• Structural Engineering and Mechanics
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• v.78 no.5
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• pp.585-597
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• 2021

This paper presents a comparative study of analytical method, finite element method (FEM) and Multilayer Perceptron (MLP) for analysis of a contact problem. The problem consists of a functionally graded (FG) layer resting on a half plane and pressed with distributed load from the top. Firstly, analytical solution of the problem is obtained by using theory of elasticity and integral transform techniques. The problem is reduced a system of integral equation in which the contact pressure are unknown functions. The numerical solution of the integral equation was carried out with Gauss-Jacobi integration formulation. Secondly, finite element model of the problem is constituted using ANSYS software and the two-dimensional analysis of the problem is carried out. The results show that contact areas and the contact stresses obtained from FEM provide boundary conditions of the problem as well as analytical results. Thirdly, the contact problem has been extended based on the MLP. The MLP with three-layer was used to calculate the contact distances. Material properties and loading states were created by giving examples of different values were used at the training and test stages of MLP. Program code was rewritten in C++. As a result, average deviation values such as 0.375 and 1.465 was obtained for FEM and MLP respectively. The contact areas and contact stresses obtained from FEM and MLP are very close to results obtained from analytical method. Finally, this study provides evidence that there is a good agreement between three methods and the stiffness parameters has an important effect on the contact stresses and contact areas.

• Proceedings of the Korean Society of Surveying, Geodesy, Photogrammetry, and Cartography Conference
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• 2004.04a
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• pp.291-298
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• 2004

Effective 3 dimensional modelling is to be essential work for design of construction, mechanic and industrial part. Especially, it makes possible for reverse design. It need rapidity, accuracy, reality. Data acquisition method for modelling are contact 3dimensional measurement system, LASER scanner, Pattern scanner, and digital photogrammetry. This study introduce to 3 dimensional modelling methods and analysis of these method. We tried to 3D modelling of automobile part using OPTO-Top pattern scanner which system have rapidity and accuracy, and compared effectiveness of each method. The 3D display web environment was made.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.1
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• pp.162-168
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• 2008

In this paper, we analyzed the heat transfer phenomenon and the reset current variation of PRAM device with thickness of phase change material using the 3-D finite element analysis tool. From the simulation, Joule's heat was generated at the contact surface of phase change material and bottom electrode of PRAM. As the thickness of phase change material was decreased, the reset current was highly increased. In case thickness of phase change material thin film was $200\;{\AA}$, heat increased through top electrode and reset current caused by phase transition highly increased. And as thermal conductivity of top electrode decreased, temperature of unit memory cell was increased.

• Transactions of the Korean Society of Automotive Engineers
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• v.3 no.2
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• pp.77-85
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• 1995

Among mechanical friction losses in an engine, the piston assembly and cylinder components accounts for the majority of the losses. The movable bore technique has been developed and turned out to be the most reliable technique in measuring the instantaneous friction of piston assembly. The weakness of this system, however, was the presence of the protruded top of movable bore necessary for pressure balancing. Because of the protruded part the piston could not be taken out without disassembling the crankshaft. Present study was carried out with a system of removable top of the movable bore so that it was possible to make frequent piston removals. The effects from engine speed, oil viscosity, engine load and elastic contact pressure of piston rings on the frictional characteristics have been evaluated with the improved equipment. Also, frictions of each member of piston assembly were measured.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.395-395
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• 2013

GaN는 LED, 태양전지, 그리고 전자소자 등에 쓰이는 물질로, 관련 연구가 활발히 진행되고 있으며, 이와 더불어 top-down방식을 활용한 소자제작 방법 또한 발달되고 있다. 하지만, 일반적으로 LED 제작에 사용되는 c-plane GaN의 경우, c축 방향으로 발생하는 분극의 영향을 받게되며, 분극은 LED내 양자우물의 밴드를 기울게 하여 전자와 홀의 재결합률을 감소시켜 낮은 내부양자효율을 야기한다. 이러한 문제를 해결하기 위해 여러 가지 방법들이 제시되었으며, 그 중에서도 a면, 혹은 m면과 같은 nonpolar면을 사용하는 GaN LED가 주목받고 있다. 본 연구에서는, top-down방식을 통해 약 $2{\mu}m$ 크기의 diameter를 갖는 micro-sized column LED를 구현하였으며, 식각 후 드러나는 semipolar면을 wet treatment를 통해 제거하여 nonpolar면을 드러나게 하였으며, 이 면에 Ni/Au를 contact하여, 전기적, 광학적 특성을 논하였다. Fig. 1은 I-V 특성 그래프이며, Fig. 2는 EL측정 결과(광학적 특성)이다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.92-97
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900 ^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^2$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.212-212
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• 2013

We fabricate and characterize top gate Graphene transistor using aluminum oxide as a gate insulator by atomic layer deposition (ALD). It is found that due to absence of functional group and dangling bonds, ALD of metal oxide is difficult on Graphene. Here we used 4-mercaptopheneol as a functionalization layer on Graphene to facilitate uniform oxide coverage. Contact angle measurement and Atomic force microscopy were used to confirm uniform oxide coverage on Graphene. Raman spectroscopy revealed that functionalization with 4-mercaptopheneol does not induce any defect peak on Graphene. Our device shows mobility values of 4,000 $cm^2/Vs$ at room temperature which also suggest top gate stack does not significantly increase scattering. The noncovalent functionalization method is non-destructive and can be used to grow ultra-thin dielectric for future Graphene applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.33-33
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• 2000

일반적으로 GaN-based light emitting diodes(LEDs)는 Top layer위에 금속박막으로 contact을 형성하고 있으며 광소자 구성에 있어 빛은 이러한 금속 contact을 통과할 수 없다. 그러나 만약 이러한 contact이 투명전도막으로 구성될 수 있다면 보다 효율적인 광소자의 구성이 기대되어진다. 특히 GaN photodetector, GaN-based LEDs, GaN vertical cavity surface emitting lasers(VCSELs)등의 소자형성에 있어 투명전도막 contact은 매우 중요하며 그 응용에 앞서 기본적인 구조적, 전기적, 광학적 특성에 대한 연구가 반드시 선행되어져야 한다. 따라서 본 실험에서는 이러한 투명전도막으로써 Indium Tin Oxide(ITO)를 사용하였으며 박막형태의 contact으로 제조하여 n-GaN, p-GaN와 corning glass위에 e-beam evaporation법로써 제조하였다. 또한 각 n-, p-type과 corning glass위에 증착된 ITO박막의 구조적 특성을 분석하기 위하여 x-ray diffractometry(XRD)와 Auger electron spectroscopy(AES)등을 사용하였으며 전기적 특성을 측정하기 위하여 four point probe를 사용하였고 그들의 I-V 곡선을 측정하였다. 또한 UV spectrometry를 사용하여 그들의 광학적 특성을 측정하고자 하였다. ITO 박막의 제조에 있어 기판은 초음파 유기세정 후 HCl과 H2O2(1:1)의 혼합용액을 사용하여 GaO2를 제거하고자 하였으며 이후 초순수로 세척하여 사용하였다. 초기 진공도는 3$\times$10-5 Torr이하였으며 기판온도 50$0^{\circ}C$에서 0.6 /s의 증착속도로 약 2000 증착하였다. 이렇게 제조된 ITO 박막은 5$\times$10-5 Torr이하의 진공분위기에서 $600^{\circ}C$로 열처리를 실시하였으며 열처리 시간의 변화에 따른 그들의 전기적, 구조적, 광학적 특성을 측정하였다. 열처리 과정을 통한 ITO박막은 투과도는 420nm의 영역에서 80%이상을 나타내었으며 이때의 면저항은 약 50ohm/ 이었다. 또한 I-V 곡선 측정에 의한 contact특성의 측정결과 열처리 전의 ITO contact은 n-GaN와 n-GaN에 대해 각각 ohmic과 schottky contact의 일반적인 contact 특성을 나타내었다. 그러나 이러한 contact 특성은 열처리 시간의 변화에 따라 변화하는 것을 확인할 수 있었다.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1991.06a
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• pp.1-30
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• 1991

The lubrication state between contacting bodies with rolling and sliding under loaded condition is generally understood by the conception shown in Figure 1. When the lubricating oil film formation between facing bodies is good enough to separate these bodies by the hydrodynamic pressure, this state is called by the expression of "hydrodynamic lubrication". The thickness of oil film is so large that the lubricating oil between facing bodies behaves as fluid and metal-to-metal contact between surface roughness asperities on facing bodies does not occur. When the oil film thickness becomes thinner or when the surface roughness height becomes larger, top of surface roughness asperities on facing bodies reaches very near to each other and there the oil or absorbed oil molecules on the surface of facing bodies behave no more as fluid. Partly metal-to-metal contact of surface roughness asperities occurs. Such lubrication state is called by the expression "mixed-lubrication". When the oil film thickness becomes more thinner or surface roughness height becomes larger, metal-tometal contact or contact via absorbed oil molecules dominate at most of the part in contact zone. Such state is called by the expression "boundary lubrication". Schematic representation of these three regimes of lubrication is shown in Figure 1.rication is shown in Figure 1.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1001-1007
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• 2002

In this paper we analyzed the effects of pentacene thickness and the location of source/drain contacts on the performance of pentacene TFT Above a certain thickness of pentacene thin film the pentacene grain was turned from the thin film phase into the bulk phase, resulting in degrading the crystallinity and then performance as well. For the top contact structure in which source/drain contacts are located above pentacene film, the contact resistance decreased comparing with the bottom contact structure. However, the leakage current in the off-state became large and then the related parameters such as on/off current ratio were deteriorated. We found that the thickness of around 300$\AA$-700$\AA$ was suitable, and that the bottom contact was more feasible for hig Performance pentacene OTFT.