• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2002년도 춘계연구발표회 논문개요집
• /
• pp.48-49
• /
• 2002

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2011년도 자성 및 자성재료 국제학술대회
• /
• pp.46-47
• /
• 2011

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 1998년도 추계학술발표회 초록집
• /
• pp.33-34
• /
• 1998

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2005년도 하계학술연구발표회 논문개요집
• /
• pp.106-107
• /
• 2005

• International Journal of Railway
• /
• 제5권2호
• /
• pp.55-64
• /
• 2012

Subject of the paper is a particular configuration of overhead line, in which noise barrier structure is used as supports of the catenary instead of standard poles. This configuration is foreseen in case the noise barrier position is in conflict with the poles location. If the catenary is supported by the noise barrier, the motion that the latter undergo due to wave pressure associated to train transit is transmitted to the overhead line, so that potentially it influences the interaction between the catenary itself and the pantograph of the passing train. The paper focuses on the influence of such peculiar configuration on the quality of the current collection of high speed pantograph, for single and double current collection. The study has been carried out first with an experimental investigation on the pressure distribution on noise barrier, both in wind tunnel and with in-field tests. Subsequently a numerical analysis of the dynamics of the barrier subjected to the wave pressure due to train transit has been carried out, and the output of such analysis has been used as input data for the simulation of the pantograph-dynamic interaction at different speeds and with front or rear pantograph in operation. Consideration of structural modifications was then highlighted, in order to reduce the influence on the contact loss percentage.

• 한국자기학회지
• /
• 제16권2호
• /
• pp.136-139
• /
• 2006

자기터널접합은 일반적으로 $250^{\circ}C$ 이상의 온도에서 터널자기저항비의 저하가 발생하는데 이는 반강자성체로 사용된 IrMn 중 Mn이 강자성체인 CoFe 및 터널배리어로의 내부확산에 기인한다. 자기터널접합의 열적 안정성을 향상시키기 위하여 나노산화층을 삽입하여 Mn의 확산을 제어하였다. CoNbZr 4/CoFe 10/IrMn 7.5/CoFe 3/터널배리어/CoFe 3/CoNbZr 2(nm)와 같은 자기터널접합을 기본구조로 하여 각각의 층에 나노산화층을 삽입하여 열적안정성 및 전자기적 특성을 비교 분석 하였다. 나노산화층의 삽입에 의해 터널자기저항비, 자기터널접합의 표면 평활도 및 열적안정성이 향상되었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.134-134
• /
• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• 한국BIM학회 논문집
• /
• 제11권4호
• /
• pp.31-41
• /
• 2021

Digital twins between "BIM Digital Model-Physical Prototype Model" will be built for Noise Barrier tunnel(NBT) that meet the definition of N.G smart city facilities derived from previous studies to build a data flow that connects data at each stage of design, construction, and operation. In this process, BIM design automation tools are created and utilized, and consistent transmission of member and attribute data is performed by converting them into IFC format. Through this, the purpose is to improve the labor-intensive environment required from the design stage of the NBT and to consistently maintain the information required for subsequent production and construction. This includes achieving changes in the construction industry based on digital transformation by unifying various data formats used differently for each industry from design to operation. In addition, it demonstrates that information exchange in the maintenance and management stages is possible based on the data exchange of the established digital twin and aims to improve the existing labor-intensive environment and expand operability between digital and physical information. As suggested in previous studies, the implementation of digital twins in these N.G smart city facilities includes the possibility of building an environment that adds to the possibility of high value-added product platforms as well as the function of big data platforms targeting existing smart cities.

• Computers and Concrete
• /
• 제6권1호
• /
• pp.79-93
• /
• 2009

In the present paper, a methodology has been presented for the reliability assessment of concrete barriers that lie at a certain depth in the soil, and a missile (a rigid projectile) impacts the top of the soil cover normally, and subsequently after penetrating the soil cover completely it hits the barrier with certain striking velocity. For this purpose, using expressions available in the literature, striking velocity of missile at any depth of soil has been derived and then expressions for the depths of penetration in crater and tunnel region of concrete barrier have been deduced. These depths of penetration have been employed for the derivation of limit state functions. Using the derived limit state functions reliability assessment of underground concrete barrier has then been carried out through First Order Reliability Method (FORM). To study the influence of various random variables on barrier reliability, sensitivity analysis has also been carried out. In addition, a number of parametric studies is conducted to obtain the results of practical interest.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
• /
• pp.133-134
• /
• 2004