• Title/Summary/Keyword: trilayer

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Influence of Electron Beam Irradiation on the Structural, Optical, and Electrical Properties of ZTO/Ag/ZTO Trilayer Films

  • Eom, Tae-Young;Song, Young-Hwan;Gong, Tae-Kyung;Kim, Daeil;Cheon, Joo-Yong;Cha, Byung-Chul
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.4
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    • pp.217-220
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    • 2017
  • We deposited transparent conductive ZTO/Ag/ZTO trilayer thin films on glass substrates through magnetron sputtering, and then conducted intense electron beam irradiation on their surfaces to investigate the effects of electron irradiation on the structural, optical, and electrical properties of these films. After deposition, we electron irradiated the ZTO/Ag/ZTO films for 10 min at electron energies of 300, 500, and 700 eV. The films that were electron irradiated at 700 eV showed a higher optical transmittance (84.2%) in the visible wavelength region and a lower resistivity ($7.2{\times}10^{-5}{\Omega}cm$) compared with the other films. The figure of merit revealed that the ZTO/Ag/ZTO films that were electron irradiated at 700 eV had a higher optical and electrical performance than the other films prepared in this study.

Interlayer Coupling of CoFe/Cu/NiFe Trilayer Films

  • Baek, Jong-Sung;Lim, Woo-Woung;Lee, Soo-Hyung;Kim, Mee-Yang;Rhee, Jang-Roh
    • Journal of Magnetics
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    • v.5 no.4
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    • pp.139-142
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    • 2000
  • The interlayer coupling between adjacent ferromagnetic layers was examined for CoFe/Cu/NiFe trilayer systems. A series of films of CoFe (20 nm)/Cu($t_{cu}$)/NiFe (20 nm) trilayers with Cu spacer thickness, $t_{cu}$, in the range of 1~10 m was deposited on Si(100) wafers at room temperature by DC magnetron sputtering. In order to understand the dependence of the magnetic interaction between ferromagnetic $Co_{90}Fe_{10}$ (wt.%) and $Ni_{81}Fe_{19}$ (wt.%) layers separated by a nonmagnetic Cu spacer on the Cu layer thickness, we investigated the derivative ferromagnetic resonance (FMR) spectra. The FMR results were analyzed using the model of Layadi and Art-man for interlayer interaction. The interlayer coupling constant decreases in an oscillatory manner as the Cu spacer thickness increases up to 10 nm and approaches zero above 10 nm. The interlayer coupling constant is positive for all samples. Hence, it seems that the exchange coupling between adjacent CoFe and NiFe layers separated by a Cu layer is ferromagnetic.

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Effect of Calcium Doping in Low Angle Grain Boundaries of $YBa_2Cu_3O_{7-\delta}$ on Textured Metal Substrates

  • Kang, B.W.;A. Goyal;F.A. List;D.K. Christen;H. R. Kerchner;S. Sathyamurthy;Lee, D.F.;Martin, P.M.;Koreger, D.M.
    • Progress in Superconductivity
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    • v.4 no.1
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    • pp.10-13
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    • 2002
  • We report the effect of Ca doping in $YBa_2Cu_3O_{7-\delta}$ (YBCO) thin films grown on the Rolling- Assisted, Biaxially Textured Substrates (RABiTS) with the architecture of $CeO_2/YSZ/CeO_2/Ni$. Critical currents of bilayer and trilayer structures of $YBCO/Y_{0.7}Ca_{0.3}Ba_2Cu_3O_{7-\delta}$/(YCaBCO) as well as undoped YBCO for comparison have been measured in a wide range of temperatures and fields. For $6-8^{\circ}$ grain boundaries, 30% Ca-doping in bilayer structure enhances $J_c$ as high as 35%. The enhancement is larger at low temperatures and at magnetic fields. On the other hand, 30% Ca-doping in trilayer structure reduces $J_c$ as high as 60%. Combined with slightly lower $T_c$, this indicates that Ca is overdoped in this structure and degrades GBs.

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Metastable Vortex State of Perpendicular Magnetic Anisotropy Free Layer in Spin Transfer Torque Magnetic Tunneling Junctions

  • You, Chun-Yeol;Kim, Hyungsuk
    • Journal of Magnetics
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    • v.18 no.4
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    • pp.380-385
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    • 2013
  • We find a metastable vortex state of the perpendicular magnetic anisotropy free layer in spin transfer torque magnetic tunneling junctions by using micromagnetic simulations. The metastable vortex state does not exist in a single layer, and it is only found in the trilayer structure with the perpendicular magnetic anisotropy polarizer layer. It is revealed that the physical origin is the non-uniform stray field from the polarizer layer.

SINIS Technology for RSFQ Circuit Fabrication (RSFQ 회로 제작용 SINIS 조셉슨 접합기술)

  • ;;D. Balashov
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2003.10a
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    • pp.103-105
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    • 2003
  • The high speed of RSFQ circuits is based on the self-resetting in the overdamped Josephson junctions. The SIS technology using Nb/A1$_2$O$_3$/Nb trilayer has been successfully adopted as a standard technology. However the newly suggested SINIS technology attracts interest because the junction itself is overdamped without any external shunt, and provides possibility of simplification of RSFQ circuit design and fabrication. In this paper we demonstrate RSFQ circuit fabrication process using SINIS technology.

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