• Title/Summary/Keyword: transparent electrode film

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Transparent ITO/Ag/i-ZnO Multilayer Thin Film enhances Lowing Sheet Resistance

  • Kim, Sungyoung;Kim, Sangbo;Heo, Jaeseok;Cho, Eou-Sik;Kwon, Sang Jik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.187-187
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    • 2015
  • The past thirty years have seen increasingly rapid advances in the field of Indium Tin Oxide (ITO) transparent thin film.[1] However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials.[2] So far, in order to overcome this disadvantage, we show a transparent ITO/Ag/i-ZnO multilayer thin film electrode can be the solution. In comparison with using amount of ITO as a transparent conducting material, intrinsic-Zinc-Oxide (i-ZnO) based on ITO/Ag/i-ZnO multilayer thin film showed cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report ITO/Ag/i-ZnO multilayer thin film properties by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\square}$ at same visible light transmittance.(minimal point $5.2{\Omega}/{\square}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

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Transparent MWCNT Thin Films Fabricated by using the Spray Method (스프레이법으로 제작된 투명 MWCNT 박막)

  • Jang, Kyung-Uk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.4
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    • pp.338-342
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    • 2010
  • Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. The MWCNT films were investigated as a transparent electrode for the solar cell, OLED, and field-emission display. MWCNT films were fabricated by air spray method, whose process is quite low-costed, using the multi-walled CNTs solution on glass substrates. Moreover, the most stable film was fabricated when the spraying time was 60 sec. The film that was sprayed with the MWCNT dispersion for 60 sec, has 300nm thick. And its electric resistivity, transmittance rate, mobility and carrier concentration are $6{\times}10^{-2}{\Omega}{\cdot}cm$, 50% at ${\lambda}=550mm$, $4.3{\times}10^{-2}cm^2/V{\cdot}s$ and $2.1{\times}10^{21}cm^{-3}$, respectively. Also, absorption energy of MWCNT films show from 3.9 eV to 4.6 eV. Furthermore, we can use MWCNT films fabricated by the spray method for the transparent electrode.

The Enhanced Thermoforming Stability of ITO Transparent Electrode Film by Using the Conducting Polymer Thin-Film (전도성 고분자 박막을 이용한 ITO 투명 전극 필름의 열성형 안정성 향상 연구)

  • Seo Yeong Son;Seong Yeon Park;Sangsub Lee;Changhun Yun
    • Membrane Journal
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    • v.33 no.5
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    • pp.248-256
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    • 2023
  • Indium tin oxide (ITO) transparent electrode film has been widely adopted for the various applications such as display and electric vehicle. In this paper, we studied how to enhance the thermoforming stability of ITO film by applying the highly conductive Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin layer. Based on the change of sheet resistance value, the influence of the additional solvent with different boiling point was investigated for the PEDOT:PSS coating solution. In addition, by analyzing optical transmittance and Raman spectrum, we confirmed the key mechanism which determine the final electrical conductivity of the PEDOT:PSS on ITO film using an ethylene glycol solvent. The final ITO transparent electrode coated with PEDOT:PSS performed the outstanding endurance of electrical conduction even in 126% stretching condition.

A Study on Structural and Electrical Properties of ZnO Thick Films on the Glass Substrate and PET Film (Glass Substrate와 PET Film위에 Screen Printing된 ZnO Thick Film의 구조적 전기적 특성)

  • Lee, Ku-Tak;Jeon, Min-Cheol;Chae, Moon-Soon;Lee, Kyung-Ju;Moon, Byung-Moo;Koh, Jung-Hyuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.5
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    • pp.355-358
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    • 2011
  • As a II-IV compound semiconductor, ZnO has a wide band gap of 3.37 eV with transparent properties. Due to this transparent properties, ZnO materials can be also employed as the transparent conducting electrode materials. Recently, rapid progress has been made in the field of DSSC (dye sensitized solar cell)area. Therefore, strong demands have been required for the transparent electrodes with low temperature processing and cheap cost. In this paper, we will prepare ZnO thick films on the PET substrates for the electrode applications. We will investigate the structural and microstructure properties through the XRD, and SEM analysis, respectively. Also, we will study the electrical of specimens to apply the conducting electrode.

Development of Nano Convergence Films Using a Roll-to-Roll Coating System

  • Hwang, Joong Kook;Chang, Sang-Mok;Shin, Hoon-Kyu
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.3
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    • pp.168-171
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    • 2016
  • There has been growing interest and rapid development in transparent electrode films, which are flexible and light and used in mobile, simple information, and electronic devices, and based on recent advancements in nano technology, information technology, and display technology. In particular, studies on developing such films with both high conductivity and high transmittance of visible rays are highly in demand for commercialization. In this study, transparent electrode films were developed for IT using micro patterns that show sheet resistance less than 10 Ω/□, adhesive strength more than 98%, and light transmittance more than 90%. The results of applying a surface emission gradient minimization (Honey Comb) technology to the films was the verification of the sheet resistance, adhesive strength, and light transmittance satisfying the target level of this study through Imprinting and Remolding processes.

Effects of the Ag Layer Embedded in NIZO Layers as Transparent Conducting Electrodes for Liquid Crystal Displays

  • Oh, Byeong-Yun;Heo, Gi-Seok
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.1
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    • pp.33-36
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    • 2016
  • In the present work, a Ni-doped indium zinc oxide (NIZO) film and its multilayers with Ag layers were investigated as transparent conducting electrodes for liquid crystal display (LCD) applications, as a substitute for indium tin oxide (ITO) electrodes. By interposing the Ag layer between the NIZO layers, the loss of the optical transmittance occurred; however, the Ag layer brought enhancement of electrical sheet resistance to the NIZO/Ag/NIZO multilayer electrode. The twisted nematic cell based on the NIZO/Ag/NIZO multilayer electrode exhibited superior electro-optical characteristics than those based on single NIZO electrode and was competitive compared to those based on the conventional ITO electrode. An LCD-based NIZO/Ag/NIZO multilayer electrode may allow new approaches to conventional ITO electrodes in display technology.

Novel electrode architecture for transparent organic thin-film transistors

  • Chen, Fang-Chung;Chen, Tung-Hsien;Lin, Yung-Sheng
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.194-197
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    • 2006
  • One novel electrode-architecture has been adapted to fabricate transparent OTFTs. The device has more than 70% transmittance, yet reminds high performance. Furthermore, we also use transfer line method to prove that the device performance enhancement indeed contributes from the reduction of the contact resistances. It is anticipated that the transparent OTFTs would be very suitable to be the driving circuits for liquid crystal displays (LCDs).

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Some properties on Conversion Efficiency of Flexible Film-Typed DSCs with ZnO:AI / ITO TCO layers (ZnO:Al 과 ITO 투명전도막을 이용한 플랙시블 타입 DSCs변환효율 특성)

  • Kim, Ji-Hoon;Kwak, Dong-Joo;Sung, Youl-Moon;Kim, Tae-Woo
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2009.10a
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    • pp.177-179
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    • 2009
  • In order to investigate the possible application of ZnO films as a transparent conducting oxide (TCO) electrode, ZnO:Al films were prepared by RF magnetron sputtering method. The effects of surface treatment and doping concentration on the structural and electrical properties of ZnO films were mainly studied experimentally. Five-inch PDP cells using either a ZnO:Al or indium tin oxide (ITO) electrode were also fabricated separately under the same manufacturing conditions. The luminous properties of both the transparent conducting oxide electrode were measured and compared with each other. By doping the ZnO target with 2 wt% of Al2O3, the film deposited at a chemical surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. And DBD surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. Although the luminance and luminous efficiency of the transparent conducting oxide electrode using ZnO:AI are lower than those of the cell with the ITO electrode by about 10%, these values are sufficient enough to be considered for the normal operation of TCO.

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Characterisitics of RF/DC Sputter Grown-ITO/Ag/ITO Thin Films for Transparent Conducting Electrode (RF/DC 스퍼티 성장한 ITO/Ag/ITO 투명전극 박막의 특성 연구)

  • Lee, Youngjae;Kim, Jeha
    • Current Photovoltaic Research
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    • v.10 no.1
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    • pp.28-32
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    • 2022
  • We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t0)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t0 = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R = 7.24 Ω/□.

Transparent Oxide Thin Film Transistors with Transparent ZTO Channel and ZTO/Ag/ZTO Source/Drain Electrodes

  • Choi, Yoon-Young;Choi, Kwang-Hyuk;Kim, Han-Ki
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.127-127
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    • 2011
  • We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

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