• Vacuum Magazine
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• v.1 no.2
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• pp.19-23
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• 2014

Transparent and top emission organic light-emitting device (OLEDs) are the important issues in realizing new display applications such as see-through electronic displays, and flexible displays. The cathode of the transparent and top emission OLEDs should be transparent in the visible light and should not give any damage to the underlying organic layers, in addition to its intrinsic role of injecting electrons into the organic layers. Several authors have investigated the transparent conducting oxide films prepared by sputtering methods. They have introduced the sophisticated sputtering process for reducing the damages. Other groups have developed thermally evaporated transparent cathodes which are believed to be damage free without causing any permanent defect to the organic layers. This review focuses on the vacuum evaporated damage free transparent cathodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.457-458
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• 2006

Transparent metal cathodes using Ca/Ag, Ba/Ag double layers have been fabricated to investigate its optical transmission. The transmission spectra show that Ca/Ag and Ba/Ag double layers result in higher transmittance compared to Ag single layer. The Ba/Ag double layer shows over 80% transmittance at 400 nm and 70% at 700 nm. The electroluminescence efficiency of fluorescent TEOLED using Ba/Ag transparent metal cathode was 10 ~ 15 cd/A.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.955-962
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• 2005

Power efficiency, lifetime and stable manufacturing processes are the crucial parameters for the success of organic light emitting diodes (OLEDs) in display and lighting applications. Highest power efficiencies of PIN-OLEDs for all principal colours and for bottom and top emission OLED structures have been demonstrated. The PIN structure, which means the incorporation of intentionally doped charge carrier transport layer in a suitable OLED layer setup, lowers the operating voltage to achieve highest power efficiencies. Up to now the n-doping of the electron transport layer has been done by alkali metal co-deposition. This has main draw-backs in terms of manufacturability, since the handling of large amounts of pure Cs is a basic issue in production lines. Here we present in detail results on PIN-OLEDs comprising a newly developed molecular n-dopant. All the previous OLED performance data based on PIN-OLEDs with alkali metal doping could be reproduced and will be further improved in the future. Hence, for the first time, a full manufacturing compatible PIN-OLED is available.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.380-380
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• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.328-332
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• 2012

The work function of Ag (silver) is too low (~4.3 eV) to be used as an electrode of T-OLED (Top Emission Organic Light Emitting Diode). To solve this weakness, researches used plasma-, UV-, or thermal treatment on Ag films in order to increase the work function (~5.0 eV). So, most of studies have focused only on the work function of various treated Ag films, but studies focusing on nanomechanical properties were very important to investigate the efficiency and life time of T-OLED etc. In this paper, we focused on the mechanical properties of the Ag and $AgO_x$ film. The Ag was deposited on a glass substrate with the thickness of 150 nm by using rf-magnetron sputter with the power was fixed at 100 W and working pressure was 3 mTorr. The deposited Ag film was UV treated by UV lamp for several minutes (0~9 min). We measured the sheet resistance and mechanical property of the deposited film. From the experimental result, there were some differences of the sheet resistance and surface hardness of Ag thin film between short time (0~3 min) and long time UV treatment. These result presumed that the induced stress was taken place by the surface oxidation after UV treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.345-346
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• 2008

We have studied an emission spectra of top-emssion organic light-emitting diodes(TEOLED) due to a change of cathode and organic layer thickness. Device structure is Al(100nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/cathode. And two different types of cathode were used; one is LiF(0.5nm)/Al(25nm) and the other is LiF(0.5nm)/Al(2nm)/Ag(30nm). While a thickness of hole-transport layer of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm for two devices. A ratio of those two layer was kept to be about 2:3. Al and Al/Ag double layer cathode devices show that the emission spectra were changed from 490nm to 560nm and from 490nm to 560nm, respectively, when the total organic layer increase. Full width at half maximum was changed from 67nm to 49nm and from 90nm to 35nm as the organic layer thickness increases. All devices show that view angle dependent emission spectra show a blue shift. Blue shift is strong when the organic layer thickness is more than 140nm. Devece with Al/Ag double layer cathode is more vivid.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1591-1594
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• 2006

In this work, we fabricated efficient white organic light emitting device (WOLED) by the stack of complementary fluorescent dye-doped layers, Effect of dye-doping ratio and thickness of each layers on WOLED efficiency and emission spectrum was investigated. Moreover, out-coupling efficiency enhancement using microlens array was analyzed for bottom and top-emitting device architecture, leading to higher light extraction properties.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.343-347
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• 2004

As a first demonstration of proven stability for a-Si, over 7000h of stability data for a high drive current a-Si AMOLED pixel driver circuit was presented at SID 2004. Also demonstrated was an AMOLED display operating at 6V using the IGNIS 4-T pixel driver circuit [1] and based on a top-emission reverse OLED architecture. In this paper, an update to that information is presented with test data that is representative of lifetime in excess of 25,000 hours taking into account pertinent acceleration factors, extracted from high current drive and high temperature stressing conditions. Lifetimes will continue to increase, given the high and ever-increasing OLED efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.298-299
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• 2006

본 연구에서는 전면 발광 OLED용 투명 금속 전극 소자의 제조를 위해 Al과 Ag 재료를 가지고 박막의 두께에 따른 투과도와 면저항을 조사하였다. Al 금속 재료의 박막 두께가 30nm에 따른 면저항값은 $8{\Omega}/{\square}$로 조사되었고, 70% 이상의 투과도를 가진 금속의 두께는 10nm 이상으로 조사되었다. Ag 금속 재료의 최적의 두께 25nm에 따른 면 저항값는 $4.5{\Omega}/{\square}$로 조사되었고, 70% 이상의 투과도를 가진 Ag 금속의 두께는 5nm 이하로 조사되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.123-126
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• 2008

We report the improved AMOLED with a-Si TFT backplane based on our unique structure. Our new structure is called Dual-plate OLED Display (DOD). It can also achieve not only higher uniformity of luminance in large-sized display due to low electrical resistance of common electrode but also wider viewing angle.