• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.265.1-265.1
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• 2013

Nanoporous anodic aluminum oxide (AAO), a self-ordered hexagonal array has various applications for nanofabrication such as nanotemplate, and nanostructure. In order to obtain highly-ordered porous alumina membranes, Masuda et al. proposed a two-step anodization process however this process is confined to small domain size and long hours. Recently, alternative methods overcoming limitations of two-step process were used to make prepatterned Al surface. In this work, we confirmed that there is a specific tendency used a PDMS stamp to obtain a pre-patterned Al surface. Using the nanoindentaions of a PDMS stamp as chemical carrier for wet etching, we can easily get ordered nanoporous template without two-step process. This chemical etching method using a PDMS stamp is very simple, fast and inexpensive. We use two types of PDMS stamps that have different intervals (800nm, 1200nm) and change some parameters have influenced the patterning of being anodized, applied voltage, soaking and stamping time. Through these factors, we demonstrated the patterning effect of large scale PDMS stamp.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.395-397
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• 2002

Dielectric thin films of Pb$\_$0.72/La$\_$0.28/Ti$\_$0.93/O$_3$(PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.16-22
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• 1993

A via-hole process for reproducible and reliable GaAs MMIC fabrication is described. The via-hole etching process consists of two step dry etching. During the first etching step a BC $I_{3}$/C $I_{2}$/Ar gas mixure is used to achieve high etch rate and small lateral etching. In the second etching step. CC $L_{2}$ $F_{2}$ gas is used to achieve selective etching of the GaAs substrate with respect to the front side metal layer. Via holes are formed from the backside of a 100$\mu$m thick GaAs substrate that has been evaporated initially with 500.angs. thick chromium and subsequently a 2000.angs. thick gold layer. The fabricated via holes are electroplated with gold (~20$\mu$m thick) to form via connections. The results show that established via-hole process is satisfactory for GaAs MMIC fabrication.

• Korean Chemical Engineering Research
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• v.53 no.4
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• pp.417-424
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• 2015

In this study, the pretreatment of Helianthus tuberosus residue had been performed. The two-stage pretreatment on flow-through process were applied in the interests of increase of sugar production yield on enzymatic saccharification. The delignification by aqueous ammonia and the fractionation of hemicellulose by sulfuric acid solution as pretreatment solution were confirmed for effects of enzymatic saccharification. Two-stage pretreatment process was performed using aqueous ammonia and sulfuric acid. The first step was performed with aqueous ammonia for 40 min at $163.2^{\circ}C$ and the second step was performed with sulfuric acid solution for 20 min at $169.7^{\circ}C$. And then, the first step was performed with sulfuric acid solution and the second step was pretreated with aqueous ammonia. At this time, the glucose production was 30.7 g and the glucose yield was 72.4% in the first step process with aqueous ammonia. And, the glucose production was 20.9 g and the glucose yield was 49.3% in the first step process with sulfuric acid solution.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1533-1536
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• 2001

To grow the diamond films by using RF-MW two step process, at first, diamond seeds were deposited on silicon substrate by RF plasma CVD, and then a diamond layer grown by MW plasma CVD on the seeds. The grain-size of diamond films deposited by using RF-MW two step process was smaller and denser and also, crystallity of diamond film was better than those of the MW plasma CVD process. The deposited diamond films were analyzed by SEM(scanning electron microscophy), XRD (x-ray diffraction), and Raman spectroscopy.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.416-418
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• 2000

Thin films of phase-pure perovskite $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) were deposited in-situ onto Pt/Ti/$SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Microstructural and electrical properties of the film were investigated by C-V measurement, leakage current measurement and SEM. Two-step process to grow $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics.

• Journal of Powder Materials
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• v.27 no.3
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• pp.256-267
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• 2020

Metal additive manufacturing (AM) technologies are classified into two groups according to the consolidation mechanisms and densification degrees of the as-built parts. Densified parts are obtained via a single-step process such as powder bed fusion, directed energy deposition, and sheet lamination AM technologies. Conversely, green bodies are consolidated with the aid of binder phases in multi-step processes such as binder jetting and material extrusion AM. Green-body part shapes are sustained by binder phases, which are removed for the debinding process. Chemical and/or thermal debinding processes are usually devised to enhance debinding kinetics. The pathways to final densification of the green parts are sintering and/or molten metal infiltration. With respect to innovation types, the multi-step metal AM process allows conventional powder metallurgy manufacturing to be innovated continuously. Eliminating cost/time-consuming molds, enlarged 3D design freedom, and wide material selectivity create opportunities for the industrial adoption of multi-step AM technologies. In addition, knowledge of powders and powder metallurgy fuel advances of multi-step AM technologies. In the present study, multi-step AM technologies are briefly introduced from the viewpoint of the entire manufacturing lifecycle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.523-524
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• 2007

This paper discusses the planarization process of thick copper film structure used for power supply device. Chemical mechanical polishing(CMP) has been used to remove a metal film and obtain a surface planarization which is essential for the semiconductor devices. For the thick metal removal, however, the long process time and other problems such as dishing, delamination and metal layer peeling are being issued, Compared to the traditional CMP process, Electro-chemical mechanical planarization(ECMP) is suggested to solve these problems. The two-step process composed of the ECMP and the conventional CMP is used for this experiment. The first step is the removal of several tens ${\mu}m$ of bulk copper on patterned wafer with ECMP process. The second step is the removal of residual copper layer aimed at a surface planarization. For more objective comparison, the traditional CMP was also performed. As an experimental result, total process time and process defects are extremely reduced by the two-step process.

• Korean Journal of Materials Research
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• v.34 no.2
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• pp.116-124
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• 2024

In this study, we investigated the microstructure and piezoelectric properties of 0.96(K_0.456Na_0.536)Nb_0.95Sb_0.05-0.04Bi_0.5(Na_0.82K_0.18)_0.5ZrO₃ (KNNS-BNKZ) ceramics based on one-step and two-step sintering processes. One-step sintering led to significant abnormal grain (AG) growth at temperatures above 1,085 ℃. With increasing sintering temperature, piezoelectric and dielectric properties were enhanced, resulting in a high d₃₃ = 506 pC/N for one-step specimen sintered at 1,100 ℃ (one-step 1,100 ℃ specimen). However, for one-step 1,115 ℃ specimen, a slight decrease in d₃₃ was observed, emphasizing the importance of a high tetragonal (T) phase fraction for superior piezoelectric properties. Achieving a relative density above 84 % for samples sintered by the one-step sintering process was challenging. Conversely, two-step sintering significantly improved the relative density of KNNS-BNKZ ceramics up to 96 %, attributed to the control of AG nucleation in the first step and grain growth rate control in the second step. The quantity of AG nucleation was affected by the duration of the first step, determining the final microstructure. Despite having a lower T phase fraction than that of the one-step 1,100 ℃ specimen, the two-step specimen exhibited higher piezoelectric coefficients (d₃₃ = 574 pC/N and k_p = 0.5) than those of the one-step 1,100 ℃ specimen due to its higher relative density. Performance evaluation of magnetoelectric composite devices composed of one-step and two-step specimens showed that despite having a higher g₃₃, the magnetoelectric composite with the one-step 1,100 ℃ specimen exhibited the lowest magnetoelectric voltage coefficient, due to its lowest k_p. This study highlights the essential role of phase fraction and relative density in enhancing the performance of piezoelectric materials and devices, showcasing the effectiveness of the two-step sintering process for controlling the microstructure of ceramic materials containing volatile elements.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.62-65
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• 2003

VLM-ST process requires an additional human interaction due to the manual stacking and bonding. Hence, building time, building cost and the part quality are dependent on the skill of labor. In this present work, a novel rapid prototyping (RP) process, as an automatic VLM-ST (VLM-STA), has been proposed to improve building efficiency of VLM-ST process and reliability of products. The apparatus of VLM-STA is designed to embody the process. Several characteristics of the proposed process and the apparatus are discussed. In order to examine the efficiency and the applicability of the proposed process, various three-dimensional shapes, such as a piston and a human head shape, are fabricated on the apparatus.