• Nuclear Engineering and Technology
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• v.55 no.11
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• pp.4246-4251
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• 2023

The optimized design of a Neutron Activation Analysis (NAA) system, including Delayed Gamma NAA (DGNAA) and Prompt Gamma NAA (PGNAA), has been proposed in this research based on Mevex Linac with 5 MeV electron energy and 50 kW power as a neutron source. Based on the MCNPX 2.6 simulation, the optimized configuration contains; tungsten as an electron-photon converter, BeO as a photoneutron target, BeD₂ and plexiglass as moderators, and graphite as a reflector and collimator, as well as lead as a gamma shield. The obtained thermal neutron flux at the beam port is equal to 2.06 × 10⁹ (# /cm².s). In addition, using the optimized neutron beam, the detection limit has been calculated for some elements such as H-1, B-10, Na-23, Al-27, and Ti-48. The HPGe Coaxial detector has been used to measure gamma rays emitted by nuclides in the sample. By the results, the proposed system can be an appropriate solution to measure the concentration and toxicity of elements in different samples such as food, soil, and plant samples.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.7
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• pp.273-279
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• 2016

This paper deals with a control system with a concentration sensor for Ni-W alloy plating solutions. The printed circuit board market has increased with the development of the electronics industry. Gold consumption has also increased dramatically. Various studies of composite plating solutions have been conducted because of the expense of gold. In comparison, the development of sensors capable of measuring a composite plating solution in real-time is still insufficient. Furthermore, there are few systems that can measure and control the concentration of the solution precisely. This study developed a sensor and system to control the concentration of composite plating solution accurately. The sensors were developed based on a spectrophotometric method and a feedback control method was applied in this system.

• Composites Research
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• v.25 no.6
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• pp.178-185
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• 2012

One of a unique technique in manipulating a multifunctional composite is demonstrated in this study. An electric field is applied to a liquid suspension in order to align the inclusions along with the direction electric field. This is called FAiMTa(Field Aided Micro Tailoring). It makes orthotropic polymer composites by arranging the micro and/or nano size particle inclusions in chain-line formation. Several kinds of particles such as $Al_2O_3$, graphite, CNT(Carbon Nano Tube), W(Tungsten) are tested to verify the effectiveness of the FAiMTa. The particles redistributed in an epoxy suspension and their coupons show that mechanical and thermal properties of orthotropic and random composites containing those particles depend on the trend of particles' alignment. The micro-images of the functional composite from FAiMTa have been captures and their physical properties demonstrate their wide-range and state-of-the-art application for advanced multifunctional composites.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2446-2452
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• 2009

A Ceramic Metal-halide lamp is achieved by adding multiple metals to a basic mercury discharge. Because the vapor pressure of most metals is very much lower than mercury itself, metal-halide salts of the desired metals, having higher vapor pressures, are used to introduce the material into the basic discharge. The metal compounds are usually polyatomic iodides, which vaporize and subsequently dissociate as they diffuse into the bulk plasma. Metals with multiple visible transitions are necessary to achieve high photometric efficiency and good color. Compounds of Sc, Dy, Ho, Tm, Ce, Pr, Yb and Nd are commonly used. The maximum visible efficacy of a Ceramic Metal Halide lamp, under the constant of a white light source, is predicted to be about 450lm/W. This is controlled principally by the chemical fill chosen for a particular lamp. Current these lamps achieve 130lm/W and these life time are the maximum 16,000[hr]. So factors of performance lower are necessary to improve lamp performance. In this paper, we analyzed factors of performance lower by accelerated deterioration test. The lamp was operated with short duration turn-on/turn-off procedure to enhance the effect due to electrode sputtering during lamp ignition. The tested lamp that was operated with a longer turn-on/off(20/20 minutes) showed blackening, changed distance between electrodes and lowered color rendering & color temperature by losses of Dy at 421.18nm, I at 511nm, T1 at 535nm and Na at 588nm compared with the new lamp.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.117-123
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• 2004

A 30 nm $In_{0.7}GaAs$ High Electron Mobility Transistor (HEMT) with triple-gate has been successfully fabricated using the $SiO_2/SiN_x$ sidewall process and BCB planarization. The sidewall gate process was used to obtain finer lines, and the width of the initial line could be lessened to half by this process. To fill the Schottky metal effectively to a narrow gate line after applying the developed sidewall process, the sputtered tungsten (W) metal was utilized instead of conventional e-beam evaporated metal. To reduce the parasitic capacitance through dielectric layers and the gate metal resistance ($R_g$), the etchedback BCB with a low dielectric constant was used as the supporting layer of a wide gate head, which also offered extremely low Rg of 1.7 Ohm for a total gate width ($W_g$) of 2x100m. The fabricated 30nm $In_{0.7}GaAs$ HEMTs showed $V_{th}$of -0.4V, $G_{m,max}$ of 1.7S/mm, and $f_T$ of 421GHz. These results indicate that InGaAs nano-HEMT with excellent device performance could be successfully fabricated through a reproducible and damage-free sidewall process without the aid of state-of-the-art lithography equipment. We also believe that the developed process will be directly applicable to the fabrication of deep sub-50nm InGaAs HEMTs if the initial line length can be reduced to below 50nm order.

• Applied Chemistry for Engineering
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• v.33 no.1
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• pp.64-70
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• 2022

In this study, an experiment was performed by adding Sb during NH3-selective catalytic reduction (NH₃-SCR) while varying calcination temperatures from 400 to 700 ℃ to improve the low temperature denitrification efficiency of VWTi catalyst. As a result, VWSbTi(500) and VWSbTi(600) catalysts corresponding to Sb calcination temperatures of 500~600 ℃ showed the best denitrification performance at low temperatures below 300 ℃. BET, XRD, Raman, XPS, H₂-TPR, and NH₃-TPD analyses were performed In order to confirm physicochemical properties according to the calcination temperature. In the case of VWSbTi(500) and VWSbTi(600), an acid site increased with the generation of W=O species, and superb activity at low temperatures was exhibited due to the excellent redox characteristics and increase in electron density of tungsten. Furthermore, in the case of VWSbTi(700), as the crystalline V₂O₅ structure was formed, the denitrification efficiency decreased. Thus the optimum calcination temperature during Sb addition process was confirmed.

• Korean Journal of Materials Research
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• v.33 no.9
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• pp.372-376
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• 2023

Transparent conductive tungsten (W) doped indium oxide (In₂O₃; IWO) films were deposited at different substrate bias voltage (-V_b) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 V_b, the IWO films showed a lower resistivity of 2.06 × 10^-4 Ωcm. The lowest resistivity observed for the film deposited at -350 V_b could be attributed to its higher mobility, of 31.8 cm²/Vs compared with that (6.2 cm²/Vs) of the films deposited without a substrate bias voltage (0 V_b). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 V_b condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In₂O₃ (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.213-218
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• 2014

An investigation of the influence of $WO_3$ addition with different precursors and preparation methods on the phase formation and selective catalytic reduction (SCR) efficiency of anatase-$TiO_2$ powders has been carried out. An anatase-$TiO_2$ synthesized by precipitation process was used as a catalyst support. For $WO_3(10wt%)/TiO_2$, the W loading to the $TiO_2$ support led to the lower in anatase to rutile transition temperature to ${\sim}900^{\circ}C$ from $1200^{\circ}C$ of the $TiO_2$ support alone. In the case of $WO_3(10wt%)/TiO_2$ SCR powders obtained from a wet process with ammonium meta-tungstate (AMT) precursor, the highest $NO_X$ conversion efficiency was achieved at $450^{\circ}C$ remaining high efficiency at $500^{\circ}C$, while the same composition prepared from a dry process with $WO_3$ addition showed the lowered efficiency with temperature after reaching the efficiency maximum at $350^{\circ}C$. The same tendency has been found that the $V_2O_5(5wt%)-WO_3(10wt%)/TiO_2$ SCR powders obtained from the wet process with AMT precursor has shown the superior $NO_X$ conversion efficiency over 90 % in a wider temperature range of $300{\sim}500^{\circ}C$.

• Journal of the Korean Chemical Society
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• v.36 no.1
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• pp.3-15
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• 1992

Electronic structures and reactivities of the chromium, molybdenum, and tungsten carbene complexes, $(CO)_5Cr=CCHCH_2(XCH_3)\;,\;(CO)_5Mo=CCHCH_2(XCH_3)\;, and\;(CO)_5W=CCHCH_2(XCH_3)$, are studied by means of Extended Huckel calculations. The origin of the M=Ccarbene double bond is clarified from the diagram of the orbital correlation with the fragment orbitals. The ${\sigma}$ bond of the M=Ccarbene double bond is formed by the electron transfer interaction from the HOMO of the carbene to the LUMO of the $(CO)_5M$. The ${\pi}$ bond is formed through the back-transfer of electrons from one of the degenerated d${\pi}$ orbitals to the LUMO of the carbene. The polarization of charge of the M=Ccarbene bond is calculated to be M=Ccarbene for Mo, and W carbenes. The chemical and physical properties of these complexes are resulted from an appreciable positive charge on the carbene carbon. The electrophilic reactivity of the carbene carbon is not charge controlled, but is controlled by the frontier orbital, LUMO.

• Applied Chemistry for Engineering
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• v.34 no.4
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• pp.357-364
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• 2023

Selective catalytic reduction (SCR) is the most effective method for reducing nitrogen oxide emissions, but the operating temperature range of V₂O₅-WO₃/TiO₂ catalysts is narrow (300~400℃). In this study, a new catalyst with an operating temperature range of 200~450℃ was developed. The catalyst poison, ammonium bisulfate, generated during the SCR process can be removed by heating above 350℃. To increase the number of active sites and promote the dispersion of active materials, titanium isopropoxide (TTIP) treatment was performed on the TiO₂ support with various TTIP/TiO₂ mass ratios. Among them, the 5 wt% TTIP loaded catalyst showed improved performance due to higher thermal stability caused by high W dispersion and the formation of V⁵⁺. In addition, the 5 wt% TTIP-loaded catalyst prepared by a one-step co-precipitation method showed greater V-OH and W-OH dispersion and enhanced interactions in contrast to conventional methods, resulting in higher catalytic activity at lower temperatures. This review article aims to provide an accessible explanation for researchers investigating how to improve the surface properties of TiO2 catalysts using TTIP.