• 제목/요약/키워드: transparent electrode film.

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박막 태양전지용 투명 전극을 위한 Ga 도핑된 ZnO의 RF 전력에 따른 구조 및 전기 특성 변화 (Effect of RF Power on Structural and Electrical Properties of Ga-Doped ZnO for Transparent Electrode of Thin Film Solar Cells)

  • 손창식
    • 한국재료학회지
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    • 제21권4호
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    • pp.202-206
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    • 2011
  • We have investigated the structural and electrical properties of Ga-doped ZnO (GZO) thin films deposited by an RF magnetron sputtering at various RF powers from 50 to 90W. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameters. The structural and electrical properties are strongly related to the RF power. The grain size increases as the RF power increases since the columnar growth of GZO thin film is enhanced at an elevated RF power. This result means that the crystallinity of GZO is improved as the RF power increases. The resistivity of GZO rapidly decreases as the RF power increases up to 70 W and saturates to 90W. In contrast, the electron concentration of GZO increases as the RF power increases up to 70 W and saturates to 90W. GZO thin film shows the lowest resistivity of $2.2{\times}10^{-4}{\Omega}cm$ and the highest electron concentration of $1.7{\times}10^{21}cm^{-3}$ at 90W. The mobility of GZO increases as the RF power increases since the grain boundary scattering decreases due to the reduced density of the grain boundary at a high RF power. The transmittance of GZO thin films in the visible range is above 90%. GZO is a feasible transparent electrode for application as a transparent electrode for thin film solar cells.

일액형 탄소나노튜브/에폭시 바인더 코팅액을 이용한 전도성 필름 제조 및 특성 분석 (Characterization and fabrication of one component solution based CNT/epoxy binder conductive films)

  • 한중탁;우종석;김선영;이건웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.455-456
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    • 2007
  • Optically transparent, highly conductive coating have been major theme of thin film science efforts for some years. In this work, t-MWNT(thin Multi-walled Carbon Nanotubes) are acid treated, then the stable dispersion of t-MWNTs in polar solvent such as alcohols, was achieved by sonication. The transparent conducting films are prepared using the one component solution of t-MWNT/epoxy binder via spray coating on glass substrate. The characterization of acid treated t-MWNTs was performed by Raman spectrometer. The opto-electrical properties of conducting films are analyzed by the binder concentration, and the effect of co-solvent on the compatibility and dispersibility of one component t-MWNT/epoxy binder solutions are discussed.

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Fabrication of a Hydrogenated a-Si Photodiode

  • Hur, Chang-Wu
    • Journal of information and communication convergence engineering
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    • 제1권1호
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    • pp.23-26
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    • 2003
  • A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics

기판온도 변화에 따른 ZnO:Al 투명 전도막의 특성 변화 (A study on the properties of transparent conductive ZnO:Al films on variation substrate temperature)

  • 양진석;성하윤;금민종;손인환;신성권;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.525-528
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    • 2001
  • ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).

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구리 나노 입자에 산-보조 레이저 공정을 적용한 구리 전극 제작 공정 개발 및 투명·유연 전극으로 활용 (Cu Electrode Fabrication by Acid-assisted Laser Processing of Cu Nanoparticles and Application with Transparent·Flexible Electrode)

  • 조현민;권진형;하인호;고승환
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.121-121
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    • 2018
  • Copper is a promising electronic material due to low cost and high electrical conductivity. However, the oxidation problem in an ambient condition makes a crucial issue in practical applications. In here, we developed a simple and cost-effective Cu patterning method on a flexible PET film by combining a solution processable Cu nanoparticle patterning and a low temperature post-processing using acetic acid treatment, laser sintering process and acid-assisted laser sintering process. Acid-assisted laser sintering processed Cu electrode showed superior characteristics in electrical, mechanical and chemical stability over other post-processing methods. Finally, the Cu electrode was applied to the flexible electronics applications such as flexible and transparent heaters and touch screen panels.

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RF magnetron sputtering법으로 형성된 IGZO박막의 RF power에 따른 광학적 및 전기적 특성 (The optical and electrical properties of IGZO thin film fabricated by RF magnetron sputtering according to RF power)

  • 장야쥔;김홍배
    • 반도체디스플레이기술학회지
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    • 제12권1호
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    • pp.41-45
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    • 2013
  • IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

3차원 FDTD 방법에 의한 ITO/Ag/ITO 다층 투명전극막의 투과도 시뮬레이션 (Simulations of Transmittance for the ITO/Ag/ITO Multiple Transparent Electrode Layers by 3 Dimensional FDTD Method)

  • 김기락;조의식;권상직
    • 반도체디스플레이기술학회지
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    • 제19권3호
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    • pp.88-92
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    • 2020
  • As a highly conductive and transparent electrode, the optical transmittances of ITO/Ag/ITO were simulated and compared with the experimental results. The simulations are based on the finite-difference time-domain (FDTD) method in solving linear Maxwell equations. In our simulations, the computation domain is set in the XZ-plane with 3D dimension, and a plane wave with variable wavelengths ranging from 250 nm to 850 nm is incident in the z-direction at normal incidence to the ITO/Ag/ITO film surrounded by free-air space. As the results through both simulations and experiments, it was shown that the thickness combinations by the ITO layers of about 40 nm and the Ag layer of about 10 nm could be most suitable conditions as a high conductive transparent electrode having the transmittance similar to that of a single ITO layer.

반응성 스퍼트링으로 형성된 ITO의 유전채 소성에 따른 특성변화 (The Property Change of ITO Prepared by Reactive R.F. Sputtering in POP manufacturing Process)

  • 남상옥;지성원;손제봉;허근도;조정수;박정후
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1411-1413
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    • 1997
  • The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD (Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn wt 10%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature $150^{\circ}C$ and 8% $O_2$ partial pressure showed about $3.6{\Omega}/{\square}$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

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Comparison study of heatable window film using ITO and ATO

  • Park, Eun Mi;Lee, Dong Hoon;Suh, Moon Suhk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.300.2-300.2
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    • 2016
  • Increasing of the demand for energy savings for buildings, thermal barrier films have more attracted. In particular, as heat loss through the windows have been pointed out to major problems in the construction and automobile industries, the research is consistently conducted for improving the thermal blocking performance for windows. The main theory of the technology is reflect the infrared rays to help the cut off the inflow of the solar energy in summer and outflow of the heat from indoors in winter to save the energy on cooling and heating. Furthermore, this is well known for prevent glare, reduces fading caused by harmful ultraviolet radiation and easy to apply on constructed buildings if it made as a film. In addition to these advantages, apply the transparent electrode to eliminate condensation by heating. Generally ITO is used as a transparent electrode, but is has a low stability in environmental factors. In this study, ITO and its alternative, ATO, is deposited by sputtering system and then the characteristic is evaluated each material based thermal barrier thin film. The optical property was measured on wide range of wavelength (200 nm 2500 nm) to know the transparency in visible wavelength and reflectivity in IR wavelength range. The electrical property was judged by sheet resistivity. Finally the changes of the temperature and current of the deposited film was observed while applying a DC power.

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기판 열처리가 롤투롤 스퍼터를 이용하여 성장시킨 터치 패널용 유연 ITO 투명 전극의 특성에 미치는 효과 연구 (Effect of Substrate Preheating on the Characteristics of Flexible and Transparent ITO Electrodes Grown by Roll-to-Roll Sputtering for Touch Panel Applications)

  • 김동주;이원영;김봉석;김한기
    • 한국전기전자재료학회논문지
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    • 제23권4호
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    • pp.327-332
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    • 2010
  • We report on the effect of PET substrate preheating on the characteristics of the flexible and transparent indium tin oxide (ITO) electrode grown by a specially designed roll-to-roll sputtering system for touch panel applications. It was found that electrical and optical properties of the roll-to-roll sputter grown ITO film were critically dependent on the preheating of the PET substrate. In addition, the roll-to-roll sputter-grown ITO film after post annealing test at $140^{\circ}C$ for 90 min showed stable electrical and optical properties. The low sheet resistance and high optical transmittance of the ITO film grown on the preheated PET substrate demonstrate that the preheating process before ITO sputtering is one of the effective way to improve the characteristics of ITO/PET film. Furthermore, the superior flexibility of the ITO electrode grown on the preheated PET substrate indicates that the preheating treatment is a promising technique to obtain robust ITO/PET sample for touch panel applications.