• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.203-203
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• 2012

The SWCNTs network are formed on various plastic substrates such as poly(ethylene terephthalate) (PET), polyimide (PI) and soda lime glass using roll-to-roll printing and spray process. Selective patterning of carbon nanotubes film on transparent substrates was performed using a femtosecond laser. This process has many advantages because it is performed without chemicals and is easily applied to large-area patterning. It could also control the transparency and conductivity of CNT film by selective removal of CNTs. Furthermore, selective cutting of carbon nanotube using a femtosecond laser does not cause any phase change in the CNTs, as usually shown in focused ion beam irradiation of the CNTs. The patterned SWCNT films on transparent substrate can be used electrode layer for touch panels of flexible or flat panel display instead indium tin oxide (ITO) film.

• Transactions on Electrical and Electronic Materials
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• 제7권5호
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• pp.267-270
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• 2006

The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

• Bulletin of the Korean Chemical Society
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• 제23권3호
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• pp.399-403
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• 2002

The complex of iron(II) tris(3-Br-phen) (3-Br-phen; 3-bromo-1,10-phenanthroline) was prepared as a precursor of electropolymerization and the crystal structure of [Fe(3-Br-phen)3]($PF_6$)2${\cdot}$CH3CN with a distorted octahedral geometry has been investigated. The reductive electropolymerization of $>[Fe(3-Br-phen)3]^{2+}$ complex onto the surface of a glassy carbon electrode and indium tin oxide (ITO) optically transparent electrode were performed in acetonitrile at room temperature. Thin film of poly-$>[Fe(3-Br-phen)3]^{2+}$ formed was adherent, electroactive and stably deposited on a glassy carbon disk electrode. The thin metallopolymeric film formed was also confirmed by absorption spectroscopy.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.234-234
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• 2003

Indium tin oxide(ITO) is an advanced ceramic material with many electronic and optical applications due to its high electrical conductivity and transparency to light ITO thin films are used in transparent electrodes for display devices, transparent coatings for solar energy heat mirrors and windows films in n-p heterojunction solar cells, etc. Almost all display devices were fabricated on transparent ITO electrode substrates. There are several factors that cause decay in the efficiency and the failure of display devices. The degradation or damage of ITO is one of the main factors. Under normal operating conditions, the electric fold required for the operation of display devices is very high As a high electric field induces the joule heat, the degradation of the ITO thin film may be expected. Therefore, it is worthy to investigate the thermal and electrical effect on ITO thin films.

• 한국재료학회지
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• 제15권8호
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• pp.491-495
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• 2005

(Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.

• 접착 및 계면
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• 제24권2호
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• pp.54-59
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• 2023

은 나노와이어 기반 투명전극은 우수한 전도도와 투과도, 유연성을 가지고 있어 ITO 기반의 유연전극을 대체할 수 있는 차세대 유연투명전극으로 각광받고 있다. 그러나 은 나노와이어 기반 투명전극 제작에 사용되는 은 나노와이어 용액에 대한 이해가 부족하여 전자소자 응용 시 소자의 비정상적인 작동이나 전극 필름의 박리 문제가 종종 발생하곤 한다. 본 연구에서는 은 나노와이어 용액에 대한 이해를 높이고자 은 나노와이어 용액에 사용되는 첨가제 중 하나인 hydroxypropyl methylcellulose 접착력 증진제에 대한 연구를 진행하였으며, 접착력 증진제를 첨가함에 따라 은 나노와이어 용액의 특성이 어떻게 변화되고 이러한 용액을 사용하여 제작된 은 나노와이어 필름의 특성이 어떻게 변화되는지 연구하였다. 용액의 특성으로는 극성성분의 표면장력과 분산 성분의 표면장력이 측정되었으며, 필름 특성으로는 표면 에너지와 표면 형상, 은 나노와이어 밀도, 면저항 등이 분석되었다.

• 한국전자파학회논문지
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• 제29권4호
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• pp.277-284
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• 2018

본 논문은 향후 투명 디스플레이, 스마트글래스(smart glass) 등의 그 활용도가 증가 추세에 있는 투명전극과 관련된 논문이며, 본 논문에서는 투명 안테나 등의 투명 고주파 수동소자 설계 시, 투명 디스플레이 등에 가장 많이 사용되고 있는 ITO(Indium-Tin-Oxide)을 이용한 박막형(thin film type) 투명전극의 낮은 전기적 특성(면저항>$5({\Omega}/sq)$)으로 인한 성능저하를 개선하고자, 고주파 소자에 가장 일반적으로 사용되는 도체인 구리선(copper wire)으로 구현되는 정방형 메탈메쉬(square metal mesh)를 이용하여 투명전극을 구현하고, 이를 기본 단위로 하여 투명 패치 안테나를 구현하였고, 그 성능을 비교 분석하였다. 본 논문에서는 투명전극의 기본 설계 블록인 정방형 메탈메쉬의 광학적 특성(광 투과도) 및 전기적 특성(면저항)을 측정 및 분석하였고, 이를 이용하여 투명 패치 안테나를 설계, 측정, 분석하였다. 또한, 정방형 메탈메쉬는 광 투과도를 높이기 위해 얇은 구리선(w=0.2 mm)을 사용하였으며, 망(mesh) 크기(l=1, 2 mm)에 따른 광 투과도와 안테나 성능(방사이득, 방사패턴)과의 관계를 분석하였다. 투명 안테나 성능 측정 결과, 안테나 성능은 정방형 메탈메쉬의 광학적 특성과 반비례하며, 실제 활용 시에는 광학적 특성, 전기적 특성, 제작비용을 종합적으로 고려하여, 응용에 따른 투명 안테나의 활용이 필요하다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.10-10
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• 2009

We have fabricated transparent and flexible thin film transistor(TFT) on polyethylene terephthalate(PET) substrate using Zinc Oxide (ZnO) and Indium Tin Oxide (ITO) film as active layer and electrode. The transfer printing method was used for printing the device layer on target plastic substrate at room temperature. This approach have an advantage to separate the high temperature annealing process to improve the electrical properties of ZnO TFT from the device process on plastic substrate. The resulting devices on plastic substrate presented mechanical and electrical properties similar with those on rigid substrate.

• 전기학회논문지
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• 제66권8호
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• pp.1230-1235
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• 2017

We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

• Journal of Information Display
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• 제10권1호
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• pp.24-27
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• 2009

A simple nonalkoxide sol-gel route for depositing an Al-doped ZnO thin film on a glass substrate was derived in this study. The initial Al dopant concentration in the sol-gel preparation varied and ranged from 0 to 5%. The sol-gel-derived thin films showed c-plane preferred crystallization of their hexagonal phase, with nanosized grain structures. First and second post-heat-treatments were carried out to improve the film’s electrical resistivity. The carrier density and the Hall mobility were measured and discussed to explain the electrical resistivity. The optical transmittance within the visible range showed compatible properties, which indicates the possible use of A1-doped ZnO as a transparent electrode in flat panel displays.