• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.389.1-389.1
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• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.4
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• pp.286-289
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• 2018

This paper tests the feasibility of using the transparent electrode as the electrode of the capacitor in order to use the vehicle glass of the electric vehicle for a capacitive coupling wireless transfer (CCWPT). Large coupling capacitance can be obtained due to large area and high permittivity using the glasses of an electric vehicle. However, if an electrode is formed on a metal such as copper, then a view cannot be guaranteed and a transparent electrode can pose a solution. Therefore, the coupling capacitor is implemented by forming a glass dielectric with an ITO transparent electrode on one side through a semiconductor deposition process. The loss of the coupling capacitor is investigated, and a 200 W CCWPT prototype is fabricated and tested for its characteristics and power transfer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.387.1-387.1
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• 2016

Transparent materials are necessary for most photoelectric devices, which allow the light generation from electric energy or vice versa. Metal oxides are usual materials for transparent conductors to have high optical transmittance with good electrical properties. Functional designs may apply in various applications, including solar cells, photodetectors, and transparent heaters. Nanoscale structures are effective to drive the incident light into light-absorbing semiconductor layer to improve solar cell performances. Recently, the new metal oxide materials have inaugurated functional device applications. Nickel oxide (NiO) is the strong p-type metal oxide and has been applied for all transparent metal oxide photodetector by combining with n-type ZnO. The abrupt p-NiO/n-ZnO heterojunction device has a high transmittance of 90% for visible light but absorbs almost entire UV wavelength light to show the record fastest photoresponse time of 24 ms. For other applications, NiO has been applied for solar cells and transparent heaters to induce the enhanced performances due to its optical and electrical benefits. We discuss the high possibility of metal oxides for current and future transparent electronic applications.

• Journal of the Semiconductor & Display Technology
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• v.12 no.1
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• pp.29-33
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• 2013

We have fabricated transparent polymer composite films with high thermal emissivity, which can be used for heat dissipation of transparent electronics. PMMA (poly(methyl methacrylate)) solution with high transparency and thermal emissivity is mixed with various fillers (carbon nanotubes (CNTs), aluminum nitride (AlN), or silicon carbide (SiC)) with high thermal conductivity. We have achieved the thermal emissivity as high as 0.94 by the addition of CNTs. Compared with the PMMA film on glass, however, the addition of AlN or SiC is shown to rather decrease the thermal emissivity. It is also observed that the thickness of the PMMA film does not affect its thermal emissivity. To avoid any degradation of the thermal conductivity, therefore, the PMMA film thickness is desirable to be $1{\mu}m$. There also exists a tradeoff between the optical transmittance and thermal conductivity on the selection of the amount of fillers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.159-159
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• 2008

투명전도체 (transparent conducting oxides: TCOs) 는 일반적으로 $10^3\Omega^{-1}Cm^{-1}$의 전도도, 가시광 영역에서 80%이상의 투명성을 가지는 재료로서, 액정 박막 표시 장치(TFT-LCD), 광기전성 소자, 유기 발광 소자, 에너지 절약 창문, 태양전지(sollar cell) 등 전극으로 사용되고 있다. 최근에는 TCO의 전도도특성을 조절하여 반도성특성을 가진 투명 산화물 반도체(transparent oxide semiconductor: TOS) 을 이용한 박막 트랜지스터 연구가 활발히 진행 중이다. 기존의 실리콘을 기반으로 하는 박막 트랜지스터의 낮은 이동도, 불투명성의 특성을 가지고 있지만, 산화물 박막트랜지스터는 높은 이동도를 발현 할 수 있을 뿐만 아니라, 넓은 밴드갭 에너지를 갖는 산화물을 이용하므로 투명한 특성도 발현 할 수 있어 차세대 디스플레이의 구동소자로서 응용연구가 되고 있다. 이에 본 연구에서는 박막트랜지스터 channel layer로서의 Indium-Tin-Zinc oxide 적용특성을 조사하였다. Indium, Tin, Zinc 의 혼합비율을 다양하게 조절하여 타겟을 제작하였다. 이를 RF magnetron sputtering 를 이용하여 박막으로 성장시켰으며, 기판으로는 glass 기판을 사용하였다. 박막 성장시 아르곤과 산소의 비율을 다양하게 조절하였다. 성장시킨 박막은 Hall effect, Transmittance, Work function, XRD등을 이용하여 전기적, 광학적, 구조특성을 평가하였다. Indium-Tin-Zinc Oxide(ITZO) 을 channel layer로 사용하여 Thin-film transistor 을 제작하여, TFT의 I-V 및 stability특성을 평가하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.164-164
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• 2010

The impurity doped ZnO has been extensively studied because of its optoelectric properties. GIZO (Ga-In-Zn-O) amorphous oxide semiconductors has been widely used as transparent flexible semiconductor material. Recently, various amorphous transparent semiconductors such as IZO (In-Zn-O), GIZO, and HIZO (Hf-In-Zn-O) were developed. In this work, we examined the local structures of IZO, GIZO, and HIZO. The local coordination structure was investigated by the extended X-ray absorption fine structure. The IZO, GIZO and HIZO thin films ware deposited on the glass substrate with thickness of 400nm by the radio frequency sputtering method. The targets were prepared by the mixture of $In_2O_3$, ZnO and $HfO_2$ powders. The percent ratio of In:Zn in IZO, Ga:In:Zn in GIZO and Hf:In:Zn in HIZO was 45:55, 33:33:33 and 10:35:55, respectively. In this work, we found that IZO, GIZO and HIZO are all amorphous and have a similar local structure. Also, we obtained the bond distances of $d_{Ga-O}=1.85\;{\AA}$, $d_{Zn-O}=1.98\;{\AA}$, $d_{Hf-O}=2.08\;{\AA}$, $d_{In-O}=2.13\;{\AA}$.

• Journal of the Semiconductor & Display Technology
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• v.13 no.1
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• pp.19-25
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• 2014

This study demonstrates transparent electrodes with characteristics desirable for touch screen panels using carbon nanotubes (CNTs). This has been accomplished by depositing CNTs on glass substrates via spray coating and then depositing thin conductive polymer films on the CNTs via spin coating. For all of the samples, such as CNTs, conductive polymers, and polymer-coated CNTs, the surface morphologies, sheet resistances, visible transmittances, chromatic properties are characterized as functions of their preparation conditions, such as the spray times for CNTs and the spin speeds for conductive polymers. The experimental results confirm that only the polymer-coated CNTs can satisfy all of the requirements that are required for electrodes of touch screen panels, such as the sheet resistance lower than $100{\Omega}/sq$, the visible transmittance higher than 80 %, and the yellowness smaller than 1.

• Journal of the Semiconductor & Display Technology
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• v.13 no.1
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• pp.7-12
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• 2014

In this study, we investigate the effects of corona-discharge pre-treatment on the properties of carbon nanotubes (CNTs) which are used as flexible transparent electrodes. The CNTs are deposited on PET (polyethylene terephthalate) substrates using a spray coating method. Prior to the deposition of CNTs, the PET substrates are corona-treated by varying the feeding directions of the PET substrate and the numbers of treatments. The variations in the surface morphologies and roughnesses of the PET substrates due to corona-treatment are characterized via atomic force microscopy (AFM). Dynamic contact angles (DCAs) of the corona-treated PET substrates are measured and analyzed as functions of the treatment conditions. Also, the sheet resistances and visible-range transmittances of the CNTs deposited on PET substrates are measured before and after bending test. The experimental results obtained in this study provide strong evidences that the adhesive forces between CNTs and PET substrates can be substantially enhanced by corona-discharge pretreatment.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.100-104
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• 2019

The 'ITO/Ag/ITO' multilayers as a highly conductive and transparent electrode, even with the optimum thickness conditions, the transmittances were much lower than those of a single ITO layer on some ranges of the visible wavelength. In order to improve the transmittance, Ag layer was formed with mesh structure. Where, the thickness of the Ag layer was about 10 nm and the space between the Ag lines was varied from 2.9 ㎛ to 19.6 ㎛ with the fixed Ag width of about 1.2 ㎛ in order to vary an open ratio of the Ag mesh structure. The transmittance and sheet resistance in the ITO/Mesh-Ag/ITO multilayer structure were analyzed depending on the open ratio. As a result, a trade off in the open ratio was necessary in order to obtain the transmittance as high as possible and the sheet resistance as possible low. By the open ratio of about 86%, in the ITO/Mesh-Ag/ITO multilayer structure, the transmittance was nearly same as the single ITO layer and the sheet resistance was about 62.3 Ω/.

• Clean Technology
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• v.27 no.3
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• pp.217-222
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• 2021

Although monolayer black phosphorus (BP) and few-layer BP nanosheets (NSs) have been extensively studied as promising alternatives to graphene, research has focused primarily on atomically thin-layered BP in an isolated form. In order to realize the practical applications of BP-related devices, a BP film based on continuous networking of few-layer BP NSs should be developed. In this study, a transparent BP film with high quality was fabricated via a vacuum filtration method. An oxygen-free water solvent was used as an exfoliation medium to avoid significant oxidation of the few-layer BP NSs in liquid-phase exfoliation. The exfoliation efficiency from bulk BP to the few-layer BP NSs was estimated at 22%, which is highly efficient for the production of continuous BP film. The characteristics of the high-quality BP film were determined as 98% transparency, minimum oxidation of 18%, structural stability, and an appropriate bandgap of about 1.8 eV as a semiconductor layer. In order to demonstrate the potential of the BP film for photocatalytic activity, we performed photoelectrochemical water oxidation of the transparent BP film. Although its performance should be improved for practical applications, the BP film could function as a photoanode, which offers a new potential semiconductor in water oxidation. We believe that if the BP film is adequately engineered with other catalysts the photocatalytic activity of the BP film will be improved.