• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.3
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• pp.445-453
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• 2000

In this paper, the method of designing an active inductor for MMIC is proposed. The proposed tunable active inductor is composed of a cascade FET with feedback capacitors and resistors. Because of a very low series resistance in the proposed inductor, a very high Q factor can be obtained. Also it has an excellent characteristics suitable for high frequency band. The inductance value can be changed by controlling feedback capacitors, resistors and a bias voltage respectively. When the feedback resistor and parallel resistor within circuits are varied, the inductance value is changed from 0.2 nH to 1.7 nH in the range 1 to 15 GHz. Also we designed bandpass filter using the proposed active inductor and it shows the insertion loss of 0.4 dB and return loss, 20 dB.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.163.2-163.2
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• 2010

We developed a simple method to synthesis a nitrogen doped graphene, nitrogen plasma treated graphene (NPG) sheets thought nitrogen plasma etching of graphene oxide (GO). X-ray photo electron spectroscopy (XPS) study of NPG sheets treated at various plasma conditions reveal that N-doping is classified to 3 kinds of binding configurations. The nitrogen doping concentration is at least 1.5 at % and up to 3 at% with changing of ratio of nitrogen configuration in NPG. Our group demonstrate ultracapacitor with high capacity and extremely durable using a NPG sheets that are comparable to pristine graphene supercapacitor, and pseudocapacitor using polymer and metal oxide with redox reaction, capacitance that are three-times higher, and a cycle life that are extremely stable. We also realized flexible capacitor by using the paper electrode that are coated by NPG sheets. NPG paper capacitor presented almost same performance compare with NPG on a metal substrate, and durability is much more enhanced than that. To additionally explain that how different kind of atoms in graphene layers can act as the ion absorption sites, we simulated the binding energy between nitrogen in graphene layer and ions in electrolyte. Increasing the energy density and long cycle life of ultracapacitor will enable them to compete with batteries and conventional capacitors in number of applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.616-619
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• 2003

This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.203-207
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• 1999

In this paper we report new integration technology developed for three-dimensional metallic microstructures in an arbitrary shape. We have developed the two fabrication methods: Multi-Exposure and Single-Development (MESD) and Sacrificial Metallic Mold(SMM) techniques. Three-dimensional photoresist mold can be formed by the MESD method while unlimited number of structural levels can be realized by the SMM technique. Using these two techniques we have fabricated solenoid inductors and levitated spiral inductors for RF applications. We have achieved peak Q- factors over 40 in the 2-10㎓ range, the highest number among the inductors reported to date. Finally, we propose "On-Chip Passives" as a post IC process for monolithic integration of inductors, tunable capacitors, microwave switches, transmission lines, and mixers and filters toward future single-chip transceiver integration.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.5
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• pp.27-37
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• 1999

A CMOS ReadOut Integrated Circuit (ROlC) for InfraRed Focal Plane Array (IRFPA) detector is presented, which is a key component in uncooled thermal imaging systems. The ROIC reads out signals from $64\times64$ Barium Strontium Titanate (BST) infrared detector array, then outputs pixel signals sequentially after amplifying and noise filtering. Various design requirements and constraints have been considered including impedance matching, low noise, low power dissipation and small detector pitch. For impedance matching between detector and pre~amplifier, a new circuit based on MOS diode structure is devised, which can be easily implemented using standard CMOS process. Also, tunable low pass filter with single~pole is used to suppress high frequency noise. In additions, a clamping circuit is adopted to enhance the signal~to-noise ratio of the readout output signals. The $64\times64$ IRFPA ROIC is designed using $0.65-\mu\textrm{m}$ 2P3M (double poly, tripple metal) N~Well CMOS process. The core part of the chip contains 62,000 devices including transistors, capacitors and resistors on an area of about $6.3-mm\times6.7-mm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.157-160
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• 2004

Ferroelectric $(Ba_xSr_{1-x})TiO_3$ (BST) thin films have been deposited on (001) MgO single crystals by a pulsed laser deposition (PLD) method. The structure of deposited BST thin films were investigated by an x-ray diffractometer. Calculated c-axis lattice parameters of the BST films exhibit a strong lattice distortion, which was not observed in ceramic BST at room temperature. This lattice distortion of BST has been attributed to strains caused by lattice constant difference between film and substrate, oxygen vacancies in BST film, and thermal expansion difference between film and substrate. Ferroelectric properties at 10 GHz have been measured using a HP 8510C vector network analyzer. Dielectric properties, capacitance tunability and quality factor, of the interdigitaed capacitors fabricated on BST films were calculated from the measured s-parameters. Two distinct behaviors in structural, opitical, and microwave properties of BST films were observed; below and above 200 mTorr of oxygen pressure in the deposition chmber.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1069-1077
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• 2011

In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.304-313
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• 2001

In this research, we investigate wet-etching properties of GaAs in $NH_4OH-H_2O_2-H_2O$, and develop the fabrication method of GaAs microstructures with rectangular cross section using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and cross-section etch profiles of (001) GaAs with 16 different compositions and the undercut rates with 5 different compositions are measured using $NH_4OH-H_2O_2-H_2O$ mixed solutions. From these experimental data, a new GaAs micromachining method in bulk (001) GaAs is proposed, and used to fabricate a released microbridges with a rectangular cross section. The developed GaAs micromachining method can be very useful for low-loss, highly-tunable capacitors for RF components and for integration with GaAs optical components.