• Title/Summary/Keyword: tunable gain

검색결과 64건 처리시간 0.029초

Frequency and Input Impedance Selective Antenna Using Lumped Element for Multi-band Handhold Terminals (집중형 소자를 이용한 공진 주파수 및 입력 임피던스 선택형 다중 대역 튜너블 안테나)

  • Jung, Byung-Woon
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • 제7권2호
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    • pp.50-55
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    • 2008
  • In this paper, multi-band internal antenna which can adjust both resonant frequency and input impedance of antenna as using lumped inductor between shoring plate and ground plane is proposed. The structure of proposed antenna consists of PIFA (Planar Inverted F Antenna) structure and half-wavelength loaded line structure and has two shorting plates and one feeding plate. One shorting plate is shared. The operating frequency bands of designed antenna are GSM, GPS in the PIFA structure and DCS, US-PCS, W-CDMA in half-wave loaded line structure as varying the inductor value in 2.2nH, 3.3nH, and 4.7nH. As varying the inductor value in the shared shorting plate, input impedance of antenna is varied. To minimize the gain variation of antenna as adding lumped element, the inductor value is restricted at maximum of 6.8nH. The maximum gain of proposed antenna is measured as -1.60dBi in the GSM band, -1.16dBi in the GPS band, and 1.41dBi in the DCS/US-PCS/W-CDMA band.

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A Study on Coupling Coefficient and Resonant Frquency tunable Multi-band Internal Antenna (결합계수 및 주파수 튜너블 다중대역 내장형 안테나에 관한 연구)

  • Lee, Moon-Woo;Lee, Sang-Hyun
    • Journal of the Korea Society of Computer and Information
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    • 제15권8호
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    • pp.59-66
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    • 2010
  • In this paper, the internal antenna for mobile communication handset which is able to control both coupling coefficient and resonant frequency without any major modification of radiator and ground plane of antenna. Novel internal antenna with its controllable resonant frequency is presented for triple-band or over mobile handsets. The operating range can include GSM(880~960 MHz), GPS($1,575{\pm}10MHz$), DCS(1,710~1,880MHz), US-PCS(1,850~1,990 MHz), and W-CDMA(1,920~2,170 MHz). The proposed antenna is realized by combination of a half wavelength loaded line antenna and PIFA(Planner Inverted F Antenna). A single shorting and feeding points are used and they are common to both antenna structures. One of two inductors which is placed at each shorting post, one inductor is for adjusts amount of coupling, and the other controlling the resonant frequency in DCS/US-PCS/WCDMA bands. The inductance range for control of input impedance is between 0nH and 6.8nH, and each of gain variation in GSM, GPS and DCS/US-PCS/WCDMA band is under 0.15dBi, 0.73dBi and 0.29dBi. The inductance range for control of the resonant frequency is between 1640MHz and 2500MHz, and each of gain variation in GSM, GPS and DCS/US-PCS/WCDMA band is under 0.46dBi, 0.53dBi and 0.8dBi.

A 4-bit optical true time-delay for phased array antennas using 2×2 optical MEMS switches and fiber-optic delay lines (2×2 광 MEMS 스위치와 광섬유 지연선로를 이용한 위상배열 안테나용 4-비트 광 실시간 지연선로)

  • 정병민;윤영민;신종덕;김부균
    • Korean Journal of Optics and Photonics
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    • 제15권4호
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    • pp.385-390
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    • 2004
  • In this paper, we designed a 4-bit optical true time-delay(TTD) for phased array antennas(PAAs), which is composed of a wavelength-fixed optical source, 2 ${\times}$ 2 optical MEMS switches, and fiber-optic delay lines. A 4-bit TTD with a unit time delay difference of 6 ps for 10-GHz PAAs has been implemented. Measurement results on time delay show an error of -0.4 ps at maximum, corresponding to a radiation angle error of less than 1.63$^{\circ}$. Thus, the TTD implemented in this research performs in excellent agreement with theory. Each TTD line, composed of MEMS switches and fiber-optic delay lines, connected to the corresponding antenna element has insertion loss in between 1.36 ㏈ and 2.40 ㏈ depending upon the setup of the switches. On the other hand, the insertion loss difference between TTD lines was 0.32 ㏈ at maximum for a fixed radiation angle. The TTD structure proposed in this paper might be more reliable and economical than those previously proposed using tunable wavelength sources if proper power equalization either with gain control of RF amplifiers or variable attenuators is achieved.

A Low-Voltage Low-Power Analog Front-End IC for Neural Recording Implant Devices (체내 이식 신경 신호 기록 장치를 위한 저전압 저전력 아날로그 Front-End 집적회로)

  • Cha, Hyouk-Kyu
    • Journal of the Institute of Electronics and Information Engineers
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    • 제53권10호
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    • pp.34-39
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    • 2016
  • A low-voltage, low-power analog front-end IC for neural recording implant devices is presented. The proposed IC consists of a low-noise neural amplifier and a programmable active bandpass filter to process neural signals residing in the band of 1 Hz to 5 kHz. The neural amplifier is based on a source-degenerated folded-cascode operational transconductance amplifier (OTA) for good noise performance while the following bandpass filter utilizes a low-power current-mirror based OTA with programmable high-pass cutoff frequencies from 1 Hz to 300 Hz and low-pass cutoff frequencies from 300 Hz to 8 kHz. The total recording analog front-end provides 53.1 dB of voltage gain, $4.68{\mu}Vrms$ of integrated input referred noise within 1 Hz to 10 kHz, and noise efficiency factor of 3.67. The IC is designed using $18-{\mu}m$ CMOS process and consumes a total of $3.2{\mu}W$ at 1-V supply voltage. The layout area of the IC is $0.19 mm^2$.