• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.357-357
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• 2008

에피성장된 Fe/GaAs 적층구조에서의 스핀 주입 실험을 하였다. Fe와 GaAs 사이에 Schottky tunnel barrier를 형성시키기 위하여 높게 도핑된 GaAs 층을 channel 층 위에 성장하였다. 스핀전달에 의한 chemical potential 차이만을 검출하기 위해서 전압 측정 단자 사이에 전류 흐름이 포함되지 않는 non-local 측정방법을 사용하였다. 그 결과 두 강자성 전극이 반평행한 구간에서 dip이 나타나는 것을 확인할 수 있었다.

• Journal of Magnetics
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• 제6권3호
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• pp.90-93
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• 2001

Co/$Al_O_3$/NiFe and CO/$Al_O_3$/Co tunnel junctions were fabricated by a radio frequency magnetron sputtering at room temperature with hard mask on glass and $4^{\circ}$ tilt cut Si (111) substrates. The barrier layer was formed through two steps. After the Al layer was deposited, it was oxidized in the chamber of a reactive ion etching system (RIE) with $O_2$plasma at various conditions. The dependence of the TMR value and junction resistance on the thickness of Al layer (before oxidation) and oxidation parameters were investigated. Magnetoresistance value of 7% at room temperature was obtained by optimizing the Al layer thickness and oxidation conditions. Circular shape junctions on $4^{\circ}$tilt cut Si (111) substrate showed 4% magnetoresistance. Photovoltaic energy conversion effect was observed with the cross-strip geometry junctions on Si substrate.

• Journal of Magnetics
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• 제14권1호
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• pp.11-14
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• 2009

We investigated the I-V curves and differential tunneling conductance of two, CoFeB/MgO/CoFeB-based, magnetic tunnel junctions (MTJs): one with a low tunneling magnetoresistance (TMR; 22%) and the other with a high TMR (352%). This huge TMR difference was achieved by different MgO sputter conditions rather than by different annealing or deposition temperature. In addition to the TMR difference, the junction resistances were much higher in the low-TMR MTJ than in the high-TMR MTJ. The low-TMR MTJ showed a clear parabolic behavior in the dI/dV-V curve. This high resistance and parabolic behavior were well explained by the Simmons' simple barrier model. However, the tunneling properties of the high-TMR MTJ could not be explained by this model. The characteristic tunneling properties of the high-TMR MTJ were a relatively low junction resistance, a linear relation in the I-V curve, and conduction dips in the differential tunneling conductance. We explained these features by applying the coherent tunneling model.

• 한국BIM학회 논문집
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• 제10권4호
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• pp.11-21
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• 2020

With increasing interest and research on smart cities, there is also an increasing number of studies on urban facilities that can be built within smart cities. According to these studies, smart cities' urban facilities are likely to become high value-added industries. However, the concept of smart city is not clear because it involves various fields. Therefore, in this study, the definition of Next-Generation(N.G) Smart City Facilities with Digital Twin and Digital Chain is carried out through a multidisciplinary approach. Based on this, Next-Generation Smart City Facilities will be divided into High Value-Added Products and Big Data Platforms. Subsequently, the definition of the Digital Chain containing the data flow of the entire process built through the construction of the Digital Twin proceeds. The definitions derived are applied to the Next-Generation Noise Barrier Tunnel to ensure that data is exchanged at the Digital Twin stage, and to review the proposed configuration of the Digital Chain and Data Flow in this study. The platform definition and Digital Chain of Next-Generation Smart City Facilities proposed in this study suggest that it can affect not only the aspects of data management that are currently in the spotlight, but also the manufacturing industry as a whole.

• 한국자기학회지
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• 제22권5호
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• pp.162-166
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• 2012

Fe(100)/MgO(100)/CuPc/Co 자성터널접합 소자의 온도에 따른 전압-전류 특성 변화를 관찰하였다. 화학적 열적 안정성이 비교적 우수한 Cu-Phthalocyanine(CuPc)의 유기박막을 에피성장된 2 nm MgO(100) 박막 위에 2~10 nm 두께로 적층하여 두 강자성 Fe(100)와 Co 전극 사이의 무기-유기 복합 절연격벽으로 이용하였다. 저온 77 K에서 측정된 거대자기저항현상은 CuPc의 두께가 증가함에 따라 급격히 감소하여 10 nm의 CuPc 두께의 경우 전하축적에 의한 쌍안정 스위칭 거동(bistable switching behavior)이 관찰되었다. 이 스위칭 거동은 약 240 K의 온도에 이르면서 점차 소멸되어 상온에서는 정류기와 유사한 비대칭적 전압-전류 특성을 보였다. 이 연구에서 우리는 MgO/CuPc 층상구조에대해 유기물 스핀소자의 절연격벽뿐만 아니라 Polymer Random Access Memory(PoRAM)를 위한 응용 가능성에 대해 논하였다.

• 한국구조물진단유지관리공학회 논문집
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• 제28권4호
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• pp.28-36
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• 2024

이 연구에서는 일반적인 도로터널의 피난안전성을 평가하기 위한 해석적 연구를 수행하였다. Fire Dynamics Simulator(FDS)를 활용하여 화재 크기를 변수로 화재시뮬레이션을 수행하였으며, 도로터널의 피난허용시간을 도출하였다. 또한, Pathfinder를 활용하여 피난연결 통로의 간격과 차단문의 폭을 고려한 피난시뮬레이션을 수행하고, 피난요구시간을 산정하였다. 피난허용시간과 피난요구시간을 비교하여 화재 크기, 피난연결통로의 간격, 차단문의 폭에 따른 도로터널의 피난안전성을 평가하였다. 화재 및 피난 시뮬레이션 결과에 따르면 화재 크기와 피난연결통로의 간격이 증가하고 차단문의 폭이 감소할수록 사상자의 수가 증가하였으며, 차단문의 폭이 1.2 m 이상으로 증가하면 피난연결통로 간격이 증가함에 따라 사상자의 수가 감소하였다.

• Journal of Magnetics
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• 제9권1호
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• pp.13-16
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• 2004

Magnetic tunnel junctions (MTJs) comprising amorphous CoNbZr layers have been investigated. $Co_{85.5}Nb_8Zr_{6.5}$(in at. %) layers were employed to substitute the traditionally used Ta layers with an emphasis given on under-standing underlayer effect. The typical junction structure was $SiO_2/CoNbZr$ or Ta 2/CoFe 8/IrMn 7.5/CoFe 3/Al 1.6 + oxidation/CoFe 3/CoNbZr or Ta 2 (nm). For both as-deposited state and after annealing, the CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayerd one (rms roughness of 0.16 vs. 0.34 nm). CoNbZr-based MTJs was proven beneficial for increasing thermal stability and increasing $V_h$ (the bias voltage where MR ratio becomes half) characteristics than Ta-based MTJs. This is because the CoNbZr-based junctions offer smoother interface structure than the Ta-based one.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2014년도 추계학술대회 논문집
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• pp.125-130
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• 2014

High speed railroad car and high-rise apartment with development of railway technology cause different problems of noise contrary to the previous generation. It is the most efficient noise reduction countermeasure but we studied that is the way on noise propagation with sound proof wall or sound proof tunnel around railroad. But if it were railroad on bridge, additional cost which is more expensive than installing one on the ground is needed. So sound insulation material considering reducing weight of recent soundproof facilities must be selected. It is in this study that predicted and analyzed acoustical and structural effect for noise reduction by installing soundproof tunnel. If it were departmentalized into additional study, could be able to expect noise reduction effect of sound proof tunnel establishment on the bridge.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2003년도 가을 학술논문집
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• pp.315-321
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• 2003

본 연구에서는 고준위 방사성폐기물 심지층 처분시설의 규모 및 layout 설정에 필요한 요소인 처분터널 및 처분공 간격에 대한 분석을 수행하였다. 이를 위하여, 기준 처분개념 및 공학적 방벽개념을 바탕으로 처분터널 및 처분공 단면을 설정하고, 단층 및 복층 개념에 따른 처분동굴의 구조적, 열적 안정성을 분석하였다. 분석 결과를 바탕으로 설계에 있어서 주요한 인자 중의 하나인 굴착량을 최소화할 수 있는 처분동굴 및 처분공 간격을 제안하였다. 향후, 부지에 대한 불확실성을 줄이기 위하여 정확한 부지특성 자료를 통한 상세한 분석이 필요하다.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.934-940
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• 2001

Magnetic properties were investigated for Si/SiO$_2$/NiFe(300 )/A1$_2$O$_3$(t)/Co(200 ) junction related with the parameters of $Al_2$O$_3$. Insulating $Al_2$O$_3$ layer was formed by depositing a 5~40 thick Al layer, followed by a 90~120s RF plasma oxidation in an $O_2$ atmosphere. Magnetoresistance was not observed for tunnel junction with 5~10 thick Al layer, but magnetoresistance was observed large for tunnel junction with 15~40 thick Al layer. Oxidation time did not largely influence magnetoresistance. Tunnel magnetoresistance effect depended on magnetization behavior of two ferromagnetic layers. Tunneling junction was confirmed through nonlinear I-V curve. In this work, tunneling magnetoresistance(TMR) up to 30 % was observed. This apparent TMR is an artifact of the nonuniform current flow over the junction in the cross geometry of the electrodes.