• 대한전자공학회논문지TC
• /
• 제47권11호
• /
• pp.69-76
• /
• 2010

본 논문에서는 X-Band 모노펄스 레이더 RF 프론트 엔드에서 국부발진 신호를 동일 진폭, 동일 위상으로 분배하는 도파관 천이 구조를 갖는 4-Way 윌킨슨 분배기 설계에 대해 연구하였다. X-Band에서 동작하는 모노펄스 레이더 프론트 엔드는 합, 방위각 및 고각 신호를 하강변환 하는 3개의 도파관 수신믹서와 체계 연동시 X-Band 시험신호를 발생하는 SSB 도파관 믹서로 구성된다. 프론트 엔드를 구성하는 각 믹서에 국부발진(LO : Local oscillator) 신호를 입력하기 위해서는 저 손실 특성을 가지면서 동일 전력 레벨과 동 위상으로 LO 전력을 분배하는 4-Way 분배기가 요구된다. 본 논문에서는 저 손실, 동위상으로 LO 신호를 분배하기 위해 도파관 천이 구조를 갖는 4-Way 윌킨슨 분배기를 설계/제작 하였다. 제작된 윌킨슨 전력 분배기는 X-Band에서 삽입손실이 평균 6.8dB, VSWR은 1.06~1.28였으며, 이때 각 단자 출력 위상차는 최대 4.5도 이내를 유지하였다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 추계학술발표대회
• /
• pp.19.2-19.2
• /
• 2011

The $(Sr_{0.75},\;La_{0.25})TiO_3$ (SLTO) ultra-thin films with various thicknesses have been grown on Ti-O terminated $SrTiO_3$(100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). By monitoring the in-situ specular spot intensity oscillation of reflection high energy electron diffraction (RHEED), we controlled the layer-by-layer film growth. The film structure and topography were verified by atomic force microscopy (AFM) and high resolution thin film x-ray diffraction by the synchrotron x-ray radiation. We have also investigated the electronic band structure using x-ray absorption spectroscopy (XAS). The ultra thin SLTO film exhibits thickness driven metal-insulator transition around 8 unit cell thickness when the film thickness progressively reduced to 2 unit cell. The SLTO thin films with an insulating character showed band splitting in Ti $L_3-L_2$ edge XAS spectrum which is attributed to Ti 3d band splitting. This narrow d band splitting could drive the metal-insulator transition along with Anderson Localization. In optical conductivity, we have found the spectral weight transfer from coherent part to incoherent part when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in ultra thin films.

• 한국재료학회지
• /
• 제12권6호
• /
• pp.431-435
• /
• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• 한국인터넷방송통신학회논문지
• /
• 제18권2호
• /
• pp.27-32
• /
• 2018

본 논문에서는 W-대역 초소형 레이다용 송수신모듈을 설계 및 제작하였다. 제안하는 광대역 마이크로스트립-도파관 전이구조를 이용하여 설계 및 제작 오차를 줄였으며, 전이구조 당 1 dB 이하의 삽입손실 및 제작의 신뢰성을 제공하였다. 이중편파 모노펄스 특성을 가지는 초소형 레이다에 직접 적용하기 위해 28 dBm의 높은 출력을 가지는 한 채널의 송신모듈을 설계 및 제작하였다. 또한 13.5 dB의 낮은 잡음지수 및 최대 17 dBm의 높은 입력 P1dB를 가지는 6채널의 수신모듈을 개발하였다. 본 논문에서 제시한 W-대역 송수신모듈을 이용하여 초소형 레이다에 적용하여 이중 편파 모노펄스 신호를 바로 처리 가능하리라 예상된다.

• 한국통신학회논문지
• /
• 제15권9호
• /
• pp.722-728
• /
• 1990

U-대역 MMIC 전력증폭기 특성 측정에 사용될 도파관-마이크로스트립간의 트랩지션을 설계 제작하였다. 광대역 정합특성을 얻기 위해 릿지 도파관을 사용한 ${\lambda}$/4 Tchebyscheff 임피던스 변환기를 트랜지션 임피던스 변환부에 적용하였다. 설계된 Transition은 Supper-Compact을 사용하여 40GHZ-48GHZ 대역에서 Su이 -28dB 이하가 되도록 최적설계하였다. 40GHZ-47GHZ 범위에서 측정된 Transition Insertion Loss는 약 0.3dB Return Loss는 25dB 로 나타났다.

• 한국산업정보학회논문지
• /
• 제19권1호
• /
• pp.19-24
• /
• 2014

In this work, a compact patch antenna based on a low temperature cofired ceramic (LTCC) has been presented for V-band system-on-package (SoP) applications. In order to integrate it with transceiver block, a waveguide (W/G) to embedded microstrip line (eMSL) vertical transition was designed using slot-fed double stacked patch antennas for easy assembly and wide bandwidth. The $2{\times}2$ patch antenna integrating the transition was designed and fabricated in the 5-layer LTCC dielectrics. The whole size of the fabricated antenna including the $2{\times}2$ patches, transition and W/G was $20{\times}24{\times}5.39mm^3$. The fabricated antenna has achieved a 10 dB impedance bandwidth of 2.45 GHz from 61 to 63.45 GHz.

• Bulletin of the Korean Chemical Society
• /
• 제33권1호
• /
• pp.153-158
• /
• 2012

The hydrogenation of $AlB_2$-type BaGaGe exhibits a metal to insulator (MI) transition, inducing a puckering distortion of the original hexagonal [GaGe] layers. We investigate the electronic structure changes associated with the hydrogen-induced MI transition, using extended H$\ddot{u}$ckel tight-binding band calculations. The results indicate that hydrogen incorporation in the precursor BaGaGe is characterized by an antibonding interaction of $\pi$ on GaGe with hydrogen 1s and the second-order mixing of the singly occupied antibonding $\pi^*$ orbital into it, through Ga-H bond formation. As a result, the fully occupied bonding $\pi$ band in BaGaGe changes to a weakly dispersive band with Ge pz (lone pair) character in the hydride, which becomes located just below the Fermi level. The Ga-Ge bonds within a layered polyanion are slightly weakened by hydrogen incorporation. A rationale for this is given.

• 대한화학회지
• /
• 제7권3호
• /
• pp.197-202
• /
• 1963

The ${\alpha}-and\;{\beta}$-isomer of 4-nitroazoxybenzenes have been separated by liquid chromatography and their U.V. spectra were examined. The n${\to}{\pi}^{\ast}$ transition band of the compounds did not appear, likewise the cases of other compounds of the series. Transition band of the new isomer were as usual as those of other azoxy-compounds, whereas the ${\pi}{\to}{\pi}^{\ast}$ transition band of the other isomer which is reported in the literature shown peculier hypochromic shift and hypochromic effect. From the spectroscopic point of view it is very likely that the new isomer (m.p. $184-5^{\circ}C$) is ${\alpha}$-isomer and the other one (m.p. $152^{circ}C$) is ${\beta}$-isomer contrary to the literature.

• 한국산업정보학회논문지
• /
• 제20권1호
• /
• pp.43-47
• /
• 2015

본 논문에서는 밀리미터파 모듈 응용을 위하여 광대역 마이크로스트립-대-웨이브가이드 (WR12) 천이기가 제시된다. 대역폭의 개선을 위하여 radial 마이크로 스트립 electrical-probe가 저 손실 유기 유전체 기판 위에 설계되었다. 제안된 천이기의 삽입 및 반사손실에 대한 설계 및 측정된 특성을 나타내었다. 측정을 위한 케이블 아답터와 웨이브가이드 천이기의 손실을 고려하면, 제안된 천이기의 천이 손실이 70 및 80 GHz에서 각각 -1.88 및 -2.01 dB로 분석되었다. 제안된 천이기의 -10 dB 반사 손실 대역폭은 67GHz 에서 95 GHz로 약 26 GHz이다. 최신의 연구결과와 비교해서 대역폭에서 8.3 % 개선되었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.347-351
• /
• 2003

A p-$CdIn_2Te_4$ single crystal has been grown by the Bridgman method without a seed crystal in a tree-stage vertical electric furnace. From photocurrent measurements, it was found that three peaks, A, B, and C, corresponded to an intrinsic transition due to the band-to-band transition from the valence band states ${\Gamma}_7(A),\;{\Gamma}_6(B),\;and\;{\Gamma}_7(C)$ to the conduction band state ${\Gamma}_6$, respectively. Also, the valence band splitting of the $CdIn_2Te_4$ crystal has been confirmed by photocurrent spectroscopy. The crystal field splitting and the spin orbit splitting were obtained to be 0.2360 and 0.1119 eV, respectively. Also, the temperature dependence of the band gap energy of the $CdIn_2Te_4$ crystal has been driven as the following equation of $E_g(T)\;=E_g(0)\;-\;(9.43\;{\times}\;10^{-3})T^2/(2676\;+\;T)$. In this equation, the Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band state A, B, and C, respectively. The band gap energy of the p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.