• Rapid Communication in Photoscience
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• v.4 no.1
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• pp.25-28
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• 2015

The time-resolved photoexcitation dynamics of electrical conductivity of the magnetic organic superconductor ${\lambda}-(BETS)_2Fe_{0.45}Ga_{0.55}Cl_4$ has been studied with a nanosecond visible laser pulse at its three different phases, i. e., metallic phase, superconducting phase and insulating phase. A transient increase of the resistance is induced by photoirradiation at all the temperatures measured for all three phases, but the decay profile shows a significant temperature dependence. The relaxation rate in the metallic and insulating phase are different from each other, and the decay time is relatively faster and almost constant in the metallic phase. However, a prolongation of the relaxation time is observed at temperature just around the narrow superconducting phase. Nonbolometric (nonthermal) origin of the observed photoresponse of the electrical conductivity is confirmed in the superconducting phase.

• Ceramist
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• v.22 no.4
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• pp.332-349
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• 2019

Ceramic thin films are key materials for fundamental electronic devices such as transistors and capacitors which are highly important for the state-of-the-art electronic products. Their characteristic dielectric properties enable accurate control of current conduction through channel of transistors and stored charges in capacitor electrodes. The electronic conduction in ceramic thin films is one of the most important part to understand the electrical properties of electronic device based on ceramic thin films. There have been numerous papers dealing with the electronic conduction mechanisms in emerging ceramic thin films for future electronic devices, but these studies have been rarely reviewed. Another interesting electrical characterization technique is one based on electrical pulses and following transient responses, which can be used to examine physical and chemical changes in ceramic thin films. In this review, studies on various conduction mechanisms through ceramic thin films and electrical characterization based on electric pulses are comprehensively reviewed.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3272-3278
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• 2010

Synthesis and structural characterization of peripherally ferrocene-substituted zinc phthalocyanine (ZnPc-Fc) were carried out for efficient far-red/near-IR performance in dye-sensitized nanostructured $TiO_2$ solar cells. Incorporating ferrocene into phthalocyanine strongly improved the dye solubility in polar organic solvents, and reduced surface aggregation due to the steric effect of bulky ferrocene substituents. The involvement of electron transfer reaction pathways between ferrocene and phthalocyanine in ZnPc-Fc was evidenced by completely quenched fluorescence from S1 state (< 0.08% vs ZnPc). Strong absorption bands at 542 and 682 nm were observed in the transient absorption spectroscopy of ZnPc-Fc in DMSO, which was excited at a 670 nm laser pulse with a 15 ps full width at half maximum. Also, the excited state absorption signals at 450 - 600 and 750 - 850 nm appeared from the formation of charge separated state of phthalocyanine's anion. The lifetime of the charge separate state in ZnPc-Fc was determined to be $170{\pm}8$ ps, which was almost 17 times shorter than that of the ZnPc.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.12
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• pp.1886-1891
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• 2012

In this paper, the analytical models for the electrothermal feedback of a ${\mu}$-bolometer focal plane array(FPA) are proposed and applied to the conceptually designed FPA to investigate the electrothermal feedback effect on bolometer FPA signal. The temperature and resistance change of the ${\mu}$-bolometer by the electrothermal feedback(ETF) model are increased upto 20 and 35.7 % of those of no feedback case, respectively, while those by the effective thermal conductance(ETC) model increased 8.5 and 15.1 %. The integration current and output voltage of a CTIA used as an column amplifier of FPA are also increased upto 41.6 and 32.4 % by the ETF model, while increased upto 17.2 and 13.5 % by the ETC model. The proposed models give more accurate temperature change, accordingly larger signal than no feedback considering case. Electrothermal feedback effect should be considered to design a high performance and high density ${\mu}$-bolometer FPA. The proposed models are very useful to investigate the transient thermal analysis, also considered to be useful to predict the responsivity and dynamic range of ${\mu}$-bolometer FPAs.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.3
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• pp.540-544
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• 2017

In this study, we analyzed the effects of TID(Total Ionizing Dese) and TREE(Transient Radiation Effects on Electronics) on nMOSFET and pMOSFET fabricated by 0.18um CMOS process. The size of nMOSFET and pMOSFET is 100um/1um(W/L). The TID test was conducted up to 1 Mrad(Si) with a gamma-ray(Co-60). During the TID test, the nMOSFET generated leakage current proportional to the applied dose, but that of the pMOSFET was remained in a steady state. The TREE test was conducted at TEST LINAC in Pohang Accelerator Laboratory with a maximum dose-rate of $3.16{\times}10^8rad(si)/s$. In that test nMOESFET generated a large amount of photocurrent at a maximum of $3.16{\times}10^8rad(si)/s$. Whereas, pMOSFETs showed high TREE immunity with a little amount of photocurrent at the same dose rate. Based on the results of this experiment, we will progress the research of the radiation hardening for CMOS unit devices.

• The Korean Journal of Pain
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• v.6 no.1
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• pp.109-116
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• 1993

In March of l992, We performed two intentional total spinal blocks for the relief of pain. This was for 2 cases of post-traumatic cervical syndrome whose various symptoms were chronically unresponsive to the usual conservative treatments. We regularly checked the blood pressure, pulse rate, oxygen saturation and observed clinically the changes of respiration, consciousness, lid and light reflexes during the total spinal block. Pain relief was evaluated by using the Visual Analog Scale which is designed to measure the subjective intensity of pain. The results were as follows; 1) The effectiveness of total spinal block was 60% in case 1, 40% in case 2. 2) We observed two complications from the procedure. Firstly during the block, these were transient periods of hypotension. Following the block, accidental procedures related direct neural trauma resulted in anterior chest wall pain. In conclusion we believe that total spinal block is a satisfactory and reliable method for the treatment of post-traumatic cervical syndrome.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.30 no.1
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• pp.1-7
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• 2016

With a collimated $CO_2$ laser beam, the bidirectional current switching was realized in a two-terminal electronic device based on a highly resistive vanadium dioxide($VO_2$) thin film. A $VO_2$ thin film was grown on a $Al_2O_3$ substrate by a pulsed laser deposition method. For the fabrication of a two-terminal electronic device, the $VO_2$ thin film was etched by an ion beam-assisted milling method, and the $VO_2$ device, of which $VO_2$ patch width and electrode separation were 50 and $100{\mu}m$, respectively, was fabricated through a photolithographic method. A bias voltage range for stable bidirectional current switching was found by using the current-voltage property of the device measured in a current-controlled mode. The transient responses of bidirectionally switched currents were analyzed when the laser was modulated at a variety of pulse widths and repetition rates. A switching contrast was measured as ~3333, and rising and falling times were measured as ~39 and ~21ms, respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.11
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• pp.28-34
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• 2015

By incorporating a 966nm near infrared laser, we demonstrated bidirectional current triggering of between 0 and 10mA in a two-terminal planar device based on a highly resistive vanadium dioxide ($VO_2$) thin film grown by a pulsed laser deposition method. A two-terminal planar device, which had an electrode separation of $100{\mu}m$ and a $50{\mu}m-wide$ $VO_2$ conducting layer, was fabricated through ion beam-assisted milling and photolithographic techniques. A bias voltage range for stable bidirectional current triggering was determined by investigating the current-voltage curves of the $VO_2-based$ device in a current-controlled mode. Bidirectional current triggering of up to 10mA was realized by directly illuminating the $VO_2$ film with a focused infrared laser beam, and the transient responses of triggered currents were analyzed when the laser was modulated at various pulse widths and repetition rates. A switching contrast between off- and on-state currents was evaluated as ~3571, and the rising and falling times were measured as ~40 and ~20ms, respectively.

• Nuclear Engineering and Technology
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• v.50 no.5
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• pp.690-697
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• 2018

Criticality alarm systems (CASs) are mandatory in nuclear plants for prompt alarm in the event of any criticality incident. False criticality alarms are not desirable as they create a panic environment for radiation workers. The present article describes the design enhancement of the CAS at each stage and provides maximum availability, preventing false criticality alarms. The failure mode and effect analysis are carried out on each element of a CAS. Based on the analysis, additional hardware circuits are developed for early fault detection. Two different methods are developed, one method for channel loop functionality test and another method for dose alarm test using electronic transient pulse. The design enhancement made for the external systems that are integrated with a CAS includes the power supply, criticality evacuation hooter circuit, radiation data acquisition system along with selection of different soft alarm set points, and centralized electronic test facility. The CAS incorporating all improvements are assembled, installed, tested, and validated along with rigorous surveillance procedures in a nuclear plant for a period of 18,000 h.