALD cycle increased from 900 to 1800. The photoluminescence intensity for coated phosphors showed $7.3{\sim}13.4%$ higher than that of uncoated. The effect means that the reactive surface is uniformly coated with stable hafnium oxide to reduce the dead surface layer without change of bulk properties and also its absorptance is almost negligible due to ultrathin(nano-scaled) films. The growth rate is about $1.1{\AA}/cycle$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.9-10
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• 2010

Since the discovery of graphene by mechanical exfoliation from graphite[1], various fabrication methods are available today such as chemical exfoliation, epitaxial graphene on SiC substrates, etc. In view of industrialization, the mechanical exfoliation method may not be an option. Epitaxial graphene on SiC substrates, in this respect, is by far more practical because the method consists of conventional thermal treatments familiar to semiconductor industry. Still, the use of the SiC substrate itself, and hence the incompatibility with the Si technology, lessens the importance of this technology in its future industrialization. In this context, we have tackled the problem of forming graphene on Si substrates (GOS). Our strategy is to form an ultrathin (~80 nm) SiC layer on top of a Si substrate, and to graphitize the top SiC layers by a vacuum annealing. We have actually succeeded in forming the GOS structure [2,3,4]. Raman-scattering microscopy indicates presence of few-layer graphene (FLG) formed on our annealed SiC/Si heterostructure, with the G ($1580\;cm^{-1}$) and the G'($2700\;cm^{-1}$) bands, both related to ideal graphene, clearly observed. Presence of the D ($1350\;cm^{-1}$) band indicates presence of defects in our GOS films, whose elimination remains as a challenge in the future. To obtain qualified graphene films on Si substrate, formation of qualified SiC films is crucial in the first place, and is achieved by tuning the growth parameters into a process window[5]. With a potential for forming graphene films on large-scale Si wafers, GOS is a powerful candidate as a key technology in bringing graphene into silicon technology.

• 폴리머
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• 제36권4호
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• pp.507-512
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• 2012

순수 PMMA와 methacryl-polyhedral oligomeric silsesquioxane(Ma-POSS)를 5 wt% 첨가한 PMMA를 박막(~650 nm)과 초박막(~50 nm)으로 제조하였으며, 유리전이온도($T_g$)와 등온 물리적 시효에 미치는 박막의 두께에 미치는 POSS의 첨가 효과를 시차주사열량계(DSC)를 이용하여 조사하였다. 초박막화와 Ma-POSS의 첨가로 인해 $T_g$ 감소가 관찰되었다. 또한 등온 물리적 시효에 의한 엔탈피 완화값(${\Delta}H_{Relax}$)도 초박막화 Ma-POSS를 첨가하였을 때 감소하였다. 시효시간에 따른 ${\Delta}H_{Relax}$ 데이터에 KWW(Kohlrausch-Williams-Watts)식을 적용하여 최대 엔탈피(${\Delta}H_{\infty}$), 이완시간(${\tau}$) 그리고 이완시간의 분포상수(${\beta}$)를 결정하였으며 이를 비교 분석하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1980-1982
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• 1999

Conductive Langmuir-Blodgett(LB) films have recently attracted much interest from the viewpoint of ultrathin film conductors at the molecular level. The result shows that the Maxwell-displacement-current (MDC) measuring technique is useful in the detection of phase-transitions over the entire range of molecule areas. In this parer, electrical properties of PBDG Langmuir(L) films were investigated using a displacement current measuring technique with pressure stimulation. Displacement current was generated When the Spread volume $150{\mu}{\ell}$ and compression velocity was about 30, 40, 50 mm/min. In the result, it is known that current is generated of higher current peek as compression velocity become faster.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1184-1186
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• 1995

The absorption spectra of synthesis of azobenzene containing long chain fatty acids were investigated by UV spectrophotometer in chloroform solution. Also, the pressure-area isotherms of the molecules on the water-air interface were obtained and the LB films were fabricated onto a quartz slides and quartz crystals by the conventional Langmuir-Blodggett(LB) method. The UV absorption spectra of Langmuir-Blodggett(LB) films on quartz slides have been measured. From these measurements, following conclusions were obtained. Azobenzene containing long chain fatty acids show a photoisomerization by irradiation of UV light and visible light alternatively. At the pressure-area isotherms, the value of surface pressure increment were decreased when the number of $C_n$ increased. Also the LB films show a photoisomerization characteristics. So the LB film of azobenzene containing long chain fatty acid has possibility to being applied to functional molecular device such as photomemory and light switching.

• 한국응용과학기술학회지
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• 제26권2호
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• pp.224-231
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• 2009

Techniques measuring Maxwell displacement current (MDC) and LB films surface measuring technique have been applied to the study of monolayers of polyamic acid containing azobenzene. MDCs was generated from monolayers on the water surface by monolayer compression and expansion. It was generated when the area per molecule was about $103{\AA}^2\;and\;78{\AA}^2$ just before the initial rise of the surface pressure during the 1st and 2nd mixed monolayer compressions cycle, respectively. It was the maximum of MDCs appeared at the molecular area just before the initial rise of surface pressure in compression cycles, and we have found that the increase of aggregations causes the noticeable increase of the surface roughness.

• E2M - 전기 전자와 첨단 소재
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• 제11권10호
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• pp.94-99
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• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.