• 제목/요약/키워드: transition metal dichalcogenides

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Synthesis and Properties of Two Dimensional Doped Transition Metal Dichalcogenides

  • Yoon, Aram;Lee, Zonghoon
    • Applied Microscopy
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    • 제47권1호
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    • pp.19-28
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    • 2017
  • Since graphene was discovered in 2004, two-dimensional (2D) materials have been actively studied. Especially, 2D transition metal dichalcogenides (TMDs), such as $MoS_2$ and $WS_2$, have been the subject of significant research because of their exceptional optical, electrical, magnetic, catalytic, and morphological properties. Therefore, these materials are expected to be used in a variety of applications. Furthermore, tuning the properties of TMDs is essential to improve their performance and expand their applications. This review classifies the various doping methods of 2D TMDs, and it summarizes how the dopants interact with the materials and how the performance of the materials improves depending on the synthesis methods and the species of the dopants.

Recent Progresses in the Growth of Two-dimensional Transition Metal Dichalcogenides

  • Jung, Yeonjoon;Ji, Eunji;Capasso, Andrea;Lee, Gwan-Hyoung
    • 한국세라믹학회지
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    • 제56권1호
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    • pp.24-36
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    • 2019
  • Recently, considerable progress and many breakthroughs have been achieved in the growth of two-dimensional materials, especially transition metal dichalcogenides (TMDCs), which attract significant attention owing to their unique properties originating from their atomically thin layered structure. Chemical vapor deposition (CVD) has shown great promise to fabricate large-scale and high-quality TMDC films with exceptional electronic and optical properties. However, the scalable growth of high-quality TMDCs by CVD is yet to meet industrial criteria. Therefore, growth mechanisms should be unveiled for a deeper understanding and further improvement of growth methods are required. This review summarizes the recent progress in the growth methods of TMDCs through CVD and other modified approaches to gain insights into the growth of large-scale and high-quality TMDCs.

Theoretical Study of Auger Recombination of Excitons in Monolayer Transition-metal Dichalcogenides

  • Lee, Hyun Cheol
    • Journal of the Korean Physical Society
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    • 제73권11호
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    • pp.1735-1743
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    • 2018
  • Excitons are the most prominent features of the optical properties of monolayer transition-metal dichalcogenides(TMDC). In view of optoelectronics it is very important to understand the decay mechanisms of the excitons of these materials. Auger recombination of excitons are regarded as one of the dominant decay processes. In this paper the Auger constant of recombination is computed based on the approach proposed by Kavoulakis and Baym. We obtain both temperature dependent (from type A, A' processes) and temperature independent (from type B, B' processes) contributions, and a numerical estimate of theoretical result yields the value of constant in the order of $10^{-2}cm^2s^{-1}$, being consistent with existing experimental data. This implies that Auger decay processes severely limit the photoluminescence yield of TMDC-based optoelectronic devices.

2차원 층상구조 전이금속칼코젠의 반도체-도체 구조상전이 기반 응용 기술 (Applications of metal-semiconductor phase transition in 2D layered transition metal dichalcogenides)

  • 조수연;김세라;석진봉;양희준
    • 진공이야기
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    • 제3권1호
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    • pp.4-8
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    • 2016
  • Motivated by two dimensional graphene, layered transition metal dichalcogenides (TMDs) have attracted scientific interests by their diverse electronic, optical and catalytic properties. In particular, group 6 TMDs such as $MoS_2$ and $MoTe_2$ have polymorphs (with metallic octahedral and semiconducting hexagonal phases) which are not present in graphene. Here, we introduce a new concept in 2D materials' studies, structural phase transition, with group 6 TMDs and its current research trend and applications for electric device and electrochemical catalyst.

Atomic Resolution Scanning Transmission Electron Microscopy of Two-Dimensional Layered Transition Metal Dichalcogenides

  • Lu, Ning;Wang, Jinguo;Oviedo, uan Pablo;Lian, Guoda;Kim, Moon Jea
    • Applied Microscopy
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    • 제45권4호
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    • pp.225-229
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    • 2015
  • Transition metal dichalcogenides (TMDs) are a class of two-dimensional (2D) materials that have attracted growing interest because of their promising applications. The properties of TMDs strongly depend on the crystalline structure and the number and stacking sequence of layers in their crystals and thin films. Though electrical, mechanical, and magnetic studies of 2D materials are being conducted, there is an evident lack of direct atom-by-atom visualization, limiting insight on these highly exciting material systems. Herein, we present our recent studies on the characterization of 2D layered materials by means of aberration corrected scanning transmission electron microscopy (STEM), in particular via high angle annular dark field (HAADF) imaging. We have identified the atomic arrangements and defects in 2H stacked TMDs, 1T stacked TMDs, distorted 1T stacked TMDs, and vertically integrated heterojunctions of 2D TMDs crystals.

Vapor Deposition Techniques for Synthesis of Two-Dimensional Transition Metal Dichalcogenides

  • Song, Jeong-Gyu;Park, Kyunam;Park, Jusang;Kim, Hyungjun
    • Applied Microscopy
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    • 제45권3호
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    • pp.119-125
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    • 2015
  • Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted significant attention due to their unique and exotic properties attributed to their low dimensionality. In particular, semiconducting 2D TMDCs such as $MoS_2$, $WS_2$, $MoSe_2$, and $WSe_2$ have been demonstrated to be feasible for various advanced electronic and optical applications. In these regards, process to synthesize high quality 2D TMDCs layers with high reliability, wafer-scale uniformity, controllable layer number and excellent electronic properties is essential in order to use 2D TMDCs in practical applications. Vapor deposition techniques, such as physical vapor deposition, chemical vapor deposition and atomic layer deposition, could be promising processes to produce high quality 2D TMDCs due to high purity, thickness controllability and thickness uniformity. In this article, we briefly review recent research trend on vapor deposition techniques to synthesize 2D TMDCs.

이차원 반도체 소재를 이용한 투명 태양전지 특성에 관한 연구 (Transparent Photovoltaic Device using Two-dimensional Transition-metal Dichalcogenides)

  • 좌태헌;현철민;김민식;이혁주;안지훈
    • 한국표면공학회지
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    • 제49권2호
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    • pp.186-190
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    • 2016
  • In this study, we fabricated the transparent photovoltaic device using 2-dimensional transition-metal dichalcogenides and investigated the transparency and photovoltaic characteristics. P-n heterojunction was formed by mechanical exfoliation and aligned transfer method on the transparent sheet using n-type $MoS_2$ and p-type $WSe_2$. Our transparent photovoltaic device exhibited the open-circuit voltage of ~ 0.15 V and the short-circuit current of 0.48 nA under illumination of white light.

Phase Transformation of Two-Dimensional Transition Metal Dichalcogenides

  • Kim, Jaemin;Lee, Zonghoon
    • Applied Microscopy
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    • 제48권2호
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    • pp.43-48
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    • 2018
  • Transition metal dichalcogenide (TMD) materials have distinctive structures in comparison with other two-dimensional materials. TMD materials' structure is held together by van der Waals and covalent intralayer interactions; consequently, TMDs exhibit multiple phases and properties depending on their structure. This article reviews some of the research currently being undertaken to control TMD phases to utilize their different properties. This review introduces some trials for changing the phase of TMDs.

Characterization and surface engineering of two-dimensional atomic crystals

  • 유영준
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.63.1-63.1
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    • 2015
  • The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, van der Waals (vdW) heterostructures using two dimensional (2D) atomic crystals such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have been attracted intensely. In particular, for high performance of vdW heterostructures device, ultraclean interface between stacked 2D atomic crystals should be guaranteed. In this talk, I will present fabrication and characterization of the vdW field effect transistors toward performance enhancement by employing TMDCs channel, h-BN insulating layer and graphene electrode. Furthermore, it will also be introduced the characterization and surface engineering of graphene for gas molecule sensor.

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Raman Spectroscopic Studies on Two-Dimensional Materials

  • Lee, Jae-Ung;Kim, Minjung;Cheong, Hyeonsik
    • Applied Microscopy
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    • 제45권3호
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    • pp.126-130
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    • 2015
  • Raman spectroscopy is one of the most widely used tools in the field of graphene and two-dimensional (2D) materials. It is used not only to characterize structural properties such as the number of layers, defect densities, strain, etc., but also to probe the electronic band structure and other electrical properties. As the field of 2D materials expanded beyond graphene to include new classes of layered materials including transition metal dichalcogenides such as $MoS_2$, new physical phenomena such as anomalous resonance behaviors are observed. In this review, recent results from Raman spectroscopic studies on 2D materials are summarized.