• 제목/요약/키워드: transition of growth phase

검색결과 169건 처리시간 0.03초

Comparative Genome-Scale Expression Analysis of Growth Phase-dependent Genes in Wild Type and rpoS Mutant of Escherichia coli

  • Oh, Tae-Jeong;Jung, Il-Lae;Woo, Sook-Kyung;Kim, Myung-Soon;Lee, Sun-Woo;Kim, Keun-Ha;Kim, In-Gyu;An, Sung-Whan
    • 한국미생물생명공학회:학술대회논문집
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    • 한국미생물생명공학회 2004년도 Annual Meeting BioExibition International Symposium
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    • pp.258-265
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    • 2004
  • Numerous genes of Escherichia coli have been shown to growth phase-dependent expression throughout growth. The global patterns of growth phase-dependent gene expression of E. coli throughout growth using oligonucleotide microarrays containing a nearly complete set of 4,289 annotated open reading frames. To determine the change of gene expression throughout growth, we compared RNAs taken from timecourses with common reference RNA, which is combined with equal amount of RNA pooled from each time point. The hierarchical clustering of the conditions in accordance with timecourse expression revealed that growth phases were clustered into four classes, consistent with known physiological growth status. We analyzed the differences of expression levels at genome level in both exponential and stationary growth phase cultures. Statistical analysis showed that 213 genes are shown to, growth phase-dependent expression. We also analyzed the expression of 256 known operons and 208 regulatory genes. To assess the global impact of RpoS, we identified 193 genes coregulated with rpoS and their expression levels were examined in the isogenic rpoS mutant. The results revealed that 99 of 193 were novel RpoS-dependent stationary phase-induced genes and the majority of those are functionally unknown. Our data provide that global changes and adjustments of gene expression are coordinately regulated by growth transition in E. coli.

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반도체 CdTe 박막의 전기 광학적 특성 (The electrical and optical properties of semiconductor CdTe films)

  • 박국상;김선옥;이기암
    • 한국결정성장학회지
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    • 제5권1호
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    • pp.78-86
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    • 1995
  • 유리기판 위에 electron beam으로 증착(EBE)된 CdTe film의 결정구조 및 전기 전도도와 광 전도도를 조사하였다. 그 구조는 거의 hexagonal phase 이었으며 Cubic phas가 약간 포함된 다결정이었다. 암 전기 전도도(dark electric conductivity)는 $1-^{-8} {\Omega}^{-1} cm^{-1}$정도이고 $300^{\circ}C$에서 1시간 동안 열처리하여 약간 증가되었다. 온도가 증가됨에 따른 전기 전도도로부터 계산된 활성화 에너지는 실온에서 증착된 film의 경우1.446 eV이었다. 흡수계수로부터 구한 광학적 band gap은 직접 천이(direct transition)인 경우 1.52 eV이었고 간접 천이(indirect transition)인 경우 1.44eV이었다. Film의 광전도도는 약$1-^{-8} {\Omega}^{-1} cm^{-1}$정도이고, 실온에서 대략 600 nm일때 가장 크다. 광전기 전도도는 850 nm에서 증가하기 시작하며 이는 CdTe 다결정의 활성화 에너지 (activation energy)인 1.446 eV와 근사하다.

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전도성 기판에 도입된 산화아연 나노월의 능동적 성장법과 전자소자

  • 김동찬;이주호;배영숙;최원철;조형균;이정용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.54-54
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    • 2010
  • This article reports a spontaneous method for controlling the growth mode from vertically arrayed ultra-slim MgZnO nanowires to nanowalls through the Zn random motion of seeds formed by surface phase separation by Mg injection near an evaporation temperature of Zn. The random motion of single crystal MgZnO seeds with relative Zn rich phase played a vital role in the growth of the MgZnO nanowalls. The seeds were networked with increasing Zn flux compared with Mg flux and closing to the evaporation temperature of Zn on phase separation layers. We achieved fabrication of MgZnO nanowalls on various non- and conducting substrates by this advanced growth method. The MgZnO nanowalls hydrogen sensor showed an improved sensing performance compared to the MgZnO nanowires grown under the similar conditions. Based on the microstructural characterizations, the growth procedure and models for the evolution of the structure transition from MgZnO nanowires to nanowalls on the Si substrates are proposed for phased growth times.

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AFM을 이용한 폴리술폰막의 표면구조와 상분리현상에 관한 연구 (Surface structure and phase separation mechanism of polysulfone membranes by AFM)

  • 김제영;이환광;김성철
    • 한국막학회:학술대회논문집
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    • 한국막학회 1998년도 추계 총회 및 학술발표회
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    • pp.103-105
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    • 1998
  • Asymmetric polymeric membranes prepared by the phase transition technique usually have either a top layer consisting of closely packed nodules or pores dispersed throughout the membrane surfaces. In this study, we present AFM image of a polysulfone membrane which show a clear evidence for the nodular structure and porous structure resulted from different phase separation mechanisms; spinodal decomposition and nucleation and growth. The surface morphology obtained by SEM and AFM was also compared.

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주기적 후류 내의 익형 위 천이경계층에 관한 실험적 연구(II) -위상평균된 유동특성- (Experimental Study of Boundary Layer Transition on an Airfoil Induced by Periodically Passing Wake (II) -A Phase-Averaged Characteristic-)

  • 박태춘;전우평;강신형
    • 대한기계학회논문집B
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    • 제25권6호
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    • pp.786-798
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    • 2001
  • This paper describes the phenomena of wake-induced transition of the boundary layers on a NACA0012 airfoil using measured phase-averaged data. Especially, the phase-averaged wall shear stresses are reasonably evaluated using the principle of Computational Preston Tube Method. Due to the passing wake, the turbulent patch is generated in the laminar boundary layer on the airfoil and the boundary layer becomes temporarily transitional. The patches propagate downstream with less speed than free-stream velocity and merge with each other at further down stream station, and the boundary layer becomes more transitional. The generation of turbulent patch at the leading edge of the airfoil mainly depends on velocity defects and turbulent intensity profiles of passing wakes. However, the growth and merging of turbulent patches depend on local streamwise pressure gradients as well as characteristics of turbulent patches. In this transition process, the present experimental data show very similar features to the previous numerical and experimental studies. It is confirmed that the two phase-averaged mean velocity dips appear in the outer region of transitional boundary layer for each passing cycle. Relatively high values of the phase-averaged turbulent fluctuations in the outer region indicate the possibility that breakdown occurs in the outer layer not near the wall.

이온 실화처리한 Ni-Cr-Mo강의 저온파괴인성에 관한 연구 (A Study on the Low Temperature Fracture Toughness of Ion-nitrided Ni-Cr-Mo Steel)

  • 오세욱;윤한기;문인철
    • 한국해양공학회지
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    • 제1권2호
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    • pp.101-112
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    • 1987
  • Fracture toughness characterization in the transition region is examined for heat-treated and ionnitrided Ni-Cr-Mo steel. After heat treatment for the specimens of Ni-Cr-Mo steel, organizations of specimens-specimens which are heat-treated and ion-nitrided for 4 hours at 500 .deg. C and 5 torr in 25%N/dub 2/-75%H/sub 2/mixed gas-, hardness variety, and X-ray diffraction pattern of the ion-nitriding compound layer are observed. Fracture toughenss test of unloading compliance method were conducted over the regions from room trmperature to -70.deg. C. The compound layer was consisted of r'=Fe/sub 4/N phase and ion-nitrided layer's depth was 200mm from surface. The transition regions of heat-treated and ion-nitrided specimens were about -30.deg. C and -50.deg. C, respectively. The transition region of ion-nitrided specimens is estimated less than that of heat-treated one, and this is the effect of ion-nitriding.

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교통부문 탄소배출 탈동조화 현상의 원인분석 및 에너지전환의 효과: OECD 25개국 패널분석 (Drivers of Carbon Decoupling in Transportation Sector and the Effect of Energy Transition: Panel Analysis of 25 OECD Countries)

  • 임형우;조하현
    • 자원ㆍ환경경제연구
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    • 제29권3호
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    • pp.389-418
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    • 2020
  • 최근 OECD 일부 국가를 중심으로 교통부문 온실가스 배출량의 탈동조화 현상이 강화되고 있다. 본 연구는 1990~2017년 OECD 25개 국가 데이터를 이용하여 교통부문 온실가스 배출의 탈동조화 현황을 살펴보고, 에너지전환이 탈동조화에 미치는 영향을 분석하였다. 분석결과, 상당수의 국가들이 탈동조화 국면에 도달했으며, 일부 국가는 경제성장에도 불구하고 온실가스 배출량은 감소하는 강한 탈동조화 국면에 도달했다. 에너지 전환이 탈동조화 국면에 미치는 영향을 분석해본 결과, 전기화 현상은 탈동조화 달성에 긍정적인 영향을 미친 반면, 가스화 현상은 유의성이 없었다. 이 외에도 적은 운송량, 높은 도시화율, 강한 환경정책, 높은 무역개방도가 탈동조화 달성에 유의미한 영향을 미쳤다.

ZnO 바리스터 세라믹스의 미세구조와 상전이 (Microstructure and Phase Transition of ZnO Varistor Ceramics)

  • 김경남;한상목
    • 한국세라믹학회지
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    • 제28권2호
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    • pp.160-166
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    • 1991
  • Microstructure and phase changes during the sintering of ZnO varistors were studied in ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems using acanning electron microscopy (SEM) with an energy dispersive X-ray analysis (EDAX), X-ray diffraction (XRD) and differential thermal analysis (DTA). The spinel phase and the Bi2O3 phase were formed by the decomposition of the pyrochlore phase during heating. The spinel particles (2-4$\mu\textrm{m}$), which were formed both along ther grain boundaries and within the ZnO grain, were always found near the pyrochlore phase. Intergranular phases (Bi2O3 and pyrochlore) were precipitated from the liquid phase during cooling. The Bi2O3 phases were located at the triple (or multiple) point of the ZnO grains. Cr2O3 played a role in decreasing the formation temperature of the spinel phase and Bi2O3 phase during sintering, and inhibited the grain growth.

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R.F Magnetron Sputtering법으로 제조한 TiO2 박막의 특성 (Characteristics of TiO2 Thin Films Fabricated by R.E, Magnetron Sputtering)

  • 추용호;최대규
    • 한국재료학회지
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    • 제14권11호
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    • pp.821-827
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    • 2004
  • Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

Korean Innovation Model, Revisited

  • Choi, Youngrak
    • STI Policy Review
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    • 제1권1호
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    • pp.93-109
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    • 2010
  • Over the last decade, some Korean enterprises have emerged to become global players in their specialized products. How have they achieved such tremendous technological progress in a short period of time? This paper explores that question by examining the characteristics of technological innovation activities at major Korean enterprises. The paper begins with a brief review of the stages of economic growth and science and technology development in Korea. Then, the existing literature, explaining the Korean innovation model, is analyzed in order to establish a new framework for the Korean innovation model. Specifically, Korean firms have experienced three sequential phases, and thus, the Korean model, at the firm level, can be coined as "path-following," "path-revealing," and "path-creating." Then, the stylized facts in the first phase (path-following) and the second phase (path-revealing) are discussed, in the context of empirical evidence from the areas of memory chips, automobiles, shipbuilding, and steel. In terms of technology development, the Korean model has evolved as "collective learning" in the first phase, "collective recombination" of existing knowledge and technology in the second phase, and is assumed as "collective creativity" in the third phase. Ultimately, all three can be classified as "collective creation". Korean firms now face a transition in the modes of technological innovation in order to efficiently implement the third phase. To achieve remarkable progress again, as they did in the past, and to sustain the growth momentum, Korean firms should challenge new dimensions such as creative technological ideas, distinctive technological capabilities, and unique innovation systems -- all of which connote 'uniqueness'. Finally, some lessons from the Korean technological innovation experience are addressed.