• Journal of Information Display
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• v.2 no.3
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• pp.48-53
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• 2001

Carbon nanotube emitters, prepared by screen printing, have demonstrated a great potential towards low-cost, largearea field emission displays. Carbon nanotube paste, essential to the screen printing technology, was formulated to exhibit low threshold electric fields as well as an emission uniformity over a large area. Two different types of triode structures, normal gate and undergate, have been investigated, leading us to the optimal structure designing. These carbon nanotube FEDs demonstrated color separation and high brightness over 300 $cd/m^2$ at a video-speed operation of moving images. Our recent developments are discussed in details.

• Journal of Information Display
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• v.2 no.3
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• pp.72-77
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• 2001

Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

• ETRI Journal
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• v.31 no.5
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• pp.576-584
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• 2009

A novel tunable transconductor is presented. Input transistors operate in the triode region to achieve programmable voltage-to-current conversion. These transistors are kept in the triode region by a novel negative feedback loop which features simplicity, low voltage requirements, and high output resistance. A linearity analysis is carried out which demonstrates how the proposed transconductance tuning scheme leads to high linearity in a wide transconductance range. Measurement results for a 0.5 ${\mu}m$ CMOS implementation of the transconductor show a transconductance tuning range of more than a decade (15 ${\mu}A/V$ to 165 ${\mu}A/V$) and a total harmonic distortion of -67 dB at 1 MHz for an input of 1 Vpp and a supply voltage of 1.8 V.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.866-869
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• 2004

A carbon nanotube field emission display(CNT FED) panel with a 2 inch diagonal size was fabricated by using a screen printing of a prepared photo-sensitive CNT paste and vacuum in-line sealing technology. After a surface treatment of the patterned CNT, only the carbon nanotube tips are uniformly exposed on the surface. The diameter of the exposed CNTs are usually about 20nm. The sealing temperature of the panel was around 390 $^{\circ}C$ and the vacuum level was obtained with $1.4{\times}10^{-5}$torr at the sealing. The field emission properties of the diode type CNT FED panel were characterized Now, we are developing a triode type CNT FED with a self-aligned gate-emitter structure.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1214-1218
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• 2006

We introduced simple fabrication process for field emission devices based on carbon nanotubes (CNTs) emitters. Instead of using the ITO material as a transparent electrode, a metal (Au) with thickness of 5-20nm was used. Moreover, the ITO patterning process was eliminated by depositing metal layer, before the CNT printing process. In addition, the thin metal layer on photo resist (PR) layer was used as UV block. We fabricated the CNT field emission arrays of triode structure with simple process. And I-V characteristics of field emission arrays were measured. The maximum current density of $254{\mu}A/cm2$ was achieved when the gate and the anode voltage was kept 150V and 3000V, respectively. The distance between anode and cathode was kept constant.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.2
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• pp.184-191
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• 1993

Continuous-time integrated filters, implemented in MOS VLSI technology, have been receiving considerable attention. In this paper, a continuous-time fifth order elliptic low-pass MOSFET-C filter has been designed with a cutoff frequency 3,400Hz. First an active RC filter is designed using cascade method which each block can be tunable. And then the resistors of an active RC network are replaced by a linear resistor using NMOS depletion transistors operated in the triode region. This continuous-time MOSFET filter have simpler structure than switched-capacitor filter, so reduce the chip area. The designed MOSFET-C filter characteristics are simulated by PSPICE program.

• Journal of Information Display
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• v.5 no.4
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• pp.18-22
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• 2004

A carbon nanotube field emission display (CNT FED) panel with a 2 inch diagonal size was fabricated through screen printing of a prepared photo-sensitive CNT paste and vacuum in-line sealing technology. After surface treatment of the patterned CNT, only the carbon nanotube tips are uniformly exposed on the surface. The diameter of the exposed CNTs are usually about 20nm. The sealing temperature of the panel is around 390 $^{\circ}C$ and the vacuum level is obtained with $1.4{\times}10^{-5}$torr at the sealing. The field emission properties of the diode type CNT FED panel are characterized. Currently, we are in the process of developing a triode type CNT FED with a self-aligned gate-emitter structure.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.258-262
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• 2005

We report on the field emission properties from vertically aligned carbon nanotubes (CNTs) produced by a triode PECVD with a SiNx capping layer on metal catalyst. It is found that the CNTs density can be controlled by the capping layer thickness and decreases with increasing SiNx thickness. The CNT density of $\~$ 104/$cm^{2}$ exhibited highest electron emission characteristics, the threshold field of 1.2 V/$\mu$m and the current density of 0.17 mA/$cm^{2}$ at 3.6 V/$\mu$m. We have carried out investigation of electron emission stability under ambient gas of N2. The electron emission stability was improved with decreasing CNT density. Under $1\times$$10^{-5}$ Torr ambient pressure, the CNTs in 5 $\mu$m hole show electron emission current higher than $1\times$$10^{-4}$ A/cm2 and it's electron emission uniformity has $2\%$.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.145-145
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• 1999

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.244-247
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• 1999

In this paper, a low voltage CMOS analog four-quadrant multiplier is presented. The proposed multiplier is composed of a pair of transconductor and lowers supply voltage down to $V_{T}$+2 $V_{Ds,sat}$+ $V_{DS,triode}$. The designed analog four-quadrant multiplier have simulated by HSPICE using 0.25${\mu}{\textrm}{m}$ n-well CMOS process with a 1.2V supply voltage. Simulation results show that the THD can be 1.28% at maximum differential input of 0.7 $V_{p-p}$././.