• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.904-906
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• 2009

Organic field-effect transistor (OFET) memory is an emerging device for its potential to realize light-weight, low cost flexible charge storage media. Here we report on a solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating-gate memory (NFGM) with top-gate/bottom-contact device configuration. A reversible shift in the threshold voltage ($V_{Th}$) and the reliable memory characteristics were achieved by incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative electrons at the interface between polystyrene and cross-linked poly(4-vinylphenol).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.352-355
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• 2007

We have developed tight bonding of plastic LCD with new rigid spacer. For tight bonding of two plastic substrates, we designed structures to collect UV or thermal epoxy placed on the top of rigid spacer spontaneously by capillary effect. We confirmed that tight bonded plastic LCD has a good adhesion without induced defects and a high mechanical stability against the various external deformations. This method can be applicable to the fabrication of large plastic LCDs using stamping process.

• 한국재료학회지
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• 제3권2호
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• pp.193-196
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• 1993

A procedure for preparing cross-sectional specimens for transmission electron microscopy(TEM)by focused ion beam(FIB)milling of specific regions of semiconductor devices is outlined. This technique enables TEM specimens to be pripared at precisely preselected area. In-situ #W thin film deposition on the top surface of desired site is complementally used to secure the TEM specimens to be less wedge shaped, which is main shortcoming of previous FIB-assisted TEM sample preparation technique. This technique is quite useful for the TEM sample priparation for fault finding and the characterization of fabrication process associated with submicron contact technologies.

• 한국전기전자재료학회논문지
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• 제19권6호
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• pp.558-562
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• 2006

We have synthesized a new p-type polymer, poly(9,9'-n-dioctylfluorene-alt-phenoxazine) (PFPO), via the palladium catalyzed coupling reaction. The number average molecular weight ($M_n$) of PFPO was found to be 23,000. PFPO dissolves in common organic solvents such as chloroform and toluene. The UV-visible absorption maximum of the PFPO thin film is clearly blue-shifted with respect to that of F8T2, poly-(9,9'-n-dioctylfluorene-alt-bithiophene). The introduction of the phenoxazine moiety into the polymer system results in better field-effect transistor (FET) performance than that of F8T2. A solution processed PFPO TFT device with a top contact geometry was found to exhibit a hole mobility of $2.7{\times}10^{-4}cm^2/Vs$ and a low threshold voltage of -2 V with high on/off ratio(${\sim}10^4$).

• Transactions on Electrical and Electronic Materials
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• 제12권1호
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• pp.40-42
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• 2011

An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100 ${\mu}m$ 3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.202-205
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• 1997

We investigated grain boundary effect for terrestrial applications of solar cell\ulcorner with low cost, large area, and high efficiency. Grain boundaries are known as potential barriers and recombination centers for the photo-generated charge carriers, which make it difficult to achieve a high efficiency cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatments, various grid patterns, selective wet etchings for grain boundaries, buried contact metallizations along grain boundaries, and use of metallic thin films. From the various grid patterns we learned that the series resistance of solar cell reduced open circuit voltage and consequently decreased the cell efficiency. This paper describes the effect of various grid patterns and the employment of metallic thin films for a top electrode.

• 한국분말재료학회지
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• 제11권3호
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• pp.233-241
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• 2004

In this study, bottom-up type powder processing and top-down type SPD (severe plastic deformation) approaches were combined in order to achieve both full density and grain refinement of Al-20 wt% Si powders without grain growth, which was considered as a bottle neck of the bottom-up method using the conventional powder metallurgy of compaction and sintering. ECAP (Equal channel angular pressing), one of the most promising method in SPD, was used for the powder consolidation. The powder ECAP processing with 1, 2, 4 and 8 passes was conducted for 10$0^{\circ}C$ and 20$0^{\circ}C$ It was found by microhardness, compression tests and micro-structure characterization that high mechanical strength could be achieved effectively as a result of the well bonded powder contact surface during ECAP process. The SPD processing of powders is a viable method to achieve both fully density and nanostructured materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.494-495
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.488-489
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different substrate temperature. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2021년도 가을 학술논문 발표대회
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• pp.198-199
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• 2021

After the outbreak of COVID-19, the construction industry, which has more contact between workers than other industries, needs to improve its environment through the technology development for automation of construction projects. This study conducted 5-point scale surveys of 39 candidate technologies on 54 workers in construction- related industries to derive priorities for technology development to improve the construction environment. The result of this survey shows the top 10 candidate technology priorities, and this analysis can be used as basic data for setting the direction for future construction development.