• Journal of the Korean Society for Precision Engineering
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• v.22 no.8 s.173
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• pp.92-99
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• 2005

Tungsten heavy metal is characterized by a high density and novel combination of strength and ductility. Among them, 90W-7Ni-3Fe is used for applications, where the high specific weight of the material plays an important role. They are used as counterweights, rotating inertia members, as well as fur defense purposes(kinetic energy Penetrators, etc.). Because of these applications, it is essential to detemine the dynamic characteristics of tungsten alloy. In this paper, Explicit FEM(finite element method) is employed to investigate the dynamic characteristics of tungsten heavy metal under base of stress wave propagation theory for SHPB, and the model of specimen is divided into two parts to understand the phenomenon that stress wave penetrates through each tungsten base and matrix. This simulation results were compared to experimental one and through this program, the dynamic stress-strain curve of tungsten heavy metal can be obtained using quasi static stress-strain curve of pure tungsten and matrix.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.126-134
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• 1996

Tungsten silicide films were deposited on the phosphorus-doped poly-Si/SiO$_{2}$/Si-substrates by LPCVD (low pressue chemical vapor deposition). The formation and various properties of tungsten silicide processed by furnace annealing in N$_{2}$ ambient were evaluated by using XRD. AFM, 4-point probe and SEM. And the redistribution of phosphorus atoms has been observed by SIMS. The crystal structure of the as-deposited tungsten silicide films were transformed from the hexagonal to the tetragonal structure upon annealing at 550.deg. C. The surface roughness of tungsten polycide films were found to very smoothly upon annelaing at 850.deg. C and low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide films are measured to be 2.4 .ohm./ㅁafter furnace annealing at 1100.deg. C, 30min. It was found that the sheet resistance of tungsten polycide films upon annealing above 1050.deg. C were independant on the phosphorus concentration of polysilicon layer and furnace annealing times. An out-diffusion of phosphorus impurity through tungsten silicide film after annealing in $O_{2}$ ambient revealed a remarkably low content of dopant by oxide capping.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.3
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• pp.289-294
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• 2021

Tungsten (W) is used as a facing material for nuclear fusion reactors, and it is used in conjunction with structural materials such as copper alloy (CuCrZr), graphite, or stainless steel. On the other hand, since tungsten is a material with a high melting point, a method that can be manufactured at a lower temperature is important. Therefore, in this study, tungsten, which is a facing material, was attempted to be manufactured using a pressure sintering method. Material properties of sintered tungsten materials were analyzed for each solvent using two types of solvents, acetone and polyethylene glycol. The sintered tungsten material using acetone as a solvent exhibited a hardness value of about 255 Hv, and when polyethylene glycol was used, a hardness value of about 200 Hv was shown. The flexural strength of the sintered tungsten material was 870 MPa and 307 MPa, respectively, when acetone and polyethylene glycol were used as solvents. The sintered tungsten material using acetone as a solvent caused densification between particles, which served as a factor of increasing the strength.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.2-243.2
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• 2016

Tungsten (W) is recently gaining attention as a potential candidate to replace Cu in semiconductor metallization due to its expected improvement in material reliability and reduced resistivity size effect. In this study, the impact of electron scattering at grain boundaries in a polycrystalline W thin film was investigated. Two nominally 300 nm-thick films, a (110)-oriented single crystal film and a (110)-textured polycrystalline W film, were prepared onto (11-20) Al2O3 substrate and thermally oxidized Si substrate, respectively in identical fabrication conditions. The lateral grain size for the polycrystalline film was determined to be $119{\pm}7nm$ by TEM-based orientation mapping technique. The film thickness was chosen to significantly exceed the electron mean free path in W (16.1 and 77.7 nm at 293 and 4.2 K, respectively), which allows the impact of surface scattering on film resistivity to be negligible. Then, the difference in the resistivity of the two films can be attributed to grain boundary scattering. quantitative analyses were performed by employing the Mayadas-Shatzkes (MS) model, where the grain boundary reflection coefficient was determined to be $0.42{\pm}0.02$ and $0.40{\pm}0.02$ at 293 K and 4.2 K, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.33.1-33.1
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• 2009

To date, nanostructured tungsten oxides with a variety of stoichiometries, such as WO3, WO2.9, W18O49, and WO2, have been prepared, because they are promising candidates for applications such as gas sensors, photocatalysts, electrochromic devices, and field emission devices. Among them, W18O49 and WO2 have been widely studied due to their outstanding chemical sensing, catalytic, and electron emissive properties. Here we report, for the first time, a one-pot solution-phase route to synthesizing a novel composite hierarchical hollow structure without adding catalysts, surfactants, or templates. The products, consisting of a WO2 hollow core sphere surrounded by a W18O49 nanorod shell (yielding a sea urchin-like structure), were generated as discrete structures via Ostwald ripening. To our knowledge, this type of composite hierarchical core/shell structure has not been reported previously. The morphological evolution and the detailed growth mechanism were carefully studied. We also demonstrate that the size of the hollow urchins is readily tunable by controlling the reactant concentrations.Interestingly, although bulk tungsten oxides are weakly paramagnetic or diamagnetic, the as-prepared products show unusual ferromagnetic behavior atroom temperature. The urchin structures also show a very high Brunauer-Emmet-Teller (BET) surface area, suggesting that they may potentially be applied to chemical sensor or effective catalyst technologies.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.130-132
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• 2005

Tungsten carbon nitride (W-C-N) thin films were produced by reactive radio frequency (RF) magnetron sputter-ing of tungsten in $Ar-N_2$ gas mixture. The effects of the variation of nitrogen partial pressure on the composition, and structural properties of these films as well as the influence of post-deposition annealing have been studied. When $La_{0.67}Sr_{0.33}MnO_3$ was coated on the W-C-N/Si substrate, coercivity ($H_c$) and magnetization at room temperature shows 58.73 Oe, and 29.4 emu/cc, respectively. In order to improve the diffusion barrier characteristics, we have studied the impurity behaviors to control the ratios of nitrogen and carbon concentrations.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.386-386
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• 2013

반도체 소자의 소형화, 고집적화로 박막의 다층화 및 선폭의 감소 등의 복잡한 제조 공정이 불가피하고, 따라서 공정 중 실리콘 웨이퍼와 금속 박막사이의 확산을 방지하기 위한 많은 연구가 이루어지고 있다. 하지만 현재까지의 연구는 확산방지막의 nano-mechanics 특성 분석에 대한 연구는 전무하다. 본 논문에서 tungsten (W)을 주 물질로, nitrogen (N)을 첨가한 확산방지막을 질소 유량을 2.5, 5, 7.5, 10 sccm으로 변화시켜가면서 rf magnetron sputter 방법으로 tungsten-nitride (W-N) 박막을 증착하였다. 박막의 기본 물성인 증착율, 비저항 및 결정학적 특성을 ${\beta}$-ray, 4-point probe, X-ray diffraction (XRD)를 이용하여 측정하였고, 측정결과 증착 중 질소 유량이 증가할수록 W-N 박막의 비저항은 증가하였고 반대로 증착율과 결정성은 감소하였다. 이는 기존의 연구 결과와 비교하여 일치한 결과로 증착된 박막이 신뢰성을 가짐을 확인하였다. 이후 가장 관심사인 nano-mechanics 특성은 nano-indenter를 이용하여 측정하였다. 측정 결과 시료는 증착 중 질소 유량이 2.5 sccm인 시료를 기준으로 5 sccm 포함된 박막에서 load force-depth 그래프가 급격히 변화하는 경향을 나타내었고, 표면강도(surface hardness)는 10.07 GPa에서 15.55 GPa로 증가하였다. 이후 질소 유량이 7.5 sccm과 10 sccm에서는 12.65 GPa와 12.77 GPa로 질소 유량이 5 sccm 포함된 박막보다 상대적으로 감소하였다. 이는 박막내 결정상으로 존재하는 질소와 비정질 상태로 존재하는 질소의 비율에 의한 것이고, 압축력에 기인하는 스트레스 증가로 판단된다.

• Journal of the Korean Chemical Society
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• v.39 no.11
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• pp.856-862
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• 1995

The tungsten oxo-nitrosyl complexes (n-Bu4N)2[W5O12(NO)2{RC(NH2)NHO}2{RC(NH)NO}2] (R=(CH3)2CH, CH3CH2CH2, CH3SCH2) have been synthesized by the reactions of polyoxotungsten complex (n-Bu4N)2[W6O19] and tungsten dinitrosyl monomeric complex [W(NO)2(acac)(CH3CN)2](BF4) with butylamidoxime derivatives. The prepared complexes have been characterized by elemental analysis, infrared, UV-visible, 1H NMR and 13C NMR spectroscopy. The pentanuclear species was formed by the interaction of the electron-withdrawing {W(NO)2}2+ unit between the two dinuclear tungsten {W2O5}2+ cores. We can estimate to exist large proton interactions viewed from the four doublet in 1H NMR spectrum of (n-Bu4N)2[W5O12(NO)2{(CH3)2CHC(NH2)NHO}2{(CH3)2CHC(NH)NO}2]. We also drew informations of the two different coordination mode and symmetry of the complexes because two ligands appear in 13C NMR spectra instead of four. The {W(NO)2}2+ unit has been cis-form and C2v symmetry in geometric structure.

• Journal of the Korean Society of Radiology
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• v.12 no.2
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• pp.133-138
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• 2018

The measurement of gamma-ray spectrum of $^{nat}W(p,xn)$ reaction with natural tungsten were performed by using a high energy proton generated from a 100-MeV proton linear accelerator of the Korea Multi-purpose Accelerator Complex (KOMAC). Gamma rays generated by various nuclides generated through the nuclide were measured using a gamma-ray spectroscopy system composed of HPGe detector. A gamma-ray standard source was used for energy calibration and efficiency measurement of the detector. Analysis of the gamma rays observed in the measured spectra showed that the radionuclides produced were $^{167}Re$, $^{178}Re$, $^{179}Re$, $^{180}Re$, $^{181}Re$, $^{182}Re$, $^{184}Re$, $^{172}Ta$, $^{174}Ta$, $^{178}Ta$, $^{182}Ta$, $^{184}Ta$, $^{175}W$, $^{176}W$, $^{177}W$ and $^{179}W$. Nuclides were generated. The results of this study will be applied to nuclear fusion, astrophysics, and nuclear medicine applications in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.54-56
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• 2001

The $SiH_4$ soak step is widely used during the CVD Tungsten(W) plug deposition process on the Ti/TiN barrier metal to prevent the $WF_6$ attack to the underlayer metal. We tried to reduce or skip the time of $SiH_4$ soak process to optimize W-plug deposition process on Via. The electrical characteristics including Via resistance and the structure of W film are affected according to $SiH_4$ soak time. The elimination possibility of $SiH_4$ soak process was confirmed in the case of that the CVD W film grows on the stable Ti/TiN underlayer.