• Title/Summary/Keyword: tri-matching

Search Result 12, Processing Time 0.027 seconds

Memory Efficient Tri-Matching Algorithm (메모리 효율적인 3군 매칭 알고리즘 구현)

  • Kim, Donggil;Jung, Sung Jae
    • Proceedings of the Korean Society of Computer Information Conference
    • /
    • 2020.07a
    • /
    • pp.393-394
    • /
    • 2020
  • 세 군 매칭을 수행하여 관찰 데이터를 구축하고 통계분석에 기반한 연구를 수행하는 경우가 종종 발생한다. 매칭작업은 각 군에 속한 개체의 성향점수를 서로 비교해 거리가 가까운 짝을 찾아야 하므로 카테시안 곱 만큼의 경우의 수를 따져야 하는 문제이고, 메모리 소요가 크다. 특히 세 군 매칭은 세 쌍의 거리가 가까운 triplet을 찾는 문제로, 세 개체 사이에 존재하는 세 개의 거리를 따져야 하기 때문에 메모리 소요가 두 군 매칭에 비해 훨씬 크다. 각 군에 속한 개체가 늘어나면 메모리소요가 기하 급수적으로 늘어나게 된다. R패키지에 포함된 TriMatch함수는 세 군 매칭 수행을 위해 가장 널리 사용되는 프로그램이다. 이 프로그램은 세 개체 사이의 세 개 거리가 가장 짧은 triplet을 찾는 방식으로 구현 되었다. 이 프로그램은 메모리 소요가 매우 커 각 군에 속한 개체의 수가 많아지면 메모리 부족 에러가 발생하는 경우가 많다. 본 연구에서는 세 군 매칭에 소요되는 메모리 소요를 줄일 수 있는 알고리즘을 제안하고자 한다. 이 알고리즘의 구현을 통해 각 군에 속한 개체가 늘어나도 안정적인 세 군 매칭 결과를 얻을 수 있을 것으로 기대한다.

  • PDF

Color Matching in Production of Tri-color Fluorescent Lamp Coated by Single and Double Layer (단일 및 이중도포에 의한 삼파장형광등의 제조시 목표광색의 조합에 관한 연구)

  • 김성래;하백현
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.13 no.1
    • /
    • pp.9-14
    • /
    • 1999
  • One of the IIDSt difficult problems in a tri-band fluorescent lamp manufacture is to search a desired color by an adequate mixing of tri-color phosphors. When a light spectrum of a phosphor is slightly changw or distorted due to process variable or when another spectrum such as from Ar, Kr or a iDosphor of calcium halo-phosphate as a first layer exist, it is even rrnre difficult to search a desired color. In this work, a rapid awuaching rrethod to a desired light color was studied. 1bree single-color fluorescent lamps and three-color-mixed fluorescent lamps with different mixing ratios were prepared and the spectra of these lamps were measured, from which the rrercury and the argon spectra were eliminatffl to obtain the rrndifiw color coordinates. From this rrndifiw color coordinate, h.lIlHl ratios of green and blue to red were correlatffl with their weight ratios. This correlation was awliw to the industrial line for single and double layer coating and proven to be valuable as a desired color matching procWure in tri-color fluorescent lamp manufacture.acture.

  • PDF

Multiband Microstrip-Fed Right Angle Slot Antenna Design for Wireless Communication Systems

  • Rakluea, Paitoon;Anantrasirichai, Noppin;Janchitrapongvej, Kanok;Wakabayashi, Toshio
    • ETRI Journal
    • /
    • v.31 no.3
    • /
    • pp.271-281
    • /
    • 2009
  • This paper presents a novel multiband microstrip-fed right angle slot antenna design technique for multiple independent frequency bands. The new technique uses various slot sizes at various appropriate positions. We first propose a tri-band slot antenna consisting of three right angle slots. Then, a quad-band slot antenna is developed with four right angle slots which achieves slant ${\pm}45^{\circ}$ linear polarization, omnidirectional pattern coverage, good antenna gain, and acceptable impedance bandwidths over all the operating frequency range. Moreover, an open-circuited tuning stub is introduced to achieve good impedance matching. Both proposed antennas are designed on a ground plane of RT/duroid 5880 substrate with a thickness of 1.575 mm. The real measurable results show that the desired frequencies used in wireless communication systems, namely, WLAN and WiMax, are efficiently achieved.

  • PDF

A Miniaturized 2.5 GHz 8 W GaN HEMT Power Amplifier Module Using Selectively Anodized Aluminum Oxide Substrate (선택적 산화 알루미늄 기판을 이용한 소형 2.5 GHz 8 W GaN HEMT 전력 증폭기 모듈)

  • Jeong, Hae-Chang;Oh, Hyun-Seok;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.22 no.12
    • /
    • pp.1069-1077
    • /
    • 2011
  • In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

Design of a GaN HEMT Power Amplifier Using Output Matching Circuit with Arbitrary Harmonic Impedances (임의의 고조파 임피던스를 갖는 출력 정합 회로를 이용한 GaN HEMT 전력증폭기의 설계)

  • Jeong, Hae-Chang;Son, Bom-Ik;Lee, Dong-Hyun;Ahmed, Abdul-Rahman;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.24 no.11
    • /
    • pp.1034-1046
    • /
    • 2013
  • In this paper, a design of a GaN HEMT power amplifier using output matching circuit with arbitrary harmonic impedances is presented. The adopted GaN HEMT device, TGF2023-02 of TriQuint Semiconductor, was packaged in commercial package. The optimal impedances of the GaN HEMT package are extracted from load-pull simulation at package input and output reference planes. The targets of load-pull simulation are the highest output power at fundamental frequency and the highest efficiency at $2^{nd}$ and $3^{rd}$ harmonic frequencies. Because of fixture in the package, the extracted impedances shows arbitrary harmonic impedances. In order to match the optimal impedances, output matchin circuit which has 4 transmission lines is presented. Characteristic impedances and electrical lengths of the transmission lines are mathmatically calculated. The power amplfiier with $54.6{\times}40mm^2$ shows the output power of 8 W at the fundamental frequency of 2.5 GHz, the efficiency above 55 %, and harmonic suppression of above 35 dBc at the $2^{nd}$ and the $3^{rd}$ harmonics.

Internal Pattern Matching Algorithm of Logic Built In Self Test Structure (Logic Built In Self Test 구조의 내부 특성 패턴 매칭 알고리즘)

  • Jeon, Yu-Sung;Kim, In-Soo;Min, Hyoung-Bok
    • Proceedings of the KIEE Conference
    • /
    • 2008.07a
    • /
    • pp.1959-1960
    • /
    • 2008
  • The Logic Built In Self Test (LBIST) technique is substantially applied in chip design in most many semiconductor company in despite of unavoidable overhead like an increase in dimension and time delay occurred as it used. Currently common LBIST software uses the MISR (Multiple Input Shift Register) However, it has many considerations like defining the X-value (Unknown Value), length and number of Scan Chain, Scan Chain and so on for analysis of result occurred in the process. So, to solve these problems, common LBIST software provides the solution method automated. Nevertheless, these problems haven't been solved automatically by Tri-state Bus in logic circuit yet. This paper studies the algorithm that it also suggest algorithm that reduce additional circuits and time delay as matching of pattern about 2-type circuits which are CUT(circuit Under Test) and additional circuits so that the designer can detect the wrong location in CUT: Circuit Under Test.

  • PDF

Design and Fabrication of X-Band GaN HEMT SSPA for Marin Radar System (선박 레이더용 X-대역 300 W급 GaN HEMT 반도체 전력 증폭 장치 설계 및 제작)

  • Heo, John;Jin, Hyeong-Seok;Jang, Ho-Ki;Kim, Bo-Kyun;Cho, Sookhee
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.23 no.11
    • /
    • pp.1239-1247
    • /
    • 2012
  • In this paper, design and fabrication of solid state power amplifier(SSPA) using GaN HEMT chip for X-band frequency are presented. The SSPA consists of the power supply for stable power and the control unit for communication and controlling the internal module, the RF Part to amplify RF signal, In particular the adopted active device for the RF Parts is GaN HEMT Bare chip of TriQuint company, the RF parts consists of pre-stage, drive-stage, main power-stage and each amplifier is designed with input and out matching circuit. The developed power amplifier demonstrated more than 300 W peak output power in condition of 26 % duty, max. pulse width 100us for the X-band frequency( 500 MHz bandwidth) and can apply to marine radar systems.

A Landmark Based Localization System using a Kinect Sensor (키넥트 센서를 이용한 인공표식 기반의 위치결정 시스템)

  • Park, Kwiwoo;Chae, JeongGeun;Moon, Sang-Ho;Park, Chansik
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.63 no.1
    • /
    • pp.99-107
    • /
    • 2014
  • In this paper, a landmark based localization system using a Kinect sensor is proposed and evaluated with the implemented system for precise and autonomous navigation of low cost robots. The proposed localization method finds the positions of landmark on the image plane and the depth value using color and depth images. The coordinates transforms are defined using the depth value. Using coordinate transformation, the position in the image plane is transformed to the position in the body frame. The ranges between the landmarks and the Kinect sensor are the norm of the landmark positions in body frame. The Kinect sensor position is computed using the tri-lateral whose inputs are the ranges and the known landmark positions. In addition, a new matching method using the pin hole model is proposed to reduce the mismatch between depth and color images. Furthermore, a height error compensation method using the relationship between the body frame and real world coordinates is proposed to reduce the effect of wrong leveling. The error analysis are also given to find out the effect of focal length, principal point and depth value to the range. The experiments using 2D bar code with the implemented system show that the position with less than 3cm error is obtained in enclosed space($3,500mm{\times}3,000mm{\times}2,500mm$).

Rheumatoid arthritis is associated with higher 90-day systemic complications compared to osteoarthritis after total shoulder arthroplasty: a cohort study

  • Peter Boufadel;Jad Lawand;Ryan Lopez;Mohamad Y. Fares;Mohammad Daher;Adam Z. Khan;Brian W. Hill;Joseph A. Abboud
    • Clinics in Shoulder and Elbow
    • /
    • v.27 no.3
    • /
    • pp.353-360
    • /
    • 2024
  • Background: Total shoulder arthroplasty (TSA) in patients with rheumatoid arthritis (RA) can present unique challenges. The aim of this study was to compare both systemic and joint-related postoperative complications in patients undergoing primary TSA with RA versus those with primary osteoarthritis (OA). Methods: Using the TriNetX database, Current Procedural Terminology and International Classification of Diseases, 10th edition codes were used to identify patients who underwent primary TSA. Patients were categorized into two cohorts: RA and OA. After 1:1 propensity score matching, postoperative systemic complications within 90 days following primary TSA and joint-related complications within 5 years following anatomic TSA (aTSA) and reverse shoulder arthroplasty (RSA) were compared. Results: After propensity score matching, the RA and OA cohorts each consisted of 8,523 patients. Within 90 days postoperation, RA patients had a significantly higher risk of total complications, deep surgical site infection, wound dehiscence, pneumonia, myocardial infarction, acute renal failure, urinary tract infection, mortality, and readmission compared to the OA cohort. RA patients had a significantly greater risk of periprosthetic joint infection and prosthetic dislocation within 5 years following aTSA and RSA, and a greater risk of scapular fractures following RSA. Among RA patients, RSA had a significantly higher risk of prosthetic dislocation, scapular fractures, and revision compared to aTSA. Conclusions: Following TSA, RA patients should be considered at higher risk of systemic and joint-related complications compared to patients with primary OA. Knowledge of the risk profile of RA patients undergoing TSA is essential for appropriate patient counseling and education.

Development and Evaluation of Information Extraction Module for Postal Address Information (우편주소정보 추출모듈 개발 및 평가)

  • Shin, Hyunkyung;Kim, Hyunseok
    • Journal of Creative Information Culture
    • /
    • v.5 no.2
    • /
    • pp.145-156
    • /
    • 2019
  • In this study, we have developed and evaluated an information extracting module based on the named entity recognition technique. For the given purpose in this paper, the module was designed to apply to the problem dealing with extraction of postal address information from arbitrary documents without any prior knowledge on the document layout. From the perspective of information technique practice, our approach can be said as a probabilistic n-gram (bi- or tri-gram) method which is a generalized technique compared with a uni-gram based keyword matching. It is the main difference between our approach and the conventional methods adopted in natural language processing that applying sentence detection, tokenization, and POS tagging recursively rather than applying the models sequentially. The test results with approximately two thousands documents are presented at this paper.