• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.222.2-222.2
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• 2016

트랜지스터 응용 등에 관한 연구가 활발해 지면서 에너지 밴드갭이 0 eV에 가까운 그래핀 이외의 밴드 갭 조절이 가능한 MoS2 (molybdenum disulfide), BN (boron nitride), Bi2Te3 (bismuth telluride), WS2 (tungsten disulfide) 등과 같은 이차원 Transition Metal DiChalcogenides (TMDC) 물질이 반도체 물질로 각광받고 있다. 특히 MoS2의 경우 단결정 덩어리 상태에서는 약 1.3 eV의 밴드갭을 가지나 두께가 줄어들어 두 층일 경우에는 약 1.65 eV, 단일층이 되면 약 1.9 eV의 밴드갭을 가져 박막 층수에 따라 에너지 밴드갭 조절이 가능한 것으로 알려져있다. 하지만 두께 조절이 가능하면서 대면적, 고품질을 가지는 MoS2 박막 합성은 아직 제한적이라 할 수 있으며 새로운 방법 및 물질에 대한 연구가 지속적으로 이루어 지고 있다. 따라서 본 연구에서는 다양한 층수를 지니는 MoS2 합성을 위해 나노 두께의 MoS2 박막을 CF4 plasma 를 이용하여 layer etching 진행하고 CF4 plasma 100초 etching 진행한 2 layer 두께의 MoS2를 기준으로 H2S plasma를 이용하여 treatment 진행하였다. 물리적, 화학적 분석은 Raman spectroscopy, XPS(X-ray Photoelectron Spectroscopy), AFM (Atomic Force Microscopy) 등을 이용해 진행하였고 이를 통해 MoS2 layer 감소 및 damage recovery 등을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.75-75
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• 2011

전이금속(transition metal) 질화물(nitride)은 높은 경도, 내마모성, 부식 저항성 그리고 내열성 등과 같은 우수한 기계적 물성 때문에 많은 연구가 되어 왔다. 이 중 질화 티타늄은 높은 경도, 내식 및 내마모의 우수한 기계적 특성으로 공구(tool)와 같은 제품의 수명 향상을 위한 표면 코팅으로 사용되어 왔으며, 금(gold)색의 미려한 색상을 이용한 제품의 외관 표면처리, 정형외과 및 치과용 보형물의 수명 및 안정성 향상 등 다양한 분야에 응용 되고 있다. 본 연구에서는 Cathodic Arc 코팅 방식을 이용하여 질화 티타늄을 합성하였으며, 경사 코팅에 따른 단층 및 다층 피막(3-layer)의 미세조직 변화와 그 물성을 평가하였다. 아크 소스에 장착된 타겟은 99.5%의 Ti 타겟을 사용하였고, 시편과 타겟 간의 거리는 약 31 cm이며, 시편은 알코올과 아세톤으로 초음파 세척 된 냉연강판과 SUS 304를 사용하였다. 시편을 진공용기에 장착하고 ~10-6 Torr까지 진공배기를 실시하고, Ar 가스를 진공용기 내로 공급하여 ~10-4 Torr에서 시편에 bias (Pulse : 400V)를 인가한 후 아크를 발생시켜 약 5분간 청정을 실시하였다. 플라즈마 청정이 끝나면 시편에 인가된 bias를 차단하고 코팅하였다. 경사 코팅을 위한 시편의 회전각은 $30^{\circ}$, $45^{\circ}$, $60^{\circ}$이며, 질화 티타늄의 두께는 약 $3{\mu}m$로 동일하게 코팅 하였다. 경사 코팅된 박막의 경우는 동일 시간 코팅하였을 경우 경사각이 커질수록 두께가 감소하였다. 경사각에 따라 코팅 층이 성장하였고, Bias를 인가 할 경우에는 경사 입사의 효과가 상쇄됨이 관찰되었다. 또한 경사 코팅에 의해 제조된 티타늄 질화물의 경도는 저하 되었으며, $30^{\circ}$와 $60^{\circ}$에 비해 $45^{\circ}$ 경우 경도 저하가 가장 적었다. 결론적으로 Cathodic 아크 코팅 방법으로 질화티타늄을 합성하였고, 경사 코팅을 통해 박막의 미세조직 변화를 확인 하였다. 본 연구에서 얻어진 결과를 이용하여 다양한 구조로 박막의 성장을 유도 할 수 있으며, 이를 통해 경도, 내마모성, 내식성 등의 물성을 변화시킬 수 있는 장점을 가질 것으로 예상된다.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.111-118
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• 2023

MXene, a two-dimensional transition metal carbide or nitride, has recently attracted much attention as a lightweight and flexible electromagnetic shielding material due to its high electrical conductivity, good mechanical strength and thermal stability. In particular, the Ti-based MXene, Ti₃C₂T_x and Ti₂CT_x are reported to have the best electrical conductivity and electromagnetic shielding properties in the vast MXene family. Therefore, in this study, Ti₃C₂T_x and Ti₂CT_x films were prepared by vacuum filtration using Ti₃C₂T_x and Ti₂CT_x dispersions synthesized by interlayer metal etching and centrifugation of Ti₃AlC₂ and Ti₂AlC. The electrical conductivity and electromagnetic shielding efficiency of the films were measured after heat treatment at high temperature. Then, X-ray diffraction and photoelectron spectroscopy were performed to analyze the structural changes of Ti₃C₂T_x and Ti₂CT_x films after heat treatment and their effects on electromagnetic shielding. Based on the results of this study, we propose an optimal structure for an ultra-thin, lightweight, and high performance MXene-based electromagnetic shielding film for future applications in small and wearable electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.