• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.465-468
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• 1999

Electrical properties of metal-ferroelectric-semiconductor field effect transistor(MFSFET) using $BaMgF_4$ thin films grown on p-Si(100) substrates have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}C$ in an ultra high vacuum(UHV) system. First an in-situ post-deposition annealing was conducted for 20s at $650^{\circ}C$ and second an in-situ post-annealing was conducted for 10s at $950^{\circ}C$. The electrical properties of MFSFET compared with using A1 and Pt electrodes.

• Korean Journal of Materials Research
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• v.21 no.3
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• pp.174-179
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• 2011

Ultra-thin aluminum (Al) and tin (Sn) films were grown by dc magnetron sputtering on a glass substrate. The electrical resistance R of films was measured in-situ method during the film growth. Also transmission electron microscopy (TEM) study was carried out to observe the microstructure of the films. In the ultra-thin film study, an exact determination of a coalescence thickness and a continuous film thickness is very important. Therefore, we tried to measure the minimum thickness for continuous film (dmin) by means of a graphical method using a number of different y-values as a function of film thickness. The raw date obtained in this study provides a graph of in-situ resistance of metal film as a function of film thickness. For the Al film, there occurs a maximum value in a graph of in-situ electrical resistance versus film thickness. Using the results in this study, we could define clearly the minimum thickness for continuous film where the position of minimum values in the graph when we put the value of Rd3 to y-axis and the film thickness to x-axis. The measured values for the minimum thickness for continuous film are 21 nm and 16 nm for sputtered Al and Sn films, respectively. The new method for defining the minimum thickness for continuous film in this study can be utilized in a basic data when we design an ultra-thin film for the metallization application in nano-scale devices.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.900-906
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• 2004

Solid oxide fuel cells have a limitation in their low-temperature application due to the low ionic conductivity of electrolyte materials and difficulties in thin film formation on porous gas diffusion layer. These problems can be solved by improvement of ionic conductivity through controlled nanostructure of electrolyte and adopting nanoporous electrodes as substrates which have homogeneous submicron pore size and highly flattened surface. In this study, ultra-thin oxide films having submicron thickness without gas leakage are deposited on nanoporous substrates. By oxidation of metal thin films deposited onto nanoporous anodic alumina substrates with pore size of $20nm{\sim}200nm$ using dc-magnetron sputtering at room temperature, ultra-thin and dense ionic conducting oxide films with submicron thickness are realized. The specific material properties of the thin films including gas permeation, grain/gran boundaries formation, change of crystalline structure/microstructure by phase transition are investigated for optimization of ultra thin film deposition process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.32.1-32.1
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• 2011

Ultra thin tantalum nitride (TaNx) films with various thicknesses (10 nm to 40 nm) have been deposited by rf magnetron sputtering technique on glass substrates. The as deposited films were systematically characterized by several analytical techniques such as X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, atomic force microscopy, UV-Vis-NIR double beam spectrophotometer and four point probe method. From the XRD results, the as deposited films are in amorphous nature, irrespective of the film thicknesses. The films composition was changed greatly with increasing the film thickness. SEM micrographs exhibited the densely pack microstructure, and homogeneous surface covered by small size grains at lower thickness deposited films. The surface roughness of the films was linearly increases with increasing the films thickness, consequently the transmittance decreased. The absorption edge was shifted towards higher wavelength as the film thickness increases.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.2
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• pp.144-148
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• 2013

In this paper, the ultra water-repellent thin films were prepared by RF PECVD. On the basis of surface morphology, chemical bonding states and plasma diagnostics, a formation model of clusters for the ultra water-repellent films was discussed from considerations of formation process and laser scattering results. Moreover, using laser scattering method, the relative change of quantity of nano-clusters or size of agglomerates could be confirmed. From the results, the films were deposited with nano-clusters and those of agglomerates, which formed in organosilicon plasma, and formation of agglomerates were depended on the deposition time.

• Proceedings of the Korean Magnestics Society Conference
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• 1991.11a
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• pp.90-91
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• 1991

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.108-113
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• 1994

The characteristics of the oxidation prevention layers for the copper metallization were investigated. The thin films such as Cr, TiN and Al were used as the oxidation prevention layers for copper. Ultra thin aluminum films were found to prevent the oxidation of copper up to the highest oxidation annealing temperature among the barrier layers examined in this study. It was found that oxygen did not diffuse into copper through aluminum films because of the aluminum oxide layer formed on the aluminum surface and the ultra thin aluminum film could be a good oxidation barrier layer for the copper metallization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.59-62
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• 1998

Thermal treatment dependences of MFS devices in $BaMgF_4$ on Si structures have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}$ in an ultra high vacuum(UHV) system. After in-situ post-deposition annealing was conducted for 20 s at $650^{\circ}$, bias and temperature were applied to $BaMgF_4/Si$ structures. Although X-ray diffraction analysis showed that the films were polycrystalline in nature before and after bias temperature, the C-V properties were some different between with and without bias-temperature treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.173.2-173.2
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• 2014

Thin nitride thin films were synthesized by reactive radio-frequency magnetron sputtering in the ultra high vacuum (UHV) chamber. To control the characteristics of thin films, tin nitride thin films were obtained various argon and nitrogen gas mixtures, especially low nitrogen gas ratios. Tin nitride thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and 4 point probe measurement. The result of alpha step and SEM showed that the thickness of thin nitride thin films were decreased with increasing nitrogen gas ratios. The metallic tin structure was decreased and the amorphous tin nitride structure were observed by XRD with higher nitrogen gas ratios. The oxidation state of tin and nitride were studied with high resolution Sn 3d and N 1s XP spectra.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.134-138
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• 1999

We have setup a compact and useful in-situ SMOKE system in order to study surface magnetism of ultra-thin films. Since the longitudinal or polar magnetic fields can be applied to the sample by just rotating the sample manipulator, It is very simple to take hysteresis curve for in-plane or polar surface magnetism. The SMOKE system was tested by investigating the surface magnetism of ultra-thin Co film deposited on Pt(111) surface.