• Journal of the Korean Applied Science and Technology
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• v.25 no.4
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• pp.411-417
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• 2008

A group of new N,N-bis(5-acetylpyridin-2-yl)phenylamine derivatives was synthesized in good yield applying an optimized Buchwald-Hartwig amination protocol. The synthesized compounds showed UV absorption maxima in the range of 320-360 nm, and showed good luminescence at dilute concentrations in the blue region of the spectra (in the range of 480-497 nm). They showed also a bathochromic shift associating the increase in solvent polarity. The synthesized compounds could be investigated for use in OLEDs or as potential monomers for PLEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.55-60
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• 2006

Thermally stable and solution-processable poly(N-arylcarbazole-alt-aniline) copolymers with high structural integrity were synthesized in good yields via palladium-catalyzed polycondensation of aniline with corresponding N-arylcarbazole monomers such as N-(2-ethylhexyloxyphenyl)-3,6-dibromocarbazole,bis[6-bromo-N-(2-ethylhexyloxyphenyl)carbazole-3-yl] and N-(4-(2-ethylhexyl)-3,5-dibromomethylene-phenyl) carbazole, respectively. The optical and electrochemical properties of these copolymers were measured and compared with those of poly(N-alkylcarbazole-alt-aniline) copolymer. All synthesized poly(N-arylcarbazole-alt-aniline) copolymers showed maximum UV-Vis absorption peaks at around 300 nm in THF solution, and exhibited maximum photoluminescence peaks in the blue emission range from 430 to 460 nm. It was also found that poly(N-arylcarbazole-alt-aniline) copolymers had wider band gap energy than poly(N-alkylcarbazole-alt-aniline) copolymer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.11.2-11.2
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• 2011

Polymer based organic photovoltaics have attracted a great deal of attention due to the potential cost-effectiveness of light-weight and flexible solar cells. However, most BHJ polymer solar cells are not thermally stable as subsequent exposure to heat drives further development of the morphology towards a state of macrophase separation in the micrometer scale. Here we would like to show three different approaches for developing new electroactive polymers to improve the thermal stability of the BHJ solar cells, which is a critical problem for the commercialization of these solar cells. For one of the examples, we report a new series of functionalized polythiophene (PT-x) copolymers for use in solution processed organic photovoltaics (OPVs). PT-x copolymers were synthesized from two different monomers, where the ratio of the monomers was carefully controlled to achieve a UV photo-crosslinkable layer while leaving the ${\pi}-{\pi}$ stacking feature of conjugated polymers unchanged. The crosslinking stabilizes PT-x/PCBM blend morphology preventing the macro phase separation between two components, which lead to OPVs with remarkably enhanced thermal stability. The drastic improvement in thermal stabilities is further characterized by microscopy as well as grazing incidence X-ray scattering (GIXS). In the second part of talk, we will discuss the use of block copolymers as active materials for WOLEDs in which phosphorescent emitter isolation can be achieved. We have exploited the use of triarylamine (TPA) oxadiazole (OXA) diblock copolymers (TPA-b-OXA), which have been used as host materials due to their high triplet energy and charge-transport properties enabling a balance of holes and electrons. Organization of phosphorescent domains in TPA-b-OXA block copolymers is demonstrated to yield dual emission for white electroluminescence. Our approach minimizes energy transfer between two colored species by site isolation through morphology control, allowing higher loading concentration of red emitters with improved device performance. Furthermore, by varying the molecular weight of TPA-b-OXA and the ratio of blue to red emitters, we have investigated the effect of domain spacing on the electroluminescence spectrum and device performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.31-32
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• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]