• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2003년도 춘계학술대회논문집
• /
• pp.1026-1031
• /
• 2003

Numbers of people living in high rise apartments are growing due to the overcrowding in urban area. Acoustic environment in those residential buildings has been seriously deteriorated by the increase of wheeled transports. Commonly used sound barriers have a limitation in controlling noise influencing higher part of a residential building. The use of noise barrier tunnels can be an alternative to supplement the defects of conventional noise barriers. But intensive measurements on noise levels at apartments vicinity of current noise barrier tunnels show that the tunnel now has a limited advantage on reducing the noise levels from arterial roads. The present work aims at providing an useful design tool In designing noise barrier tunnels for residential areas adjacent to roads. Number of field measurements, scale model measurements, and computer simulations were performed to ensure whether the prediction from scale model and computer simulation are appropriate. Result shows that the predictions from scale models and computer simulations could be valid prediction tools for designing sound barrier tunnels.

• 한국화재소방학회논문지
• /
• 제30권5호
• /
• pp.9-17
• /
• 2016

중규모 도로터널의 경우 제연설비 설치가 의무화 되어있지 않기 때문에 화재가 발생할 경우 이용객들이 많은 피해를 입을 수 있다. 따라서 본 연구에서는 연장 1,000 m 2차로 일방통행방식의 도로터널을 대상으로 3차원 수치해석, 정량적 위험도 평가를 통해 제연경계벽이 설치되지 않을 때와 설치간격이 100, 150, 200, 250 m일 때 화재에 의하여 발생되는 연기류 등이 시간에 따른 확산을 분석하였다. 그 결과 중규모 도로터널에 제연경계벽을 설치할 경우 설치하지 않은 경우보다 화재로부터 발생되는 고온의 공기와 독성가스의 확산이 지연되는 것을 확인할 수 있었다. 또한 수치해석 대상 중에서 제연경계벽의 설치간격이 100 m인 경우 화재로 인해 발생된 고온의 공기와 독성가스의 확산이 다른 경우보다 많이 지연되어 터널 이용객이 피난하는데 가장 적합한 것으로 나타났다.

• International journal of advanced smart convergence
• /
• 제8권4호
• /
• pp.161-168
• /
• 2019

Traffic accidents in tunnel can lead to large traffic accidents due to narrow and dark road characteristics. Therefore, special care of the driver is required when is driving in a tunnel. However, accidents can happen at any time. In the event of an accident, a narrow road structure may lead to a second accident. Therefore, all facilities installed inside the tunnel should be allowed to minimize damage in the event of an accident. We confirmed the safety of the collision target through the action of the sedan, Sport Utility Vehicle (SUV) and truck when the vehicle crashed into a stairway installed on the tunnel emergency escape route, and when a concrete barrier or guard rail was installed in front of the stairway. The behavior of the vehicle has resulted in a total of three results: rollover or rollover, change of speed and angle of the vehicle after collision. The sedan and SUV were the most secure when colliding with the guardrail, but considering the truck as a whole, concrete barriers were judged to be the most suitable for minimizing damage from the first accident and reducing the risk of the second accident.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.127-128
• /
• 2008

The electrical characteristics of VARIOT (variable oxide thickness) with various $HfO_2$ thicknesses on thin $SiO_2$ or $Al_2O_3$ layer were investigated. Especially, the charge trapping characteristics of $HfO_2$ layer were intensively studied. The thin $HfO_2$ layer has small charge trapping characteristics while the thick $HfO_2$ layer has large memory window. Therefore, the $HfO_2$ layer is superior material and can be applied to charge storage as well as tunneling barrier of the non-volatile memory applications.

• 한국재료학회지
• /
• 제13권4호
• /
• pp.233-238
• /
• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

• 한국전자현미경학회:학술대회논문집
• /
• 한국현미경학회 2004년도 제35차 춘계학술대회
• /
• pp.93-93
• /
• 2004

• Journal of Magnetics
• /
• 제7권3호
• /
• pp.63-71
• /
• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.196-197
• /
• 2010

NAND형 charge trap flash (CTF) non-volatile memory (NVM) 소자가 30nm node 이하로 고집적화 되면서, 기존의 SONOS형 CTF NVM의 tunnel barrier로 쓰이는 SiO2는 direct tunneling과 stress induced leakage current (SILC)등의 효과로 인해 data retention의 감소 등 물리적인 한계에 이르렀다. 이에 따라 개선된 retention과 빠른 쓰기/지우기 속도를 만족시키기 위해서 tunnel barrier engineering (TBE)가 제안되었다. TBE NVM은 tunnel layer의 전위장벽을 엔지니어드함으로써 낮은 전압에서 전계의 민감도를 향상 시켜 동일한 두께의 단일 SiO2 터널베리어 보다 빠른 쓰기/지우기 속도를 확보할 수 있다. 또한 최근에 각광받는 high-k 물질을 TBE NVM에 적용시키는 연구가 활발히 진행 중이다. 본 연구에서는 Si3N4와 HfAlO (HfO2 : Al2O3 = 1:3)을 적층시켜 staggered의 새로운 구조의 tunnel barrier Capacitor를 제작하여 전기적 특성을 후속 열처리 온도와 방법에 따라 평가하였다. 실험은 n-type Si (100) wafer를 RCA 클리닝 실시한 후 Low pressure chemical vapor deposition (LPCVD)를 이용하여 Si3N4 3 nm 증착 후, Atomic layer deposition (ALD)를 이용하여 HfAlO를 3 nm 증착하였다. 게이트 전극은 e-beam evaporation을 이용하여 Al를 150 nm 증착하였다. 후속 열처리는 수소가 2% 함유된 질소 분위기에서 $300^{\circ}C$와 $450^{\circ}C$에서 Forming gas annealing (FGA) 실시하였고 질소 분위기에서 $600^{\circ}C{\sim}1000^{\circ}C$까지 Rapid thermal annealing (RTA)을 각각 실시하였다. 전기적 특성 분석은 후속 열처리 공정의 온도와 열처리 방법에 따라 Current-voltage와 Capacitance-voltage 특성을 조사하였다.

• 한국자기학회지
• /
• 제13권2호
• /
• pp.47-52
• /
• 2003

DC 마그네트론 스파터법과 RLSA(Radial Line Slot Antenna)을 이용한 마이크로파 여기 프라즈마를 이용하여 Ta/Cu/Ta/NiFe/Cu/Mn$_{75}$Ir$_{25}$/ $Co_{70}$Fe$_{30}$/Al-oxide 구조의 접합을 제조한 후, contact-mode AM(Atomic Force Microscope)을 이용하여 Al 산화막의 국소전도 특성의 평가를 수행하였다. AFM 동시전류측정으로부터, 얻어지는 표면상과 전류상은 대응하지 않는다. 국소 전류-전압(I-V)의 측정 결과, 전류상은 절연층의 barrier height의 분포를 나타내고 있다는 것을 알았다.다.다.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2003년도 somma/kms meeting
• /
• pp.93-93
• /
• 2003