• 제목/요약/키워드: top emission OLED

검색결과 70건 처리시간 0.03초

High Performance Active Matrix TOLED

  • Wood, Richard;Cheuk, Roger;Kim, Woo-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.117-118
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    • 2006
  • Top Emission Active Matrix OLED is of particular interest to high performance display consumers. OLEDs offers excellent viewing angle, contrast, and color gambit. The present work centers on the development of a crystalline silicon active matrix OLED for high performance applications.

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Top Emission OLED를 위한 ITO 박막 특성에 대한 연구 (A Study on the Characteristics of ITO Thin Film for Top Emission OLED)

  • 김동섭;신상훈;조민주;최동훈;김태근
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.450-450
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    • 2006
  • Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).

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Highly efficient, long living white PIN-OLEDs for AM displays

  • Murano, Sven;Vehse, Martin;He, Gufeng;Birnstock, Jan;Hofmann, Michael
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.239-244
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    • 2007
  • Highly efficient and stable white PIN OLED structures have been developed with a focus on possible AM display applications. Due to the use of the novel air-stable Novaled n-dopant material NDN26, the mass production compatibility of the PIN approach is improved. With both a conventional n-dopant, NDN1, and a novel air-stable n-dopant, NDN26, similar performance in efficiency and lifetime are reached. Based on highly a stable red fluorescent emitter system, the Novaled PIN approach allows for reaching ultra-long lifetimes of 1,000,000 hours at a brightness of $1,000\;cd/m^2$, both for top and for bottom emission layouts. Furthermore, inverted PIN structures for a possible use in a-Si backplane applications for AM displays are shown. With a phosphorescent green emitter system it could be demonstrated that for bottom and inverted as well as non-inverted top emission, a brightness of $1,000\;cd/m^2$ can be reached at below 3 V. In addition to low operating voltages and long lifetimes, PIN OLEDs also enable for device structures with extremely low operating voltage drifts, a feature of increasing importance for future AM display developments.

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High performance top-emitting OLEDs with copper iodide-doped hole injection layer

  • Lee, Jae-Hyun;Leem, Dong-Seok;Kim, Jang-Joo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.492-495
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    • 2008
  • Efficient top-emitting organic light-emitting diodes were fabricated using copper iodide (CuI) doped NPB as a p-doped hole injection layer to improve hole injection from a silver bottom electrode. The enhanced hole injection is originated from the formation of the charge transfer complex between CuI and NPB. The devices result in high efficiency of 69 cd/A with almost Lambertian emission pattern.

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이중 음극층을 이용한 고휘도 전면발광(Top emission) 유기EL소자의 특성평가 (Characterization of the High Luminance Top Emission Organic Light-emitting Devices (TEOLEDs) Using Dual Cathode Layer)

  • 강윤호;이수환;신동원;김성준;김달호;이곤섭;박재근
    • 반도체디스플레이기술학회지
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    • 제5권3호
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    • pp.23-27
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    • 2006
  • Recently, Top emission organic light-emitting diode (TEOLED) has been attracted by their potential application for the development of flat panel display (FPD). We have fabricated the high luminance top emission organic-emitting diode (TEOLED) using dual cathode layer and three top emitting structure. These devices were characterized by electroluminescence (EL) and current density-voltage (J-V) measurements. After compared it with Au anode structure, luminance of the device using dual anode was better than using without Al device. Consequently, Al layers are very good candidates for a promising electron-injecting buffer layer for top emission light-emitting diode (TEOLED).

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Performance and Applications of High Efficiency Phosphorescent OLED Technology

  • Hack, M.;Lu, M.K.;Kwong, R.;Weaver, M.S.;Tung, Y.J.;Chwang, A.;Brown, J.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.169-173
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    • 2003
  • Universal Display Corporation (UDC), together with its University partners at Princeton University and the University of Southern California, are developing high-efficiency electrophosphorescent OLED devices, based on triplet emission. Recent results show both excellent device efficiencies and good lifetimes for the commercialization of low power consumption, full-color, passive and activematrix OLED displays. We also show that phosphorescent devices may be driven by low cost amorphous silicon backplanes, and discuss the benefits of using our proprietary top emission OLED device architecture.

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High reflective anode for top emission OLED

  • Pang, Hee-Suk;Han, Chang-Wook;Kim, Ki-Yong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.820-823
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    • 2004
  • We present high reflective anode for top emission OLED. Anode consists of two layers, which are increasing the ability of hole injection and the reflectivity of emitted light. Thin Cr is deposited on AlNd that has a high thermal resistance and reflectivity. The current-voltage characteristics of Cr(30${{\AA}}$)/AlNd(1000${{\AA}}$) anode are poor but these of Cr(50${{\AA}}$)/AlNd(1000${{\AA}}$) anode are superior to these of Cr(30${{\AA}}$)/AlNd(1000${{\AA}}$) and the work function of cr(50${{\AA}}$)/AlNd(1000${{\AA}}$) is higher that of Cr(30${{\AA}}$)/AlNd(1000${{\AA}}$).

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HDP-CVD를 이용한 OLED용 수분침투 방지막에 대한 연구 (Thin film permeation barrier for OLED using HDP-CVD)

  • 김창조;신백균;최윤;이붕주;김병수;이병수;최창락
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1398-1399
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    • 2006
  • 현재 상용화된 OLED 소자는 최대 단점인 수분 취약성의 원인으로 top emission과 flexible 타입으로 제조되는데 장애가 되고 있다. 따라서 top emission 방식과 flexible한 소자를 실현하기 위해 수분 및 산소 침투를 방지하기 위한 유전체 막의 실험이 진행되고 있는데, 본 실험에서는 기존의 PECVD보다 plasma의 density가 높은 HDP(High Density Plasma)-CVD를 사용해 SiOx 및 SiNx 유전체 film을 증착하였고 MOCON 테스트를 통한 수분침투 방지막으로써의 가능성을 검증하였다.

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A 2' QCIF Flexible OTFT driven AM-OLED Display

  • Suh, Kyung-Soo;You, In-Kyu;Kang, Seung-Youl;Ahn, Seong-Deok;Oh, Ji-Young;Kim, Gi-Hyun;Baek, Kyu-Ha;Kim, Chul-Am;Hwang, Chi-Sun;KoPark, Sang-Hee;Yang, Yong-Suk;Chung, Sung-Mook;Lee, Jeong-Ik;Do, Lee-Mi;Chu, Hye-Yong;Kang, Kwang-Yong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.181-185
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    • 2006
  • The flexible 2-inch AMOLED with $176{\times}144$ pixels has been demonstrated using top emission OLED driven by organic thin film transistors (OTFTs). For the development of AMOLED display on plastic substrate, we have developed several integration and unit process technologies. Through the optimization of the process based on plastic substrate, OTFT backplane with 2 transistors and 1 capacitor in a pixel has been fabricated and integrated with top emission OLED. The active addressing by OTFT driving circuit has been achieved and green light with 15 $cd/m^2$ at 15V has been observed.

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