• Corrosion Science and Technology
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• v.2 no.3
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• pp.109-116
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• 2003

It is well known that SSCC (sulfide stress corrosion cracking) is caused by drastic ingression of hydrogen during the service and accumulation of hydrogen near the potential crack initiation site in the material. It is important to characterize the hydrogen trapping behavior to evaluate the service performance of the high strength pipeline steels. In this study. the relationship between the hydrogen trapping behavior and SSCC susceptibility is evaluated in terms of alloy composition, microstructure and carbide behavior. The hydrogen trapping behavior was measured by electrochemical hydrogen permeation test cell (Devanathan cell). The SSCC susceptibility is evaluated by constant extension rate test and constant strain lest method. The hydrogen trapping behavior is affected greatly by microstructure and nature of carbide particles. The fine TiC, and NbC in the matrix of ferritic structure acts as strong irreversible trap sites whereas the bainitic structure acts as reversible trap site. The SSCC susceptibility is closely related to not only the hydrogen trapping behavior but also the loading condition. As the activity of reversible trap site increases, SSCC susceptibility decreases under static loading condition below yield strength, whereas SSCC susceptibility increases under dynamic loading condition or above yield strength. As the activity of irreversible trap site increases. SSCC susceptibility increases regardless of loading condition. It is cased by the mixed effect of dislocation on hydrogen diffusion and trapping behavior.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.2
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• pp.131-134
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• 2011

We propose a spheroid chip that uses removable cell trapping barriers and that is capable of forming and extracting multicellular spheroids. By using a conventional well plate and flask, it is difficult to form small-sized spheroids, which resemble avascular 3D cell-cell interaction. It was difficult to extract spheroids using conventional microchips and fixed cell trapping barriers. The proposed chip, however, facilitates both formation and extraction of spheroids by using removable cell trapping barriers formed by membrane deflection. The cell trapping barriers, formed at the membrane pressure of 50 kPa, hold the cells in the trapping region at a cell inlet pressure of 145.155 Pa. After incubation for 24 h, the trapped cells form uniform spheroids. We successfully extract the spheroids at a cell inlet pressure of 5 kPa after removing the membrane pressure. The extracted spheroids have a diameter of $197.2{\pm}11.7Bm$ with a viability of $80.3{\pm}7.7%$. Using the proposed chip, uniform spheroids can be formed and these spheroids can be safely extracted for carrying out the post-processing of spheroids.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.391-391
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• 2016

The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.119-123
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• 2016

We discussed various cover glass substrates available for photovoltaic (PV) modules, and investigated the fabrication methods of light trapping structures for the efficiency enhancement of PV modules: wet and dry etching or laser and direct patternings. We also introduced the analysis of haze at etched glass surfaces as a function of wavelength and also presented a anti-reflection coating technology for PV module.

• Corrosion Science and Technology
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• v.5 no.4
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• pp.117-122
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• 2006

Hydrogen permeation measurements have been carried out on API X65 grade linepipe steel. In order to study the effect of steel microstructure on hydrogen diffusion behavior in linepipe steel, the accelerated cooling condition was applied and then three different kinds of microstructures were obtained. Hydrogen permeation measurement has been performed in reference to modified ISO17081 (2004) and ZIS Z3113 method. Hydrogen trapping parameters in these steels were evaluated in terms of the effective diffusivity ($D_{eff}$), permeability ($J_{ss}L$) and the amount of diffusible hydrogen. In this study, microstructures which affect both hydrogen trapping and diffusion were degenerated pearlite (DP), acicular ferrite (AF), bainite and martensite/austenite constituents (MA). The low $D_{eff}$ and $J_{ss}L$ mean that more hydrogen can be trapped reversibly or irreversibly and the corresponding steel microstructure is dominant hydrogen trapping site. The large amount of diffusible hydrogen means that corresponding steel microstructure is predominantly reversible. The results of this study suggest that the hydrogen trapping efficiency increases in the order of DP, bainite and AF, while AF is the most efficient reversible trap.

• Korean Journal of Radiology
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• v.22 no.10
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• pp.1719-1729
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• 2021

Objective: Emphysema and small-airway disease are the two major components of chronic obstructive pulmonary disease (COPD). We propose a novel method of quantitative computed tomography (CT) emphysema air-trapping composite (EAtC) mapping to assess each COPD component. We analyzed the potential use of this method for assessing lung function in patients with COPD. Materials and Methods: A total of 584 patients with COPD underwent inspiration and expiration CTs. Using pairwise analysis of inspiration and expiration CTs with non-rigid registration, EAtC mapping classified lung parenchyma into three areas: Normal, functional air trapping (fAT), and emphysema (Emph). We defined fAT as the area with a density change of less than 60 Hounsfield units (HU) between inspiration and expiration CTs among areas with a density less than -856 HU on inspiration CT. The volume fraction of each area was compared with clinical parameters and pulmonary function tests (PFTs). The results were compared with those of parametric response mapping (PRM) analysis. Results: The relative volumes of the EAtC classes differed according to the Global Initiative for Chronic Obstructive Lung Disease stages (p < 0.001). Each class showed moderate correlations with forced expiratory volume in 1 second (FEV₁) and FEV₁/forced vital capacity (FVC) (r = -0.659-0.674, p < 0.001). Both fAT and Emph were significant predictors of FEV₁ and FEV₁/FVC (R² = 0.352 and 0.488, respectively; p < 0.001). fAT was a significant predictor of mean forced expiratory flow between 25% and 75% and residual volume/total vital capacity (R² = 0.264 and 0.233, respectively; p < 0.001), while Emph and age were significant predictors of carbon monoxide diffusing capacity (R² = 0.303; p < 0.001). fAT showed better correlations with PFTs than with small-airway disease on PRM. Conclusion: The proposed quantitative CT EAtC mapping provides comprehensive lung functional information on each disease component of COPD, which may serve as an imaging biomarker of lung function.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.192-195
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• 2005

The silicon thin film solar cells were fabricated by 13.56 MHz PECVD (Plasma-Enhanced Chemical-Vapor Deposition) and 60 MHz VHF PECVD (Very High-Frequency Plasma-Enhanced Chemical-Vapor Deposition). We focus on textured ZnO:Al films prepared by RF sputtering and post deposition wet chemical etching and studied the surface morphology and optical properties. These films were optimized the light scattering properties of the textured ZnO:Al after wet chemical etching. Finally, the textured ZnO:Al films were successfully applied as substrates for silicon thin films solar cells. The efficiency of tandem solar cells with $0.25 cm^2$ area was $11.8\%$ under $100mW/cm^2$ light intensity. The electrical properties of tandem solar cells were measured with solar simulator (AM 1.5, $100 mW/cm^2)$ and spectral response measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.449-453
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• 2010

In this paper, the electrical characteristics of Fin-type SONOS(silicon-oxide-nitride-oxide-silicon) flash memory device with different trapping layers are analyzed in depth. Two kinds of trapping layers i.e., silicon nitride($Si_3N_4$) and hafnium oxide($HfO_2$) are applied. Compared to the conventional Fin-type SONOS device using the $Si_3N_4$ trapping layer, the Fin-type SOHOS(silicon-oxide-high-k-oxide-silicon) device using the $HfO_2$ trapping layer shows superior program/erase speed. However, the data retention properties in SOHOS device are worse than the SONOS flash memory device. Degraded data retention in the SOHOS device may be attributed to the tunneling leakage current induced by interface trap states, which are supported by the subthreshold slope and low frequency noise characteristics.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.10
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• pp.845-851
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• 2014

Dielectrophoresis (DEP) is defined as the motion of suspended particles in solvent resulting from polarization forces induced by an inhomogeneous electric field. DEP has been utilized for various biological applications such as trapping, sorting, separation of cells, viruses, nanoparticles. However, the analysis of DEP trapping has mostly employed the period-averaged ponderomotive forces while the dynamic features of DEP trapping have not been attracted because the target object is relatively large. Such approach is not appropriate for the nanoscale analysis in which the size of object is considerably small. In this study, we thoroughly investigate the dynamic response of trapping to various system parameters and its influence on the trapping stability. The effects of particle conductivity on its motion are also focused.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.290-292
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• 2015

We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (10⁵ cycles without degradation) and long retention time (5 × 10³ s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.