• 제목/요약/키워드: turn off

검색결과 758건 처리시간 0.037초

전력용 트랜지스터의 직렬연결시 스윗칭 특성 (The Switching Characteristics of Series-Connected Power Transistors)

  • 서범석;이택기;현동석
    • 대한전기학회논문지
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    • 제41권6호
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    • pp.600-606
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    • 1992
  • The series connection of power switching semiconductor elements is essential when a high voltage converter is made, so researches are being conducted to further develop this technology. In the series connection of power switching semiconductor elements, the main problem is that simultaneous conduction at turn-on and simultaneous blocking at turn-off together with voltage balancing are unattainable because of the difference of their switching characteristics. In this paper a novel series connection algorithm is proposed, which can implement not only the synchronization of the points of turn-on and turn-off time but the dynamic voltage balancing in spite of the difference of each switching characteristics. The proposed method is that the compensated control signal is attained from the voltage feedback signal and applied to the series-connected power transistors independently. Computer simulation and experimental results verify its validity.

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SRM의 최대 토크 운전을 위한 자기동조 제어 (Maximum Torque Operation of SRM by using a Self-tuning Control Method)

  • 서종윤;김광헌;장도현
    • 전력전자학회논문지
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    • 제9권3호
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    • pp.240-245
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    • 2004
  • 본 연구에서는 SRM의 최대 토크 운전을 위한 자기동조 제어방법을 연구하였다. SRM은 비선형적인 특성이 강하여 해석적인 방법으로 특성을 고찰하거나 속도 및 토크 제어가 어려운 단점이 있다. 따라서 본 논문에서는 최대 토크 운전을 위한 적절한 턴-온/오프각 제어를 자기동조방식(self-tuning method)에 의해 결정하는 방식을 제안하였다. 그리고 턴-온/오프각을 제어하기 위해 귀환되는 신호는 각각 엔코더 펄스수와 상전류의 증분값을 사용하였으며, 운전 중에 스스로 적절한 턴-오프각을 먼저 추종하고 다음으로 턴-온각을 추종하게 된다. 턴-온/오프각은 서로 종속적인 관계에 있으므로 최대 토크 값을 유지하기 위한 턴-온/오프각을 실시간 자기동조방식으로 제어하였으며, 실험을 통해 제안된 방식이 타당함을 확인하였다.

양성자 조사법에 의한 PT-IGBT의 Turn-off 스위칭 특성 개선 (Improvement of Turn-off Switching Characteristics of the PT-IGBT by Proton Irradiation)

  • 최성환;이용현;권영규;배영호
    • 한국전기전자재료학회논문지
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    • 제19권12호
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    • pp.1073-1077
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    • 2006
  • Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. The I-V, breakdown voltage, and turn-off delay time of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. For proton irradiated device, the breakdown voltage and the on-state voltage were 733 V and 1.85 V which were originally 749 V and 1.25 V, respectively. The turn-off time has been reduced to 170 ns, which was originally $6{\mu}s$ for the un-irradiated device. The proton irradiated device was superior to e-beam irradiated device for the breakdown voltage and the on-state voltage which were 698 V and 1.95 V, respectively, nevertheless turn-off time of proton irradiated device was reduced to about 60 % compared to that of the e-beam irradiated device.

턴-오프 특성이 향상된 Shorted Anode 수평형 MOS 제어 다이리스터 (A shorted anode lateral MOS controlled thyristor with improved turn-off characteristics)

  • 김성동;한민구;최연익
    • 대한전기학회논문지
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    • 제45권4호
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    • pp.562-567
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    • 1996
  • A new lateral MOS controlled thyristor, named Shorted Anode LMCT(SA-LMCT), is proposed and analyzed by a two-dimensional device simulation. The device structure employs the implanted n+ layer which shorts the p+ anode together by a common metal electrode and provides a electron conduction path during turn-off period. The turn-off is achieved by not only diverting the hole current through the p+ cathode short but also providing the electron conduction path from the n-base into the n+ anode electrode. In addition, the modified shorted anode LMCT, which has an n+ short junction located inside the p+ anode junction, is also presented. It is shown that the modified SA-LMCT enjoys the advantage of no snap-back behavior in the forward characteristics with little sacrificing of the forward voltage drop. The simulation result shows that the turn-off times of SA-LMCT can be reduced by one-forth and the maximum controllable current density may be increased by 45 times at the expense of 0.34 V forward voltage drop as compared with conventional LMCT. (author). 11 refs., 6 figs., 1 tab.

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A Sensorless Switched Reluctance Drive System Based on the Improved Simplified Flux Method

  • Li, Zhenguo;Song, Andong;Ahn, Jin-Woo
    • Journal of international Conference on Electrical Machines and Systems
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    • 제1권4호
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    • pp.477-482
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    • 2012
  • This paper describes a new rotor position sensorless control method for SRM drives based on an improved simplified flux linkage method. In the traditional simplified flux linkage method, every phases take turns conduction and current chopping control method is used. Every phases take turns conduction means turning on the incoming working phase while turning off the working phase. This conduction mode causes coupling between turn-on and turn-off angles, which goes against optimal efficiency or torque ripple minimization with sensorless speed control. In the improved simplified flux linkage method, turn-off angle is calculated by flux loop, the turn-on angle can be given arbitrarily and has no relations with the turn-off angle, and the current chopping control method is used. The speed and rotor position can be estimated then. Finally, a sensorless SRM speed control system and an experiment platform with DSP are built and validity of this method is confirmed.

Zero-Current-Switching in Full-Bridge DC-DC Converters Based on Activity Auxiliary Circuit

  • Chu, Enhui;Lu, Ping;Xu, Chang;Bao, Jianqun
    • Journal of Power Electronics
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    • 제19권2호
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    • pp.353-362
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    • 2019
  • To address the problem of circulating current loss in the traditional zero-current switching (ZCS) full-bridge (FB) DC/DC converter, a ZCS FB DC/DC converter topology and modulation strategy is proposed in this paper. The strategy can achieve ZCS turn on and zero-voltage and zero-current switching (ZVZCS) turn off for the primary switches and realize ZVZCS turn on and zero-voltage switching (ZVS) turn off for the auxiliary switches. Moreover, its resonant circuit power is small. Compared with the traditional phase shift full-bridge converter, the new converter decreases circulating current loss and does not increase the current stress of the primary switches and the voltage stress of the rectifier diodes. The diodes turn off naturally when the current decreases to zero. Thus, neither reverse recovery current nor loss on diodes occurs. In this paper, we analyzed the operating principle, steady-state characteristics and soft-switching conditions and range of the converter in detail. A 740 V/1 kW, 100 kHz experimental prototype was established, verifying the effectiveness of the converter through experimental results.

Three-Terminal Hybrid-aligned Nematic Liquid Crystal Cell for Fast Turn-off Switching

  • Baek, Jong-In;Kim, Ki-Han;Kim, Jae-Chang;Yoon, Tae-Hoon
    • Journal of Information Display
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    • 제10권1호
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    • pp.16-18
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    • 2009
  • A three-terminal hybrid-aligned nematic liquid crystal (3T-HAN LC) cell capable of fast turn-off switching is proposed in this paper. By employing the relaxation process initiated by an electric-field pulse, a fast turn-off time of less than 1 ms can be obtained through optically hidden relaxation. A low operating voltage and high transmittance were confirmed through simulations and experiments.

양성자 조사법에 의한 PI-IGBT의 Turn-off 스위칭 특성 개선 (Improvement of Turn-off Switching Characteristics of the PT-IGBT by Proton Irradiation)

  • 최성환;이용현;이종헌;배영호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.22-23
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    • 2006
  • Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. Characterization of the device was performed by I-V, breakdown voltage, threshold voltage, and turn-off delay time measurement. For irradiated device by 5.56 MeV energy, the breakdown voltage and the threshold voltage were 730 V and 6.5~6.6 V, respectively. The turn-off time has been reduced to 170 ns, which was original $6\;{\mu}s$ for the un-irradiated device.

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대용량 IGBT 스위칭 시 과전압 제한을 위한 향상된 게이트 구동기법 (An Improved Gate Control Scheme for Overvoltage Clamping Under High Power IGBTs Switching)

  • 김완중;최창호;이요한;현동석
    • 전력전자학회논문지
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    • 제3권3호
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    • pp.222-230
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    • 1998
  • 본 논문에서는 스너버 회로를 사용하지 않고 턴-온시 역회복 전류의 영향과 턴-오프 시 구동되는 IGBT에 발생하는 과전압을 제한할 수 있는 새로운 IGBT 게이트 구동회로를 제안한다. 제안하는 턴-온 게이트 구동기법은 턴-온 지연 시간을 증가시키지 않고 게이트-에이터 전압이 문턱전압 이상이 되면 IGBT의 입력 커패시턴스를 증가시킴으로써 게이트-에이터 전압의 증가율을 감소시키는 특징을 갖는다. 제안하는 턴-오프 게이트 구동기법은 전류의 크기에 따라 과전압을 제한하여 단락사고와 같은 대전류가 흐르는 경우 더욱 효과적으로 과전압을 제한하는 특징을 가진다. 또한, 여러 가지 조건에서 실험을 수행하여 제안한 IGBT 게이트 구동회로의 타당성을 검증한다.

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Optimal Excitation Angles of a Switched Reluctance Generator for Maximum Output Power

  • Thongprasri, Pairote;Kittiratsatcha, Supat
    • Journal of Electrical Engineering and Technology
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    • 제9권5호
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    • pp.1527-1536
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    • 2014
  • This paper investigates the optimal values of turn-on and turn-off angles, and ratio of flux linkage at turn-off angle and peak phase current positions of optimal control for accomplishing maximum output power in an 8/6 Switched Reluctance Generator (8/6 SRG). Phase current waveform is analyzed to determine optimal excitation angles (optimal turn-on and turn-off angles) of the SRG for maximum output power which is applied from a nonlinear magnetization curve in terms of control variables (dc bus voltage, shaft speed, and excitation angles). The optimal excitation angles in single pulse mode of operation are proposed via the analytical model. Simulated and experimental results have verified the accuracy of the analytical model.